Abstract: Various kinds of metal elements existing on the surface of a wafer are analyzed with higher sensitivity. A high concentration HF solution is dropped onto a surface of a wafer. By providing the droplets of high concentration HF solution, the native oxide film on the surface of the wafer is dissolved into the solution, and the metal elements or compounds thereof existing in vicinity of the surface of the wafer are eliminated from the wafer and are incorporated into the high concentration HF solution. The droplets formed by agglomerating the high concentration HF solution are aggregated at a predetermined position on the surface of the wafer. Then, the recovered droplet of the high concentration HF solution is dried. The aggregated material is irradiated with X-ray at an angle for promoting total reflection, and the total reflection X-ray fluorescence spectrometry is conducted to detect the emitted X-ray.

Abstract: A method of converting code, which converts first codes based on a first system to second codes based on a second system, is characterized in that, when the first codes are unavailable, the second codes are obtained by directly using speech parameters which are ever decoded in accordance with the first system and are stored.

Abstract: Various kinds of metal elements existing on the surface of a wafer are analyzed with higher sensitivity. A high concentration HF solution is dropped onto a surface of a wafer. By providing the droplets of high concentration HF solution, the native oxide film on the surface of the wafer is dissolved into the solution, and the metal elements or compounds thereof existing in vicinity of the surface of the wafer are eliminated from the wafer and are incorporated into the high concentration HF solution. The droplets formed by agglomerating the high concentration HF solution are aggregated at a predetermined position on the surface of the wafer. Then, the recovered droplet of the high concentration HF solution is dried. The aggregated material is irradiated with X-ray at an angle for promoting total reflection, and the total reflection X-ray fluorescence spectrometry is conducted to detect the emitted X-ray.

Abstract: An apparatus for preparing an analytical sample of a substance, which resides on the surface of a semiconductor substrate, capable of readily preparing an analytical sample of a substance which resides on the surface of a semiconductor substrate. A recovery solution is dropped on the surface of a silicon wafer. The recovery liquid can spread over the entire surface of the silicon wafer, because the surface property of the silicon wafer having an oxide film formed thereon is hydrophilic. The substance-to-be-analyzed which resides on the surface of the silicon wafer dissolves into the recovery liquid. Next, a hydrofluoric acid vapor is sprayed onto the surface of the silicon wafer. The oxide film is decomposed by the hydrofluoric acid vapor, and this turns the surface property of the silicon wafer into hydrophobic. Upon decomposition of the oxide film, the substance-to-be-analyzed dissolves into the recovery liquid. The hydrophobicity of the silicon wafer facilitates sampling of the recovery liquid.

Abstract: A cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film includes a device for irradiating the semiconductor substrate contaminated by the organic matters. The device emits a vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

Abstract: A retaining box of a semiconductor wafer, includes an air supply port and an exhaust port. The air supply port has a piping joint and a first filter. Air is forcedly supplied through the air supply port. The exhaust port has a second filter. Inner air inside the retaining box is exhausted from the exhaust port. The retaining box accommodates a plurality of semiconductor wafers in an interval between each other.

Abstract: It is an object of the present invention to provide a cleaning method of and a cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film. The present invention provides a method of cleaning a semiconductor substrate, which comprises irradiating a semiconductor substrate contaminated by organic matters such as phthalic acid, phthalate and derivatives thereof with vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

Abstract: In a manufacturing method of a semiconductor device including insulation oxide layers (gate oxide layers etc.), before a step for forming an insulation oxide layer on a semiconductor circuit board, the semiconductor circuit board is held in an atmosphere containing oxygen gas (N2 (99% (volume))+O2 (1% (volume)), for example) at temperature X (400° C.<X<750° C.) for a preset period. Preferably, the preset period for the holding step is set between 5 minutes and 10 minutes, and the concentration of the oxygen gas in the oxygen-containing atmosphere is set between 0.5% (volume) and 1.0% (volume). By the holding step at the temperature X (400° C.<X<750° C.), organic impurities (adipates etc.

Abstract: A semiconductor substrate is dipped into a contaminating treatment liquid whose pH value is controlled depending on the property of metal impurities, so as to produce a sample contaminated with metal of a desired concentration. Alternatively, a semiconductor substrate is kept in a hermetic container along with desired organic matter so as to produce a sample contaminated with the organic matter in the form of vapor obtained through vapor-liquid or vapor-solid equilibrium.

