Abstract: A cooling apparatus includes a duct provided above a cooling target and configured to guide an air discharged after absorbing heat generated inside the cooling target to the cooling target, a cooler provided in the duct and configured to cool the air flowing in the duct, and an adjusting mechanism provided downstream of the cooler and configured to adjust the air discharged from the duct to the cooling target, and the duct receives the air discharged from one side of the cooling target and directed upward, guides the air to another side of the cooling target, and discharges the air downward on the other side, and the adjusting mechanism changes a position of an opening at a discharge port of the duct.

Abstract: An air conditioner includes: a turbo compressor that compresses a heat medium; a heat exchanger that exchanges heat of the heat medium supplied from the turbo compressor with an atmosphere; and a supply flow path and a discharge flow path that connect the turbo compressor and the heat exchanger. At least one of the supply flow path and the discharge flow path includes piping, and the piping includes a gas barrier layer that covers a surface of a synthetic resin.

Abstract: A cooling device includes: a duct that guides air that has absorbed heat generated inside a cooling target and has been discharged, to the cooling target; a cooler that is provided in the duct and cools the air flowing inside the duct; and an adjusting mechanism that is located on a downstream side of the cooler, adjusts an amount of the air discharged from the duct into a room where the cooling target is installed.

Abstract: A heating medium compression apparatus includes: first and second compressors compressing a heating medium; suction side and discharge side pipings connecting the first and second compressors to a heat exchanger; a connection piping connecting a discharge side of the first compressor and a suction side of the second compressor in series; and a control unit controlling a flow rate of the heating medium flowing in the suction side piping, the discharge side piping, and the connection piping. The control unit alternatively connects the first or second compressor to the suction side and discharge side pipings, or connects the first and second compressors in series between the suction side and discharge side pipings and performs control such that the flow rate of the heating medium suctioned into the second compressor connected in series becomes higher than that of the heating medium discharged from the first compressor.

Abstract: A management device includes: storage unit which stores a known intake air temperature of a heating element, and a heat transfer characteristic of a cooling device; heat extraction amount calculation unit which calculates a heat extraction amount of the cooling device, by use of the refrigerant information input by the input means, and a cooling capacity of the refrigerant; and air volume calculation unit which calculates an air volume of air supplied to the cooling device, by applying the heat extraction amount to air volume dependence of the heat extraction amount, being derived by use of air volume dependence of a difference temperature between a temperature of the refrigerant and a temperature of exhaust air from the heating element, and the heat transfer characteristic, the air volume dependence of the difference temperature being derived by use of the intake air temperature, the power consumption, and the refrigerant information.

Abstract: A management device includes: storage unit which stores a known intake air temperature of a heating element, and a heat transfer characteristic of a cooling device; heat extraction amount calculation unit which calculates a heat extraction amount of the cooling device, by use of the refrigerant information input by the input means, and a cooling capacity of the refrigerant; and air volume calculation unit which calculates an air volume of air supplied to the cooling device, by applying the heat extraction amount to air volume dependence of the heat extraction amount, being derived by use of air volume dependence of a difference temperature between a temperature of the refrigerant and a temperature of exhaust air from the heating element, and the heat transfer characteristic, the air volume dependence of the difference temperature being derived by use of the intake air temperature, the power consumption, and the refrigerant information.

Abstract: A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 ?m higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlzGa1?zN (0.03?z?0.15).

Abstract: A method of manufacturing semiconductor elements includes: disposing a semiconductor layer made of a nitride semiconductor on a first wafer; and bonding a second wafer to the first wafer via the semiconductor layer. The first wafer has an upper surface including a first region and a second region surrounding a periphery of the first region and located lower than the first region. In a top view of the first wafer, a first distance between an edge of the first wafer and the first region of the first wafer in each of a plurality of first directions parallel to respective m-axes of the semiconductor layer is smaller than a second distance between the edge of the first wafer and the first region of the first wafer in each of a plurality of second directions parallel to respective a-axes of the semiconductor layer.

Abstract: A method for manufacturing a semiconductor element includes: providing a wafer comprising first and second regions at an upper surface of the wafer, the second region being located at a periphery of the first region and being at a lower position than the first region; and forming a semiconductor layer made of a nitride semiconductor at the upper surface of the wafer. In a top-view, the first region comprises an extension portion at an end portion of the first region in a first direction that passes through the center of the wafer parallel to an m-axis of the semiconductor layer, the extension portion extending in a direction from a center of the wafer toward an edge of the wafer or in a direction from an edge of the wafer toward a center of the wafer.

Abstract: In order to efficiently distribute a heat medium at a low heat medium pressure, a heat exchange apparatus includes a heat exchange pipe 2 configured to accommodate a heat medium L to be evaporated by heat absorption from a gas to be cooled, the heat exchange pipe being disposed in an inclined state, a supply pipe 1 configured to supply the heat medium L in a liquid-phase state, the supply pipe being placed in a vicinity of a lower part of the heat exchange pipe 2, a discharge pipe 3 configured to receive a heat medium L to be evaporated in the heat exchange pipe 2 and discharged from an upper part of the heat exchange pipe, and a connecting pipe 4 placed, directing downward, between an upper part of the heat exchange pipe 2 and the discharge pipe 3.

