Abstract: A vacuum processing apparatus includes a heat receiving member having a heat receiving surface configured to receive heat from a heat source; and a coolant path formed within the heat receiving member along the heat receiving surface and configured to allow a coolant to flow therein. The coolant path has, at a pair of second inner wall surfaces intersecting with a first inner wall surface disposed near the heat receiving surface, a first groove extending in an inclined direction toward the first inner wall surface with respect to a flow direction of the coolant.

Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: A vacuum processing apparatus includes a heat receiving member having a heat receiving surface configured to receive heat from a heat source; and a coolant path formed within the heat receiving member along the heat receiving surface and configured to allow a coolant to flow therein. The coolant path has, at a pair of second inner wall surfaces intersecting with a first inner wall surface disposed near the heat receiving surface, a first groove extending in an inclined direction toward the first inner wall surface with respect to a flow direction of the coolant.

Abstract: A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.

Abstract: An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power supply in an cryogenic temperature environment where a substrate temperature is controlled to be less than or equal to ?35° C.; generating a plasma by adding a hydrocarbon gas containing at least 3 carbon atoms to an etching gas containing carbon, hydrogen, and fluorine; and etching a silicon oxide film or a laminated film made up of laminated layers of silicon-containing films having different compositions using the generated plasma.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power supply in an cryogenic temperature environment where a substrate temperature is controlled to be less than or equal to ?35° C.; generating a plasma by adding a hydrocarbon gas containing at least 3 carbon atoms to an etching gas containing carbon, hydrogen, and fluorine; and etching a silicon oxide film or a laminated film made up of laminated layers of silicon-containing films having different compositions using the generated plasma.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.

Abstract: A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.

Abstract: There is provided a spot-weldable bonded clad metal plate wherein the metal sheets are 0.05-1.0 mm thick and at least 0.4 mm thick, respectively, the adhesive layer has a thickness of 15-60 microns and the adhesive layer contains 10-100 g/m.sup.2 of metallic powder having a particle diameter corresponding to 0.5-1.5 times the thickness of the adhesive layer. The metallic powder is not necessarily entirely metallic and, for example, glass beads having surfaces coated with a metal can also be used. As the adhesive, a polyamide resin adhesive, particularly, a hot melt type polyamide resin adhesive is preferred.The bonded clad metal plate shows excellent adhesion strength, and in spite of such thin metal sheets, does not blister when spot-welded.

Abstract: A novel hot-melt adhesive composition comprising 100 parts by weight of a polyamide copolymer resin having a melting point of about 80.degree. to about 160.degree. C. and composed of at least three monomers, about 5 to about 30 parts by weight of a terpene-phenol resin having a softening point of about 80.degree. to about 120.degree. C., and about 5 to about 10 parts by weight of a plasticizer.

Abstract: A hot-melt adhesive composition containing a methoxymethylated terpolymer prepared from the corresponding terpolymer that is soluble in lower alcohols and contains a higher nylon salt or an .omega.-amino acid, or a lactam, each of which has more than 10 carbon atoms, and wherein the methoxymethylation ratio of the nylon copolymer is in the range of 10 to 30%.

Abstract: A laminate for interior finish material comprising a frame and a covering material thermally adhered to each other with a hot melt adhesive containing a polyamide copolymer of a melting point of about 80.degree. - 140.degree. C as principal component.

Abstract: A hot stamp transfer press plate comprising a transfer medium on which a transfer layer has been applied in a desired pattern, said transfer layer consisting of hot stamp ink wherein there is employed, as the binder resin of the ink, methoxymethylated nylon copolymer obtained by N-methoxymethylation of an alcohol-soluble nylon copolymer containing a higher nylon salt, .omega.-amino acid or lactam, each of which has 10 or more carbon atoms.

Abstract: A thermoplastic hot melt adhesive composition for bonding metals which comprises a homogeneous mixture of (A) 60 to 90 percent by weight of a nylon material selected from the group consisting of homopolymers and copolymers of nylon monomer selected from the group consisting of nylon salts having at least 10 carbon atoms, nylon-forming .omega.-amino acids and nylon-forming lactams, and (B) 10 to 40 percent by weight of an ethylene/vinyl acetate copolymer containing 1 to 25 weight percent of vinyl acetate.