Abstract: It is an object of the present invention to provide a cleaning method of and a cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film. The present invention provides a method of cleaning a semiconductor substrate, which comprises irradiating a semiconductor substrate contaminated by organic matters such as phthalic acid, phthalate and derivatives thereof with vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

Abstract: A method of analyzing substances is provided, which improves the correctness in analysis of desired substances applying some bad effect to a semiconductor device. In the first step, a gas to be analyzed is contacted with an absorbent, thereby absorbing substances existing in the gas to the absorbent. The absorbent is made of a same material as that of a semiconductor material to be processed in the gas. In the second step, the absorbent is heated to thermally desorb the absorbed substances from the absorbent at a specific thermally desorbing temperature. In the third step, the desorbed substances are physically separated to be identified by using an analytical system. Preferably, the absorbent used in the first step is made of bits or particles of polycrystalline, single-crystal, or amorphous Si. The absorbent is preferably located in a hollow refractory tube and the gas is injected into the tube in the first step.

Abstract: A cleaning method for a semiconductor substrate is provided. After pure water is supplied to a cleaning tank, a chlorine gas is supplied to the pure water to thereby generate chloride ions, hypochlorite ions, chlorite ions, and chlorate ions in the pure water. Then, a semiconductor substrate is immersed into the pure water containing the chloride ions, hypochlorite ions, chlorite ions, and chlorate ions. The fabrication cost of a semiconductor device and adverse effects on the earth environment can be reduced. The concentration of the dissolved chlorine gas in the pure water is preferably in the range from 0.003 to 0.3% by weight.

Abstract: There is provided a method of, and an apparatus for obtaining electrolytically activated water having stable characteristics comprising steps of bringing a gas containing at least one of chlorine, hydrogen chloride, hydrogen bromide and hydrogen iodide into contact with a liquid in an anode cell of an electrolytic cell or a liquid supplied thereto and/or bringing ammonia into contact with a liquid in a cathode cell of the electrolytic cell, or a liquid supplied thereto to dissolve the gas to thereby electrolyze this liquid. The resulting electrolytically activated water is optimal as the wet treating solution adapted for semiconductor substrate.

Abstract: A method for removing metallic and organic contaminations from a surface of a semiconductor wafer comprises cleaning the semiconductor wafer with a cleaning solution which contains a chlorine compound acting as an oxidant and which has a pH value in the range of 1 to 3. The cleaning solution has an oxidation-reduction potential in the range of 800 mV to 1200 mV when measured on the basis of a saturated calomel electrode at a temperature 25.degree. C.

Abstract: The method for producing electrolyzed water includes the step of applying a voltage to electrodes disposed in an electrolytic cell containing therein pure water including electrolyte therein. A strength of an electric field generated by applying a voltage to the electrodes is controlled to be variable by means of various techniques. The method makes it possible to produce electrolyzed water with a smaller amount of energy than prior methods.

Abstract: The method for producing electrolyzed water includes the step of applying a voltage to electrodes disposed in an electrolytic cell containing therein pure water including electrolyte therein. A strength of an electric field generated by applying a voltage to the electrodes is controlled to be variable by means of various techniques. The method makes it possible to produce electrolyzed water with a smaller amount of energy than prior methods.

Abstract: In a wet processing apparatus, an electrolytic cell, a first storing cell for storing anode active water of the electrolytic cell, a first processing cell for processing a target with the anode active water of the first storing cell, a second storing cell for storing cathode active water of the electrolytic cell, and a second processing cell for processing a target with the cathode active water of the second storing cell are provided. Also, a first reactivating feedback path is provided between the first processing cell and an anode region of the electrolytic cell, and a second reactivating feedback path is provided between the second processing cell and a cathode region of the electrolytic cell.

Abstract: The method for producing electrolyzed water includes the step of applying a voltage to electrodes disposed in an electrolytic cell containing therein pure water including electrolyte therein. A strength of an electric field generated by applying a voltage to the electrodes is controlled to be variable by means of various techniques. The method makes it possible to produce electrolyzed water with a smaller amount of energy than prior methods.

Abstract: A method for analyzing organic substances, includes the steps of subcooling a semiconductor substrate to a temperature at least lower than an ambient temperature, trapping volatile organic substances present in an atmosphere on the semiconductor substrate, heating the semiconductor substrate to thereby remove the volatile organic substances from the semiconductor substrate, and analyzing the volatile organic substances. This method is capable of selectively trapping to analyze only organic substances which might be adsorbed to a semiconductor device and thereby deleteriously affect the performances of the semiconductor device.

Abstract: Cleaning methods for semiconductor substrates which can remove metallic impurities and natural oxide films from the surface of the substrate. As a cleaning solution, aqueous acid solution containing 0.0001-0.001 weight % of ammonia based on a conversion off the amount off ammonium hydroxide or 0.0005-0.01 weight % of EDTA is used. The cleaning solution preferably contains 1-10 weight % of hydrogen fluoride. Metallic impurities removed from the surface of the substrate into the cleaning solution form complexes or chelates with ammonia molecules or EDTA molecules, thereby masking the metallic impurities.