Patents by Inventor Yoshinori Kinase
Yoshinori Kinase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8920666Abstract: Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.Type: GrantFiled: May 14, 2010Date of Patent: December 30, 2014Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shinichi Igarashi, Yukio Inazuki, Hideo Kaneko, Hiroki Yoshikawa, Yoshinori Kinase
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Patent number: 8309277Abstract: A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.Type: GrantFiled: June 10, 2010Date of Patent: November 13, 2012Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shinichi Igarashi, Yukio Inazuki, Hideo Kaneko, Hiroki Yoshikawa, Yoshinori Kinase
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Publication number: 20100316942Abstract: A photomask is manufactured from a photomask blank comprising a transparent substrate and a light-shielding film consisting of upper and lower layers of transition metal-containing silicon base materials, the content of O+N in the upper layer being higher than that of the lower layer. The light-shielding film is processed in two steps by fluorine dry etching through a resist pattern such that a lower portion of the film is left behind, and oxygen-containing chlorine dry etching for removing the remainder of the film.Type: ApplicationFiled: June 10, 2010Publication date: December 16, 2010Inventors: Shinichi IGARASHI, Yukio INAZUKI, Hideo KANEKO, Hiroki YOSHIKAWA, Yoshinori KINASE
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Publication number: 20100291478Abstract: Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.Type: ApplicationFiled: May 14, 2010Publication date: November 18, 2010Inventors: Shinichi IGARASHI, Yukio Inazuki, Hideo Kaneko, Hiroki Yoshikawa, Yoshinori Kinase
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Patent number: 7771893Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.Type: GrantFiled: July 20, 2006Date of Patent: August 10, 2010Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
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Patent number: 7625677Abstract: A half-tone stacked film is designed so as to have a stacked structure of a first half-tone film and a second half-tone film, and the film thickness d, the refractive index n to exposure light and the extinction coefficient k of these half-tone films are designed so that one of these half-tone films becomes a phase advancement film and the other becomes a phase retardation film. When the film thickness (nm), the refractive index, and the extinction coefficient of the phase advancement film are represented by d(+), n(+) and k(+), respectively; and the film thickness (nm), the refractive index, and the extinction coefficient of the phase retardation film are d(?), n(?), and k(?), respectively; the phase advancement film has the relationship of k(+)>a1·n(+)+b1, and the phase retardation film has the relationship of k(?)<a2·n(?)+b2.Type: GrantFiled: February 3, 2006Date of Patent: December 1, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Motohiko Morita, Tadashi Saga
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Patent number: 7625676Abstract: A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.Type: GrantFiled: October 21, 2005Date of Patent: December 1, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima
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Patent number: 7618753Abstract: A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).Type: GrantFiled: August 10, 2005Date of Patent: November 17, 2009Assignees: Shin-Etsu Chemical Co., Ltd., Toppan Printing Co., Ltd.Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Publication number: 20070259276Abstract: A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).Type: ApplicationFiled: August 10, 2005Publication date: November 8, 2007Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Mikio Takagi, Yuichi Fukushima, Tadashi Saga
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Patent number: 7232631Abstract: The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane and is a low stress membrane having no defects and excellent uniformity and relates to its forming method. The SOI substrate is an SOI wafer which is obtained by forming an oxidized film on a first silicon wafer, forming a separation layer by hydrogen ion implantation into the first silicon wafer via the oxidized film, bonding the first silicon wafer onto a second silicon wafer, and cleaving the first silicon wafer from the second silicon wafer at the separation layer so that a silicon membrane layer is formed on the second silicon layer via the oxidized film.Type: GrantFiled: May 4, 2004Date of Patent: June 19, 2007Assignee: Dai Nippon Prinitng Co., Ltd.Inventors: Kenichi Morimoto, Yoshinori Kinase, Yuki Aritsuka
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Publication number: 20070020534Abstract: A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm?1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.Type: ApplicationFiled: July 20, 2006Publication date: January 25, 2007Inventors: Hiroki Yoshikawa, Hiroshi Kubota, Yoshinori Kinase, Satoshi Okazaki, Tamotsu Maruyama, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima, Tadashi Saga
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Publication number: 20060177746Abstract: A half-tone stacked film is designed so as to have a stacked structure of a first half-tone film and a second half-tone film, and the film thickness d, the refractive index n to exposure light and the extinction coefficient k of these half-tone films are designed so that one of these half-tone films becomes a phase advancement film and the other becomes a phase retardation film. When the film thickness (nm), the refractive index, and the extinction coefficient of the phase advancement film are represented by d(+), n(+) and k(+), respectively; and the film thickness (nm), the refractive index, and the extinction coefficient of the phase retardation film are d(?), n(?), and k(?), respectively; the phase advancement film has the relationship of k(+)>a1·n(+)+b1, and the phase retardation film has the relationship of k(?)<a2·n(?)+b2.Type: ApplicationFiled: February 3, 2006Publication date: August 10, 2006Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Motohiko Morita, Tadashi Sage
