Abstract: In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode 22. A radio-frequency wave is generated by a radio-frequency wave generator 28 and supplied to the electrode 22 via a radio-frequency matching network 30, a blocking capacitor 32, and an RF probe 34 so as to control the plasma in the plasma chamber 10. A judgment device 38 is electrically connected to the RF probe 34. The voltage and current are be measured by the RF probe and the judgment device 38 is used to judge the state of the plasma in the plasma chamber 10.

Abstract: In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode 22. A radio-frequency wave is generated by a radio-frequency wave generator 28 and supplied to the electrode 22 via a radio-frequency matching network 30, a blocking capacitor 32, and an RF probe 34 so as to control the plasma in the plasma chamber 10. A judgment device 38 is electrically connected to the RF probe 34. The voltage and current are be measured by the RF probe and the judgment device 38 is used to judge the state of the plasma in the plasma chamber 10.

Abstract: Certain embodiments provide a plasma etching apparatus and a method for detecting the end point of plasma etching, which can more accurately detect the end point of plasma etching. A radiofrequency wave generated in a radiofrequency generating system 5 propagates through a lead line 30 and is applied to a cathode 9 in a plasma chamber 1. Plasma 11 thereby is generated in the plasma chamber and selectively etches a semiconductor wafer 12. A RF probe 8 measures the voltage and current of the radiofrequency wave flowing in the lead line 30. A determination system 15 may determine the end point of the plasma etching on the basis of either the voltage or current, whichever changes first.

Abstract: In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode 22. A radio-frequency wave is generated by a radio-frequency wave generator 28 and supplied to the electrode 22 via a radio-frequency matching network 30, a blocking capacitor 32, and an RF probe 34 so as to control the plasma in the plasma chamber 10. A judgment device 38 is electrically connected to the RF probe 34. The voltage and current are be measured by the RF probe and the judgment device 38 is used to judge the state of the plasma in the plasma chamber 10.

Abstract: The invention provides a method for purification of an .alpha.-olefin selected from ethylene and propylene for polymerization use which comprises contacting the .alpha.-olefin with an alkali metal carried on a support material. The invention further provides a method for production of a poly-.alpha.-olefin which comprises polymerizing the thus purified .alpha.-olefin in the presence of a polymerization catalyst comprising a transition metal catalyst component and an organometallic catalyst component.