Abstract: An apparatus for making a silicon single crystal large in diameter dependently on the Czochralski process, wherein appropriate openings (11) are provided on the warmth keeping over (10) so as to prevent an undesirable influence caused by atmospheric gas. The major elements of the apparatus are that the sum of areas of the openings (11) is larger than the area of gap (18) formed between the lower end of the warmth keeping cover (10) and the level of silicon solution, and that the warmth keeping cover and the heat insulating member (12) are composed of sheet metal.

Abstract: A crucible including a cylindrical partition member arranged concentrically therein for use in a silicon single crystal growing apparatus. The bottom of the crucible located on the inner side of the partition member has a thickness which is not less than 1.3 times and not greater than 4 times the thickness of the partition member and it also has a porosity which is between 0 and 0.2% in its inner layer and between 0.2 and 15% in its outer layer as compared with the porosity of the partition member which is 0.2% or less. By virtue of the foregoing, a D.F. ratio (ratio of dislocation free) of 80% or over can be expected.

Abstract: A silicon single crystal manufacturing apparatus according to the CZ method which includes a partition member for dividing a quartz crucible into a single crystal growing section and a material melting section and having at least one small hole for permitting the passage of molten silicon, and a heat keeping cover for covering the partition member and the material melting section. The heat keeping cover is made of a sheet of metal selected from the group consisting of Ta, Mo and W and containing Fe 50 ppm or less and Cu 10 ppm or less. The metal sheet includes a surface layer composed of a silicon-enriched layer, and the depth of an area of the silicon-enriched layer in which the content of Si is greater than the contents of Fe and Cu at the same position therein is not less than 10 .mu.m from the surface. The content of Fe in the silicon-enriched layer is not greater than 5 ppm.

Abstract: A silicon single crystal manufacturing apparatus which pulls a large-diameter silicon single crystal with improved yield and efficiency according to the rotary CZ method.As a means of preventing the solidification of molten silicon in the vicinity of a partition member, that is, one of factors which deteriorate the yield and efficiency, a heat shielding member having a predetermined position and shielding width is arranged to face a meniscus position of molten silicon thereby shielding the heat radiation from the meniscus portion.Its shape is a cylindrical shape, truncated-cone shape or a shape formed at its cylindrical bottom with a flange having a central opening.Its material primarily consists of a metal such as molybdenum or tantalum or an electric resistance heater.

Abstract: According to the present invention, the inside of a crucible in which a molten raw material is placed is partitioned off with a partition ring so that a pulled single crystal is surrounded and the molten raw material may be moved and granular silicon is supplied to the outside of the partition ring, thereby to form the whole surface of outside molten liquid as a granular silicon soluble region so as to maintain the molten liquid surface on the inside of the partition ring at almost a constant level, and also to set the temperature of the molten liquid on the outside of the partition ring higher than the temperature of the inside thereof at least by 10.degree. C. or higher by covering the partition ring and the molten liquid surface on the outside thereof with a heat keeping board.

Abstract: Method for manufacturing a large columner silicon single crystal having a diameter of 12 cm-30 cm by pulling up a crystal, growing, and rotating it in one direction, from molten silicon material in a quartz crucible rotating in the other direction. The inside of the quartz crucible is divided into two sections--the peripheral section for feeding and melting raw materials and the central section for growing and pulling the crystal--by means of a cylindrical partition. The material feeding and melting section and the partition are sufficiently covered by an insulating board to reduce radiant energy heat loss and to keep the temperature at least above the freezing point of the molten materials in order to prevent the molten materials from solidifying at or around the inner wall of the cylindrical partition.

Abstract: The present invention relates to a method and apparatus for manufacturing silicon single crystals by the Czochralski method, including the steps of dividing a crucible containing molten silicon into an inner single crystal growing section and an outer material feeding section to allow said molten silicon to move slowly, and pulling a silicon single crystal from said single crystal growing section while continuously feeding silicon starting material to said material feeding section, the improvement wherein temperatures of said material feeding section and said molten silicon are maintained higher than a melting point of silicon by at least more than 12.degree. C.

Abstract: A silicon single crystal manufacturing apparatus in which a partition member formed with at least one small hole through its lower part is arranged in a rotating quartz crucible so as to surround a large cylindrical silicon single crystal which is rotated and pulled. The whole or part of the partition member is made from cellular silica glass whose cell content (volume percentage) is between 0.01 and 15% or less than 0.01% but increased to 0.01 through 15% by the heat used for melting starting silicon material. Thus, the molten material contacting with the inside of the partition member is prevented from decreasing in temperature and solidification of the molten material from this portion is prevented.

Abstract: An apparatus for manufacturing a single silicon crystal comprises a quartz crucible accomodated into a graphite crucible, a partition member partitioning molten silicon material in the quartz crucible into a single silicon growing portion on the inner side and a material melting portion on the outer side, a heater for maintaining the molten silicon material in the single silicon growing portion at a temperature appropriate for growing the single silicon crystal and for supplying heat for melting the raw materials fed into the material melting portion, and small holes made in the partition member. The partition member is made of an opaque quartz glass. The material melting portion is replenished with the raw materials and single silicon crystal is pulled from the single silicon growing portion. Molton silicon material moves from the material melting portion into the single silicon growing portion through small holes made in the partition member.

Abstract: An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.