Patents by Inventor Yoshinori Naruta

Yoshinori Naruta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8236998
    Abstract: The present invention provides an organic semiconductor material which exhibits a high mobility, and excellent solubility in solvents and oxidation resistance. The present invention also provides an organic semiconductor thin film exhibiting a high mobility, and an organic semiconductor device exhibiting excellent electronic characteristics. A transistor structure is formed by coating the silicon substrate with a thin film of pentacene compound substituted halogens at 6 and 13 positions and aliphatic hydrocarbons at 2, 3, 9 and 10 positions, wherein the substrate is patterned beforehand with gold to have a source and drain electrodes.
    Type: Grant
    Filed: January 5, 2012
    Date of Patent: August 7, 2012
    Assignee: Asahi Kasei Corporation
    Inventors: Kazuto Nagata, Yoshinori Naruta, Masatoshi Yakiyama
  • Publication number: 20120108850
    Abstract: The present invention provides an organic semiconductor material which exhibits a high mobility, and excellent solubility in solvents and oxidation resistance. The present invention also provides an organic semiconductor thin film exhibiting a high mobility, and an organic semiconductor device exhibiting excellent electronic characteristics. A transistor structure is formed by coating the silicon substrate with a thin film of pentacene compound substituted halogens at 6 and 13 positions and aliphatic hydrocarbons at 2, 3, 9 and 10 positions, wherein the substrate is patterned beforehand with gold to have a source and drain electrodes.
    Type: Application
    Filed: January 5, 2012
    Publication date: May 3, 2012
    Inventors: Kazuto NAGATA, Yoshinori Naruta, Masatoshi Yakiyama
  • Patent number: 8110714
    Abstract: The present invention provides an organic semiconductor material which exhibits a high mobility, and excellent solubility in solvents and oxidation resistance. The present invention also provides an organic semiconductor thin film exhibiting a high mobility, and an organic semiconductor device exhibiting excellent electronic characteristics. A transistor structure is formed by coating the silicon substrate with a thin film of pentacene compound substituted halogens at 6 and 13 positions and aliphatic hydrocarbons at 2, 3, 9 and 10 positions, wherein the substrate is patterned beforehand with gold to have a source and drain electrodes.
    Type: Grant
    Filed: February 25, 2005
    Date of Patent: February 7, 2012
    Assignee: Asahi Kasei Corporation
    Inventors: Kazuto Nagata, Yoshinori Naruta, Masatoshi Yakiyama
  • Publication number: 20080061287
    Abstract: The present invention provides an organic semiconductor material which exhibits a high mobility, and excellent solubility in solvents and oxidation resistance. The present invention also provides an organic semiconductor thin film exhibiting a high mobility, and an organic semiconductor device exhibiting excellent electronic characteristics. A transistor structure is formed by coating the silicon substrate with a thin film of pentacene compound substituted halogens at 6 and 13 positions and aliphatic hydrocarbons at 2, 3, 9 and 10 positions, wherein the substrate is patterned beforehand with gold to have a source and drain electrodes.
    Type: Application
    Filed: February 25, 2005
    Publication date: March 13, 2008
    Inventors: Kazuto Nagata, Yoshinori Naruta, Masatoshi Yakiyama