Patents by Inventor Yoshinobu Ise

Yoshinobu Ise has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Film deposition method
    Patent number: 8962495
    Abstract: A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other.
    Type: Grant
    Filed: June 12, 2013
    Date of Patent: February 24, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Hiroaki Ikegawa, Masahiko Kaminishi, Yoshinobu Ise, Jun Ogawa
  • Apparatus and method of forming thin film including adsorption step and reaction step
    Patent number: 8778812
    Abstract: A film deposition method includes an adsorption step of adsorbing a first reaction gas onto a substrate by supplying the first reaction gas from a first gas supplying portion for a predetermined period without supplying a reaction gas from a second gas supplying portion while separating a first process area and a second process area by supplying a separation gas from a separation gas supplying portion and rotating a turntable; and a reaction step of having the first reaction gas adsorbed onto the substrate react with a second reaction gas by supplying the second reaction gas from the second gas supplying portion for a predetermined period without supplying a reaction gas from the first gas supplying portion while separating the first process area and the second process area by supplying the separation gas from the separation gas supplying portion and rotating the turntable.
    Type: Grant
    Filed: December 26, 2012
    Date of Patent: July 15, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Haruhiko Furuya, Jun Ogawa, Masahiko Kaminishi, Yoshinobu Ise, Yoshitaka Enoki
  • FILM DEPOSITION METHOD
    Publication number: 20130337658
    Abstract: A film deposition method includes a first step and a second step. In the first step, a first reaction gas is supplied from a first gas supply part to a first process area, and a second reaction gas capable of reacting with the first reaction gas is supplied from a second gas supply part to a second process area, while rotating a turntable and supplying a separation gas to separate the first process area and the second process area from each other. In the second step, the second reaction gas is supplied from the second gas supply part to the second process area without supplying the first reaction gas from the first gas supply part for a predetermined period, while rotating the turntable and supplying the separation gas to separate the first process area and the second process area from each other.
    Type: Application
    Filed: June 12, 2013
    Publication date: December 19, 2013
    Applicant: Tokyo Electron Limited
    Inventors: Hiroaki Ikegawa, Masahiko Kaminishi, Yoshinobu Ise, Jun Ogawa