Abstract: An object of the present invention is to provide a biomolecule measuring device that can decrease the influence of crosstalk between chambers. A biomolecule measuring device according to the present invention supplies, to electrodes equipped on chambers, voltages modulated differently to each other.

Abstract: In a sensor device 1 according to the present invention, power is supplied from a control device 10 to a power supply terminal 7 and a ground terminal 9 of the sensor device 1 via a power supply line Vcc and a ground line Gnd, respectively, and a sensor output voltage is sent from a sensor output terminal 8 to the control device 10 via a sensor output line Vout. The control device 10 has disposed therein a constant voltage source 11 that supplies a constant voltage to the sensor device 1, and a pull-up resistor 12 connected between the sensor output line Vout and the constant voltage source 11.

Abstract: Even when a positive/negative surge is applied to a power-supply line, occurrence of malfunction in a semiconductor device is lessened. In an in-vehicle semiconductor device, regulators convert an externally-supplied voltage to generate voltages. A voltage monitoring unit includes a voltage monitoring circuit and a switch, and monitors first to third voltages. An internal circuit has a processor operated by the voltage, and an oscillator operated by the voltage and generating a clock signal to be provided the processor. The voltage monitoring unit stops providing the clock signal to the processor when the voltage level of at least any one of the first to third voltages is below a set value. The voltage monitoring unit provides the clock signal to the processor when the voltage levels of all the first to third voltages exceed the set value.

Abstract: In using a fast Fourier transform for correction of a pulsation error in a conventional air flow rate measuring device, the correction is delayed due to the observation time and computation time required for the fast Fourier transform, leading to difficulty in following changes in the pulsation state at high speed. The air flow rate measuring device according to the present invention comprises an air flow rate detector that generates an output signal in accordance with an air flow rate being measured, an amplitude detector that detects a pulsation amplitude from the output signal, a low-pass filter in which the cut-off frequency changes in accordance with the value of the pulsation amplitude, and a waveform arithmetic unit that computes the waveforms of the output signal from the low-pass filter and the output signal. The waveform arithmetic unit is constituted from multipliers, an adder, and a condition determination process.

Abstract: In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5.

Abstract: In the field of the next generation DNA sequencer, a method for integrating very high sensitive FET sensors having side gates and nanopores as devices used for identifying four kinds of base and for mapping the base sequence of DNA without using reagents, and a semiconductor device having selection transistors and amplifier transistors respectively corresponding to the FET sensors having side gates and nanopores respectively so as to be able to read the variation of a detection current based on the differences among the charges of the four kinds of base without deteriorating the detection sensitivity of the FET sensor, are presented.

Abstract: To provide a gas sensor device having improved measurement accuracy. This gas sensor device is provided with: a sensor element that detects the concentration of a gas by means of heat dissipation from a heat generating body; and a cover with which the sensor element is covered. The cover has a plurality of ventilation sections, which are disposed by being separated with each other in the direction perpendicular to the flowing direction of the gas, and the sensor element is disposed between the ventilation sections.

Abstract: A semiconductor chip having a pad, a protective element, and an internal circuit for providing a semiconductor chip having a protective circuit with high noise resistance, wherein the semiconductor chip is characterized in that the resistance value of metal wiring on a path reaching the pad and the protective element is higher than the resistance value of the protective element.

Abstract: Provided is an electronic device which can easily measure a standby current of an internal circuit of an electronic device after burn-in. The electronic device includes: a power source terminal; a regulator that generates a predetermined voltage from a voltage of the power source terminal; an internal circuit that is operated by an output voltage of the regulator; and a standby terminal through which the regulator and the internal circuit are set to a low power consumption state.

Abstract: The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.

Abstract: In conventional sensor devices, it has been difficult to achieve both EMC resistance and ESD resistance, which are required at the output terminals of an automobile sensor device. A sensor device 1 of the present embodiment comprises: a power supply terminal 2 that supplies power; a ground terminal 3; a sensor element 4, the electrical characteristics of which change in accordance with a physical quantity; a signal processing integrated circuit 5 that processes an output signal output from the sensor element 4; and an output terminal that outputs the output signal processed by the signal processing integrated circuit 5.