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Publication number: 20060088774Abstract: A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.Type: ApplicationFiled: October 21, 2005Publication date: April 27, 2006Inventors: Hiroki Yoshikawa, Yukio Inazuki, Yoshinori Kinase, Satoshi Okazaki, Takashi Haraguchi, Masahide Iwakata, Yuichi Fukushima
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Patent number: 6869736Abstract: Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.Type: GrantFiled: September 3, 2001Date of Patent: March 22, 2005Assignee: Dai Nippon Printing Co., Ltd.Inventors: Hiro-o Nakagawa, Toshiaki Motonaga, Yoshinori Kinase, Satoshi Yusa, Shigeki Sumida, Toshifumi Yokoyama, Chiaki Hatsuta, Junji Fujikawa, Masashi Ohtsuki
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Publication number: 20050008946Abstract: The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane and is a low stress membrane having no defects and excellent uniformity and relates to its forming method. The SOI substrate is an SOI wafer which is obtained by forming an oxidized film on a first silicon wafer, forming a separation layer by hydrogen ion implantation into the first silicon wafer via the oxidized film, bonding the first silicon wafer onto a second silicon wafer, and cleaving the first silicon wafer from the second silicon wafer at the separation layer so that a silicon membrane layer is formed on the second silicon layer via the oxidized film.Type: ApplicationFiled: May 4, 2004Publication date: January 13, 2005Inventors: Kenichi Morimoto, Yoshinori Kinase, Yuki Aritsuka
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Patent number: 6764792Abstract: The invention relates to a halftone phase shift photomask which is controlled with precision in terms of its transmittance at a wavelength applied to inspection, and measuring equipment, so that its quality can easily be assured even when its phase difference at an exposure wavelength is controlled at 180° C. with precision and its transmittance is set at 1 to 20% as desired at that wavelength. The halftone phase shift photomask (107) comprises on a transparent substrate (101) and a halftone phase shift film containing at least tantalum, oxygen, carbon and nitrogen, and has a multilayer structure comprising at least two or more different layers (102) and (103).Type: GrantFiled: April 27, 2001Date of Patent: July 20, 2004Assignee: Dai Nippon Printing Co., Ltd.Inventors: Junji Fujikawa, Yoshinori Kinase, Takafumi Okamura, Hiroshi Mohri, Toshifumi Yokoyama, Haruo Kokubo
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Patent number: 6740455Abstract: A photomask is produced which enables the simplification of the steps of lithography. A photomask is provided with shielding patterns made of shielding metallic thin film on a transparent substrate, wherein the photomask further comprises translucent patterns mainly including tantalum of materials selected from tantalum silicide, tantalum oxide, tantalum nitride or mixture thereof.Type: GrantFiled: December 21, 2001Date of Patent: May 25, 2004Assignee: Dainippon Printing Co., Ltd.Inventors: Kenji Noguchi, Toshiaki Motonaga, Hiro-o Nakagawa, Yasutaka Morikawa, Toshifumi Yokoyama, Takashi Tominaga, Yoshinori Kinase, Junji Fujikawa, Yoichi Takahashi
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Publication number: 20030186135Abstract: Disclosed is a blank for a halftone phase shift photomask comprising a transparent substrate and a halftone phase shift layer formed thereon, the halftone phase shift layer being provided with a layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen and being formed of a multilayer film with two or more layers, wherein the multilayer film contains a layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy and the layer whose major component is either one of chromium and tantalum or a chromium tantalum alloy is laminated on the side closer to the transparent substrate than the layer containing molybdenum silicide as its major component and either one or both of oxygen and nitrogen.Type: ApplicationFiled: March 4, 2003Publication date: October 2, 2003Inventors: Hiro-o Nakagawa, Toshiaki Motonaga, Yoshinori Kinase, Satoshi Yusa, Shigeki Sumida, Toshifumi Yokoyama, Chiaki Hatsuta, Junji Fujikawa, Masashi Ohtsuki
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Patent number: 6599667Abstract: A blank for halftone phase shift photomask is disclosed. The blank has a transparent substrate, a halftone phase shift layer and a light shielding film, the halftone phase shift layer and the light shielding film being layered in this order on the transparent substrate, and the l light shielding film is a single layered or multiple layered film which has a layer of tantalum.Type: GrantFiled: April 26, 2001Date of Patent: July 29, 2003Assignee: Dai Nippon Printing Co., Ltd.Inventors: Satoshi Yusa, Toshifumi Yokoyama, Shigeki Sumida, Toshiaki Motonaga, Yoshinori Kinase, Hiro-o Nakagawa, Chiaki Hatsuta, Junji Fujikawa, Masashi Ohtsuki
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Patent number: 6458496Abstract: A blank for a halftone phase shift photomask in the present invention comprises a transparent substrate and a halftone phase shift film provided thereon, and said halftone phase shift film has a multilayer construction in which at least a first layer capable of being etched with a chlorinated gas and a second layer capable of being etched with a fluorinated gas are disposed in this order from the side near said transparent substrate. A film made of tantalum silicides is suitable to use as the second layer of the halftone phase shift film.Type: GrantFiled: December 14, 2000Date of Patent: October 1, 2002Assignee: Dai Nippon Printing Co., Ltd.Inventors: Toshiaki Motonaga, Toshifumi Yokoyama, Takafumi Okamura, Yoshinori Kinase, Hiroshi Mohri, Junji Fujikawa, Hiro-o Nakagawa, Shigeki Sumida, Satoshi Yusa, Masashi Ohtsuki