Patents by Inventor Yoshimura Masashi

Yoshimura Masashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process For Producing Aluminum Nitride Crystal And Aluminum Nitride Crystal Obtained Thereby
    Publication number: 20080008642
    Abstract: The present invention provides a method for producing aluminum nitride crystals under mild pressure and temperature conditions. In the production method of aluminum nitride crystals, aluminum nitride crystals are formed and grown in the presence of nitrogen-containing gas by allowing aluminum and the nitrogen to react with each other in a flux containing the following component (A) and component (B), or a flux containing the following component (B). (A) At least one element selected from the group consisting of the alkali metal and the alkaline-earth metal. (B) At least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
    Type: Application
    Filed: August 24, 2005
    Publication date: January 10, 2008
    Applicants: OSAKA UNIVERSITY, KANSAI TECHNOLOGY LICENSING
    Inventors: Yusuke Mori, Takatamo Sasaki, Fumio Kawamura, Yoshimura Masashi, Minoru Kawahara, Hiroaki Isobe