Abstract: The present invention is intended to provide a method and a device for detecting a biomolecule with high sensitivity and high throughput over a wide dynamic range without requiring concentration adjustments of a sample in advance. The present invention specifically binds charge carriers to a detection target biomolecule, and detects the detection target biomolecule one by one by measuring a current change that occurs as the conjugate of the biomolecule and the charge carriers passes through a micropore. High-throughput detection of a biomolecule sample is possible with an array of detectors.

Abstract: Provided is a sensor device wherein malfunction due to a negative surge is suppressed. This sensor device is provided with: a sensor element wherein electrical characteristics change corresponding to physical quantities; a signal processing circuit that processes output signals of the sensor element; a first transistor element that supplies currents to the sensor element and the signal processing circuit; a control circuit that controls a base current of the first transistor element; a power supply terminal; and a ground terminal. The sensor device is characterized in that the control circuit is provided with a limiting section that limits a current flowing from the ground terminal toward a base terminal of the first transistor element.

Abstract: Provided is a device that, on the basis of a measurement result of a current that has a low value and a wide distribution, identifies the composition of biological molecules passing through a nanoparticle path. This biomolecule information analysis device obtains a current value by applying an electrical field to biomolecules passing through a gap between a first electrode and a second electrode, and identifies the structure of the biomolecules by integrating the current value and making a comparison with a reference value (see FIG. 1).

Abstract: To a biomolecule measuring apparatus, a semiconductor sensor for detecting ions generated by a reaction between a biomolecular sample and a reagent is set. The semiconductor sensor has a plurality of cells which are arranged on a semiconductor substrate, and each of which detects ions, and a plurality of readout wires. Each of the plurality of cells has an ISFET which has a floating gate and which detects ions, a first MOSFET M2 for amplifying an output from the ISFET, and a second MOSFET M3 which selectively transmits an output from the first MOSFET to a corresponding readout wire R1. Each of the plurality of cells is provided with a third MOSFET M1 which generates hot electrons in the ISFET and which injects a charge to the floating gate of the ISFET. Here, the second MOSFET and the third MOSFET are separately controlled.

Abstract: In the field of the next generation DNA sequencer, a method for integrating very high sensitive FET sensors having side gates and nanopores as devices used for identifying four kinds of base and for mapping the base sequence of DNA without using reagents, and a semiconductor device having selection transistors and amplifier transistors respectively corresponding to the FET sensors having side gates and nanopores respectively so as to be able to read the variation of a detection current based on the differences among the charges of the four kinds of base without deteriorating the detection sensitivity of the FET sensor, are presented.

Abstract: Provided is a biomolecule measuring device capable of effectively reducing measurement noise occurring when measuring a biomolecule sample using a semiconductor sensor. This biomolecule measuring device generates a trigger to react a sample with a reagent after starting to send the reagent onto the semiconductor sensor that detects ion concentration (see FIG. 7).

Abstract: The present invention is intended to provide a method and a device for detecting a biomolecule with high sensitivity and high throughput over a wide dynamic range without requiring concentration adjustments of a sample in advance. The present invention specifically binds charge carriers to a detection target biomolecule, and detects the detection target biomolecule one by one by measuring a current change that occurs as the conjugate of the biomolecule and the charge carriers passes through a micropore. High-throughput detection of a biomolecule sample is possible with an array of detectors.

Abstract: A manipulator device has an arm portion and a hand portion The hand portion includes one or more finger portions that manipulate a target object. Each finger portion includes a slip sensor and multiple contact sensors, with at least one contact sensor at a position proximate to the slip sensor and at least another contact sensor at a position remote from the slip sensor. When the contact sensors at the positions remote from the slip sensor detect contact of the target object and the contact sensors arranged at the positions proximate to the slip sensors do not detect contact, a position of the finger portion is moved by a distance corresponding to the distance between the contact sensors detecting contact of the target object and the contact sensors arranged at the positions proximate to the slip such that a detecting position of the slip sensor is coincident with a position of the target object.

Abstract: There is provided a semiconductor device which includes a plurality of first through-substrate vias that are used to supply power from a first power supply and that penetrate through a substrate structure, and a plurality of second through-substrate vias that are used to supply power from a second power supply different from the first power supply and that penetrate through a substrate structure. The semiconductor device also includes a through-substrate via string composed by the first and second through-substrate vias, in which the first through-substrate vias are located adjacent to one another and the second through-substrate vias are also located adjacent to one another. The through-substrate via string is disposed in the substrate structure for extending in a first direction.