Abstract: A spindle system includes: a spindle motor section controlled to rotate at a predetermined speed; and a clamp base section disposed at an upper part of the spindle motor section and having screw holes that are formed in a side surface of the clamp base section and extend in a radial direction. The spindle system further includes: screws respectively inserted into the screw holes and changing a center of gravity of the clamp base section; a clamp fixing section that fixes the spindle motor section and the clamp base section; and an elastic member disposed between the clamp base section and the clamp fixing section, and contacted by and pressed against the screws.

Abstract: A treatment utilizing chemical vapor deposition is conducted on a major treatment surface (14) of a semiconductor substrate (8) under the condition where the semiconductor substrate (8) is held on a bottom surface of a stage (10) by suction force which is caused by reducing pressure in a vacuum pocket (13). In such a treatment, inert gas supplied by an inert gas feeder (24) is fed through a fluid duct (43) and inert gas feed holes (52) to an inert gas jetting gap (32) which is a space between an outermost circular surface (31) of an outer portion of a substrate holding surface (11) and a reverse major surface (12) of the semiconductor substrate (8). The inert gas is jetted out of the inert gas jetting gap (32) to a reaction chamber (6). Jets of the inert gas prevents undesirable objects or reaction byproduct (34) from easily penetrating in an inner region of the substrate holding surface (11).

Abstract: The main feature of the present invention is to provide a reaction chamber for a chemical vapor deposition apparatus improved to achieve a uniform film deposition of high accuracy stably. The apparatus includes a wafer heating stage 28 for holding a wafer 14 with the surface downwards and for heating the wafer 14. The wafer heating stage 28 rotates about the center of the stage. In a low position opposing the wafer heating stage 28, a gas supplying head 37 is provided so as to form a constant spacing region 53 for supplying reaction gas towards the wafer heating stage 28. The reaction chamber includes a reaction chamber forming member 54 surrounding in a circumferential direction the spacing region 53 between the wafer heating stage 28 and the gas supplying head 37 to establish a reaction chamber having the spacing region 53 closed.

Abstract: In order to prevent deposition of a reaction byproduct on the peripheries of reaction gas introduction holes, an annular inert gas injection member having a number of inert gas injection holes is provided around the reaction gas introduction holes. An inert gas is injected from inert gas injection holes toward an exhaust passage. This inert gas promotes a flow of an exhaust gas from a reaction space and forcibly flows toward the exhaust passage. Thus, a reaction byproduct contained in the exhaust gas is not remarkably deposited in the vicinity of the peripheries of the reaction gas introduction holes but quickly discharged into the exhaust passage. Thus, the reaction byproduct is hardly deposited around the reaction gas introduction holes.

Abstract: A chemical coating apparatus has a heat exchanger disposed along a pipe for transporting a chemical for adjusting the temperature of the chemical to a predetermined value through a corresponding flow of constant-temperature water. Further, a temperature detector is provided in the vicinity of a nozzle through which the chemical is discharged to detect the temperature of the constant-temperature water. Therefore, it is possible to make uniform the thickness of chemical films applied to objects.