Patents by Inventor Yoshinobu Shiba

Yoshinobu Shiba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11495452
    Abstract: A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula SinH2n, wherein n is 5, 6, or 7.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: November 8, 2022
    Assignees: TOHKU UNIVERSITY, NIPPON SHOKUBAI CO., LTD.
    Inventors: Akinobu Teramoto, Yoshinobu Shiba, Takashi Abe, Akira Nishimura
  • Patent number: 10927454
    Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: February 23, 2021
    Assignees: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Tohoku University
    Inventors: Shinichi Nishimura, Kensuke Watanabe, Yoshihito Yamada, Akinobu Teramoto, Tomoyuki Suwa, Yoshinobu Shiba
  • Publication number: 20200335322
    Abstract: A method for preparing a silicon nitride film with a high deposition rate and a reduced damage to the substrate and/or the underlying layer formed under the silicon nitride film. The method for preparing a silicon nitride film contains the steps of irradiating a nitride with an ultraviolet light, and contacting the nitride irradiated with the ultraviolet light and a hydrogenated cyclic silane represented by a general formula SinH2n, wherein n is 5, 6, or 7.
    Type: Application
    Filed: March 3, 2020
    Publication date: October 22, 2020
    Applicants: TOHOKU UNIVERSITY, NIPPON SHOKUBAI CO., LTD.
    Inventors: Akinobu TERAMOTO, Yoshinobu SHIBA, Takashi ABE, Akira NISHIMURA
  • Patent number: 10559460
    Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container; a precursor gas supply part configured to supply a precursor gas into the processing container; a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container; and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: February 11, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Shimizu, Katsutoshi Ishii, Akinobu Teramoto, Tomoyuki Suwa, Yoshinobu Shiba
  • Publication number: 20190390332
    Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.
    Type: Application
    Filed: February 14, 2017
    Publication date: December 26, 2019
    Applicants: Toshiba Mitsubishi-Electric Industrial Systems Corporation, Tohoku University
    Inventors: Shinichi NISHIMURA, Kensuke WATANABE, Yoshihito YAMADA, Akinobu TERAMOTO, Tomoyuki SUWA, Yoshinobu SHIBA
  • Publication number: 20190074177
    Abstract: There is provided a film forming apparatus for forming a silicon nitride film on a substrate by having a precursor gas containing silicon to react with a reaction gas containing nitrogen, including: a processing container configured to form a vacuum atmosphere; a substrate mounting part installed in the processing container, a precursor gas supply part configured to supply a precursor gas into the processing container, a reaction gas supply part configured to supply a reaction gas containing nitrogen into the processing container, and an ultraviolet irradiating part configured to excite the reaction gas before the reaction gas reacts with the precursor gas, wherein a substrate on the substrate mounting part is not irradiated with an ultraviolet ray emitted from the ultraviolet irradiating part.
    Type: Application
    Filed: September 6, 2018
    Publication date: March 7, 2019
    Inventors: Akira SHIMIZU, Katsutoshi ISHII, Akinobu TERAMOTO, Tomoyuki SUWA, Yoshinobu SHIBA
  • Patent number: 9999622
    Abstract: The invention provides a pyrazolothiazole compound of the formula [I], or a pharmaceutically acceptable salt thereof: The compound of the invention has JAK1 inhibitory activity, and thus, immunosuppressive effect, anti-inflammatory effect and anti-proliferative effect, and is useful in the treatment of the diseases, for example, rheumatoid arthritis, inflammatory bowel disease, psoriasis and vasculitis, bronchial asthma, chronic obstructive pulmonary disease and eosinophilic sinusitis, nasal polyp.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: June 19, 2018
    Assignee: NIPPON SHINYAKU CO., LTD.
    Inventors: Yoshinobu Shiba, Satoshi Akiyama
  • Patent number: 9937176
    Abstract: The invention provides a pyrazolothiazole compound of the formula [I], or a pharmaceutically acceptable salt thereof: The compound of the invention has JAK1 inhibitory activity, and thus, immunosuppressive effect, anti-inflammatory effect and anti-proliferative effect, and is useful in the treatment of the diseases, for example, rheumatoid arthritis, inflammatory bowel disease, psoriasis and vasculitis, bronchial asthma, chronic obstructive pulmonary disease and eosinophilic sinusitis, nasal polyp.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: April 10, 2018
    Assignee: NIPPON SHINYAKU CO., LTD.
    Inventors: Yoshinobu Shiba, Satoshi Akiyama
  • Publication number: 20180092919
    Abstract: The invention provides a pyrazolothiazole compound of the formula [I], or a pharmaceutically acceptable salt thereof: The compound of the invention has JAK1 inhibitory activity, and thus, immunosuppressive effect, anti-inflammatory effect and anti-proliferative effect, and is useful in the treatment of the diseases, for example, rheumatoid arthritis, inflammatory bowel disease, psoriasis and vasculitis, bronchial asthma, chronic obstructive pulmonary disease and eosinophilic sinusitis, nasal polyp.
    Type: Application
    Filed: December 4, 2017
    Publication date: April 5, 2018
    Applicant: NIPPON SHINYAKU CO., LTD.
    Inventors: Yoshinobu Shiba, Satoshi Akiyama
  • Publication number: 20170252341
    Abstract: The invention provides a pyrazolothiazole compound of the formula [I], or a pharmaceutically acceptable salt thereof: The compound of the invention has JAK1 inhibitory activity, and thus, immunosuppressive effect, anti-inflammatory effect and anti-proliferative effect, and is useful in the treatment of the diseases, for example, rheumatoid arthritis, inflammatory bowel disease, psoriasis and vasculitis, bronchial asthma, chronic obstructive pulmonary disease and eosinophilic sinusitis, nasal polyp.
    Type: Application
    Filed: September 2, 2015
    Publication date: September 7, 2017
    Applicant: NIPPON SHINYAKU CO., LTD.
    Inventors: Yoshinobu SHIBA, Satoshi AKIYAMA
  • Patent number: 8158775
    Abstract: The present invention provides a method for removing a 2-cyanoethoxymethyl (CEM) group, which substitutes the 2?-hydroxyl group of each ribose of an oligonucleic acid derivative, with good reproducibility and high efficiency. The present invention further provides a method for producing an oligonucleic acid derivative represented by the following general formula (11), characterized by using a sulfoxide-based solvent or an amide-based solvent or a mixture thereof as a reaction solvent in the step of removing a protecting group, which protects the 2?-hydroxyl group of each ribose of an oligonucleic acid derivative represented by the following general formula (10) by allowing TBAF to act on the oligonucleic acid derivative.
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: April 17, 2012
    Assignee: Nippon Shinyaku Co., Ltd.
    Inventor: Yoshinobu Shiba
  • Publication number: 20090149645
    Abstract: A method is provided for removing a 2-cyanoethoxymethyl (CEM) group and substituting the 2?-hydroxyl group of each ribose of an oligonucleic acid derivative with good reproducibility and high efficiency.
    Type: Application
    Filed: February 26, 2007
    Publication date: June 11, 2009
    Applicant: NIPPON SHINYAKU CO., LTD.
    Inventor: Yoshinobu Shiba