Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends,there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: The present invention utilizes a weighing detector as well as a weighing diameter-controlling method in a crystal-pulling apparatus using a wire method for measuring the crystal weight in accuracy. A pulling wire 4 and a wire rolling means 20, having a wire rolling drum 21, suspended on a weighing detector 2 in a freely rotating way. Accordingly, in the weighing detector 2, the weights of the pulling wire 4 and the wire rolling means 20 are served to balance the loading weight. In addition, the vertical central line 6 of the weighing detector, the rotating axis of the wire rolling drum 21, the rotating axis of the wire rolling means 20, and the axis of pulling crystals are all consistent. Consequently, the whole gravity center is located on the vertical central line of the weighing detector 2. When pulling the single crystals at the same time as rolling the wire, the gravity center of the wire rolling means is shifted merely depending on the diameter variation at the pulling wire.

Abstract: A clamping portion 2 is suspended by wire cables 5. A linkage 3 connects the clamping portion 2 and a contacting portion 4 disposed below the clamping portion 2. One end of a circular-arc member 1 is pivotally supported by a swivel axis 33. The circular-arc member 1 is swiveled by guiding the contacting portion 4 to contact with the shoulder 63 of the crystal body 6.

Abstract: The hold member has a small-diameter portion and a large-diameter portion. An inner cylinder and an outer cylinder are disposed around the hold member in a concentric manner. The upper end of the hold member is affixed to a wire and suspended therefrom. A clearance is formed between the small-diameter portion and the inner cylinder. Clearances are created between the outer peripheral surface of the inner cylinder and the inner peripheral surface of the outer cylinder.

Abstract: This invention provides a apparatus for pulling up crystal bodies, which is capable of firmly clamping and safely pulling up large-diameter crystal bodies regardless of the location of the necked portions formed on the top of the crystal bodies. A large-diameter portion 52 and a necked portion 51 are formed on the top of the crystal body 5. The swaying members 12 of the necked-portion clamp 1 are capable of swaying upward and downward without restraint. The stopper 14 restrains the swaying members 12 to sway below the horizontal plane on which the swaying members 12a are located. The large-diameter portion 52 can pass through the clamp body 11 by lowering the necked-portion clamp 1 to sway the swaying members 12 upward. The swaying members 12 close to clamp the necked portion 51 when the necked-portion clamp 1 reaches a location near the necked portion 51. The distance between the necked-portion clamp 1 and the seed-crystal 3 is adjustable.

Abstract: A weight control in diameter method by using a load cell is applied to a wire-single crystal silicon pulling mechanism, such that the weight of single crystal silicon can be correctly measured, thereby obtaining superior control in diameter and reducing the cost of manufacturing the single crystal silicon.

Abstract: In the process of forming-the shoulder in which the diameter of a crystal is gradually extended from a small seed crystal to a predetermined value, the largest width of a bright ring, which is formed in a boundary between the melt and the crystal pulled up from the melt, is measured, and an arc width of an arbitrary portion of the bright ring located before the largest width portion is measured. When the largest width of the bright ring has reached a predetermined value, a measured value of the arc width at the arbitrary position of the bright ring is used as a reference value, and after that, automatic control is conducted so that the measured value of the arc width can be close to the reference value.

Abstract: In this invention, three equally spaced and "L" shaped hooks 6B are rotatably supported on the upper peripheral wall of the body 6A of the seed holder 6 at pivots 6E. A radiation screen 7 is hung at the front ends of the hooks 6B via three engaging fixtures 6C affixed on its upper rim. The radiation screen 7 shaped like a hollow trancated cone, is used to surround the lower end of the single-crystal being lifted from the quartz crucible 3 which is disposed within the main chamber 1. According to the apparatus for manufacturing a single-crystal which can perform the descending or ascending movements of the radiation screen, the setting operation, and the lifting operation consecutively and automatically. Therefor the apparatus can enhance the productivity and avoid any problems with process automation, furthermore, it is compatible with conventional equipment.

Abstract: An electrode is disposed at the lower end of a radiation screen. The electrode is made of single-crystal silicon. A circuit including a power source is established by contacting the electrode and the seed crystal to a silicon melt.

Abstract: A method for precisely detecting the optimal temperature of the melt in a furnace center for necking step without using a radiation thermometer and two-color thermometer is disclosed. The invention observes a meniscus ring portion at the interface of a seed in a crucible and the melt surface by TV camera. Double rings of high lightness are examined through the image taken by the camera, and in the same time, the variation of temperature can be detected by the number of peaks in each scanning line in a picture of the TV screen.

Abstract: This invention provides a method for pulling a single crystal silicon whose diameter is more than 200 mm. The single crystal silicon pulled by the method of this invention has a desired oxygen concentration and a uniform oxygen concentration distribution along its longitudinal axis. In the process of this invention, the single crystal silicon and the quartz crucible are driven to rotate in reverse directions, and the rotation speed of the single crystal silicon is set within the range of 8 to 16 rpm and to be more than twice the rotating speed of the crucible. The rotation speed of the crucible is set to be at its minimum value during pulling a body portion which begins from the beginning end of the single-crystal body and terminates at a location apart from the beginning end within a distance of 10% of the total length of the single-crystal body. Subsequently, the rotation speed of the crucible is gradually raised and is set to no more than a maximum value of 8 rpm.