Abstract: When an enclosed space is formed, by at least one of surfaces forming an exterior shape of a shielding member and an intake or exhaust surface among surfaces forming an exterior shape of heat-generating housings, in such a way that a taken-in airflow and an exhausted airflow of the heat-generating housings installed in at least two rows can be separated or substantially separated, a cooling system includes: a duct formed to be able to separate or substantially separate a first airflow and a second airflow being intake/exhaust of a specific heat-generating housing among the heat-generating housings, and heat-generating housings other than the specific heat-generating housing, respectively; and a cooling enhancement unit enhancing cooling for the specific heat-generating housing by acting on the first airflow, thereby avoiding occurrence of a hot spot due to a high-heat-generating housing, in a system building an air-conditioning environment such as aisle capping.

Abstract: A method of manufacturing semiconductor elements includes: disposing a semiconductor layer made of a nitride semiconductor on a first wafer; and bonding a second wafer to the first wafer via the semiconductor layer. The first wafer has an upper surface including a first region and a second region surrounding a periphery of the first region and located lower than the first region. In a top view of the first wafer, a first distance between an edge of the first wafer and the first region of the first wafer in each of a plurality of first directions parallel to respective m-axes of the semiconductor layer is smaller than a second distance between the edge of the first wafer and the first region of the first wafer in each of a plurality of second directions parallel to respective a-axes of the semiconductor layer.

Abstract: A power identification device at least includes a measurement information acquisition unit for acquiring the amount of power generation by a power producer and the amount of power consumption by a consumer respectively as measurement information, a rule management unit for managing a generation rule for generating attribute information, a distribution rule and a loss rule for distributing the attribute information to the consumer, the attribute information containing a primary attribute related to each of the amount of power generation and the amount of power consumption and an additive attribute related to the amount of power generation, an attribute computation unit for generating the attribute information from the measurement information based on the generation rule and distributing the attribute information from the power producer to the consumer based on the distribution rule and the loss rule, and an attribute output (visualization) unit for outputting the attribute information to the outside.

Abstract: A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 ?m higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlzGa1-zN (0.03?z?0.15).

Abstract: A method for manufacturing a semiconductor device includes laminating a plurality of semiconductor wafers via an adhesive, heating such that the adhesive reaches a specific viscosity, and pressing the semiconductor wafers under a provisional pressure bonding load such that a gap between solder of through-electrodes provided to chip parts and through-electrodes of an adjacent semiconductor wafer falls within a specific range that is greater than zero, to produce a provisional pressure-bonded laminate; cutting the provisional pressure-bonded laminate with a cutter to produce a provisional pressure-bonded laminate chip part; and heating the provisional pressure-bonded laminate chip part to at least curing temperature of the adhesive and at least melting point of the solder, and pressing the provisional pressure-bonded laminate chip part under a main pressure bonding load to produce a main pressure-bonded laminate chip part such that the solder comes into contact with the through-electrodes of adjacent chip parts

Abstract: A method for manufacturing a semiconductor device includes laminating a plurality of semiconductor wafers via an adhesive, heating such that the adhesive reaches a specific viscosity, and pressing the semiconductor wafers under a provisional pressure bonding load such that a gap between solder of through-electrodes provided to chip parts and through-electrodes of an adjacent semiconductor wafer falls within a specific range that is greater than zero, to produce a provisional pressure-bonded laminate; cutting the provisional pressure-bonded laminate with a cutter to produce a provisional pressure-bonded laminate chip part; and heating the provisional pressure-bonded laminate chip part to at least curing temperature of the adhesive and at least melting point of the solder, and pressing the provisional pressure-bonded laminate chip part under a main pressure bonding load to produce a main pressure-bonded laminate chip part such that the solder comes into contact with the through-electrodes of adjacent chip parts

Abstract: In a permanent magnet type electric rotating machine, a rotor is arranged in a Halbach array, a main magnet magnetized in the radial direction is formed of a rare-earth magnet and an auxiliary magnet magnetized in the circumferential direction is formed of a ferrite magnet, and a gap is provided between the main magnet and the auxiliary magnet; as a result, the quantity of utilized rare-earth magnets is reduced without the output torque of the electric rotating machine being decreased.

Abstract: A power identification device at least includes a measurement information acquisition unit for acquiring the amount of power generation by a power producer and the amount of power consumption by a consumer respectively as measurement information, a rule management unit for managing a generation rule for generating attribute information, a distribution rule and a loss rule for distributing the attribute information to the consumer, the attribute information containing a primary attribute related to each of the amount of power generation and the amount of power consumption and an additive attribute related to the amount of power generation, an attribute computation unit for generating the attribute information from the measurement information based on the generation rule and distributing the attribute information from the power producer to the consumer based on the distribution rule and the loss rule, and an attribute output (visualization) unit for outputting the attribute information to the outside.

Abstract: A tire testing apparatus includes: a lower rim that is formed with a lower through hole, and a rim-side inclined surface that increases in diameter in a downward direction of an inner peripheral surface of a lower end portion of the lower through hole; an upper rim that is held to face the lower rim; an insertion part capable of being inserted through the lower through hole; and an apparatus-side inclined surface that is provided at a lower end portion of the insertion part, increases in diameter from an outer peripheral surface of the insertion part in the downward direction, and is capable of coming into contact with the rim-side inclined surface.

Abstract: A communication apparatus is provided with: a transmission planned data storage unit in which a plurality of application data, each associated with transmission order information indicating a transmission order and with destination information indicating a destination terminal as a transmission destination are stored; a data aggregation unit that extracts a plurality of application data from the plurality of application data that are associated with mutually identical destination information, that extracts, on the basis of a maximum transmission size indicating an upper-limit value of data size and the transmission order information, a plurality of application data for aggregation from the plurality of extracted application data, and that generates aggregated data to which the identical destination information is allocated, on the basis of the plurality of application data for aggregation; and a data transmission unit that transmits the aggregated data to the destination terminal indicated by the allocated de