Abstract: Provided is a solid-state imaging device that allows high saturation and maximum transfer performance to be achieved. The solid-state imaging device includes a plurality of unit pixels arranged in a two-dimensional array. The plurality of unit pixels each includes a photoelectric conversion unit that photoelectrically converts incident light and a wiring layer stacked on a surface opposite to a light-incident side surface of the photoelectric conversion unit and having a detection node that detects charge stored at the photoelectric conversion unit. In at least some of the plurality of unit pixels, a center of the detection node is coincident with a light receiving center of the photoelectric conversion unit.

Abstract: In an ion concentration sensor, both an improvement of an SN ratio of output and high responsiveness are achieved. In an ion sensor (100), a sensing unit (1) accumulates as electron injected from an n-type substrate (21) via a p-well (22) as a signal charge. The p-well (22) is laminated on the n-type substrate (21). A concentration distribution of impurities exists in the p-well (22) located between the sensing unit (1) and the n-type substrate (21), and a maximum value C1 of an impurity concentration in the p-well (22) is 0<C1?3.0×1014 cm3.

Abstract: A light detecting device includes: an optical filter (2) that transmits a first wavelength light having a wavelength in a first wavelength range, a second wavelength light having a wavelength in a second wavelength range, . . . , and an n-th wavelength light having a wavelength in an n-th wavelength range (n is an integer); an optical sensor (3) that detects at least one of a first wavelength light intensity of the first wavelength light, a second wavelength light intensity of the second wavelength light, . . . , and an n-th wavelength light intensity of the n-th wavelength light; and an analysis unit (4) that estimates a light intensity of light having a wavelength in a wavelength range other than at least one of the first wavelength range, the second wavelength range, . . . , and the n-th wavelength range based on at least one of the first wavelength light intensity, the second wavelength light intensity, . . . , and the n-th wavelength light intensity.

Abstract: A light detecting device includes: an optical filter (2) that transmits a first wavelength light having a wavelength in a first wavelength range, a second wavelength light having a wavelength in a second wavelength range, . . . , and an n-th wavelength light having a wavelength in an n-th wavelength range (n is an integer); an optical sensor (3) that detects at least one of a first wavelength light intensity of the first wavelength light, a second wavelength light intensity of the second wavelength light, . . . , and an n-th wavelength light intensity of the n-th wavelength light; and an analysis unit (4) that estimates a light intensity of light having a wavelength in a wavelength range other than at least one of the first wavelength range, the second wavelength range, . . . , and the n-th wavelength range based on at least one of the first wavelength light intensity, the second wavelength light intensity, . . . , and the n-th wavelength light intensity.

Abstract: A solid-state image capturing apparatus has a plurality of light receiving sections for performing photoelectric conversion on incident light to generate a signal charge, a charge transfer section provided along a light receiving section arranged in a column direction among the plurality of light receiving sections, for transferring signal charges generated in the light receiving section arranged in the column direction to a predetermined direction, and at least two layers of charge transfer electrodes provided on the charge transfer section via an insulation film, where a plane view width readable from the light receiving section is 50% to the whole edge of the edge of the light receiving section on the charge transfer section side.

Abstract: A method for manufacturing a solid-state image capturing device according to the present invention, in which from a plurality of light receiving sections for photoelectrically converting incident light into signal electric charge, the signal electric charge is read to an electric charge detection section through transfer sections located under respective reading gate electrodes, each electric charge detection being shared by each of the plurality of light receiving sections, the method including: transfer section impurity region forming step of performing an ion implantation process from an ion implantation direction wherein the location of an edge surface of an impurity region of the transfer section and the location of an edge surface of the reading gate electrode corresponding to the impurity region match each other at each reading gate electrode.

Abstract: A solid-state image capturing apparatus has a plurality of light receiving sections for performing photoelectric conversion on incident light to generate a signal charge, a charge transfer section provided along a light receiving section arranged in a column direction among the plurality of light receiving sections, for transferring signal charges generated in the light receiving section arranged in the column direction to a predetermined direction, and at least two layers of charge transfer electrodes provided on the charge transfer section via an insulation film, where a plane view width readable from the light receiving section is 50% to the whole edge of the edge of the light receiving section on the charge transfer section side.

Abstract: A method for manufacturing a solid-state image capturing device according to the present invention, in which from a plurality of light receiving sections for photoelectrically converting incident light into signal electric charge, the signal electric charge is read to an electric charge detection section through transfer sections located under respective reading gate electrodes, each electric charge detection being shared by each of the plurality of light receiving sections, the method including: transfer section impurity region forming step of performing an ion implantation process from an ion implantation direction wherein the location of an edge surface of an impurity region of the transfer section and the location of an edge surface of the reading gate electrode corresponding to the impurity region match each other at each reading gate electrode.

Abstract: In a solid-state image pickup device according to the present invention, groove-like recesses are formed on a semiconductor substrate, and first wiring for vertical transfer electrode use are formed in the groove-like recesses, in order to reduce the distance between the semiconductor substrate and the microlens. According to the solid-state image pickup device, difference in level of a CCD image sensor caused by overlapping the first and second wirings for vertical transfer electrode use can be eliminated, and thereby the distance between the photoelectric conversion elements and the microlens can be reduced, and thus the sensitivity of the CCD image sensor can be reduced.

Abstract: The solid-state image pickup device has a plurality of light-receiving portions, vertical transfer channels and sets of vertical transfer electrodes on a surface of a semiconductor substrate. The light-receiving portions in each column are separated apart by pixel isolation regions. In each vertical transfer channel, the width of a second portion located beside a pixel isolation region is wider than the width of a first portion located beside a light-receiving portion.

Abstract: A solid-state imaging device includes a semiconductor substrate, a light shielding section having an aperture for partially shielding light incident on a surface of the semiconductor substrate, a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge, and a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture.

Abstract: A solid-state imaging device includes a semiconductor substrate, a light shielding section having an aperture for partially shielding light incident on a surface of the semiconductor substrate, a light reception section for converting the light which is incident on the surface of the semiconductor substrate through the aperture to an electric charge, and a passivation section having a substantially flat top surface and overlying the light shielding section, the light reception section and the aperture.