Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

Abstract: An alkaline wet solution for protecting features on a patterned substrate and a substrate processing method using the alkaline wet solution are described. The method includes providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue, performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica, and performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating. The patterned substrate can further include a metallization layer and the alkaline wet solution can further contain 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

Abstract: An alkaline wet solution for protecting features on a patterned substrate and a substrate processing method using the alkaline wet solution are described. The method includes providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue, performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica, and performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating. The patterned substrate can further include a metallization layer and the alkaline wet solution can further contain 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a SiO2 precipitation inhibitor supply unit and a control unit. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor to be mixed into a phosphoric acid processing liquid used in performing an etching processing in a substrate processing tub. The control unit is configured to set a SiO2 precipitation inhibitor concentration contained in the phosphoric acid processing liquid based on a temperature of the phosphoric acid processing liquid, and configured to control a supply amount of the SiO2 precipitation inhibitor to achieve the set SiO2 precipitation inhibitor concentration.

Abstract: A substrate processing apparatus and a substrate processing method capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a substrate processing tub, a phosphoric acid processing liquid supply unit, a circulation path, a SiO2 precipitation inhibitor supply unit and a mixing unit. The phosphoric acid processing liquid supply unit is configured to supply a phosphoric acid processing liquid used in performing an etching processing in the substrate processing tub. The circulation path is configured to circulate the phosphoric acid processing liquid supplied into the substrate processing tub. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor into the circulation path.

Abstract: An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

Abstract: An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.

Abstract: A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.

Abstract: The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.

Abstract: A cleaning liquid used in cleaning of a substrate for use in semiconductor devices conducted after chemical mechanical polishing in manufacture of semiconductor devices, comprising a polycarboxylic acid, an anionic surfactant having an aromatic ring structure in a molecule, a polymer compound having an acidic group on a side chain, and a low molecular weight polyethylene glycol, at the cleaning liquid having a pH of 5 or less, as well as a method of cleaning using the same.

Abstract: A cooling system (10) comprises a first (40) and a second (50) cold storage tank, a first refrigerator (41) cooling water in the first cold storage tank (40), a first thermal load (92) disposed in a first circulating passage (43) extending from the lower to the upper part of the first cold storage (40), a second thermal load (93) warmer than the first thermal load (92) disposed in a second circulating passage (44a) also extending from the lower to the upper part of the first cold storage tank, a second cold storage tank (50) disposed in the second circulating passage, a second refrigerator (51) cooling water fed from the upper part of the second cold storage (50), wherein a cooling output temperature of the second refrigerator (51) is set to be higher than that of the first refrigerator (41).

Abstract: A cleaning agent used after chemical mechanical polishing of a semiconductor device, the cleaning agent including a polycarboxylic acid and diethylenetriamine pentaacetic acid, the semiconductor device including a copper diffusion barrier film and copper wiring on an interlayer dielectric film, and the dielectric film containing SiOC and having a dielectric constant of 3.0 or less.

Abstract: The present invention provides a cleaning agent for cleaning a semiconductor device having copper wiring on the surface thereof following a chemical mechanical polishing process in a production process of a semiconductor device, including a compound represented by the following formula (I): X1-L—X2??formula (I) wherein, in formula (I), X1 and X2 each independently represent a monovalent substituent formed by removing one hydrogen atom from a heterocycle containing at least one nitrogen atom, and L represents a divalent linking group; and provides a cleaning method using the cleaning agent.

Abstract: A cleaning liquid used in cleaning of a substrate for use in semiconductor devices conducted after chemical mechanical polishing in manufacture of semiconductor devices, comprising a polycarboxylic acid, an anionic surfactant having an aromatic ring structure in a molecule, a polymer compound having an acidic group on a side chain, and a low molecular weight polyethylene glycol, at the cleaning liquid having a pH of 5 or less, as well as a method of cleaning using the same.

Abstract: A cooling system (10) comprises a first (40) and a second (50) cold storage tank, a first refrigerator (41) cooling water in the first cold storage tank (40), a first thermal load (92) disposed in a first circulating passage (43) extending from the lower to the upper part of the first cold storage (40), a second thermal load (93) warmer than the first thermal load (92) disposed in a second circulating passage (44a) also extending from the lower to the upper part of the first cold storage tank, a second cold storage tank (50) disposed in the second circulating passage, a second refrigerator (51) cooling water fed from the upper part of the second cold storage (50), wherein a cooling output temperature of the second refrigerator (51) is set to be higher than that of the first refrigerator (41).

Abstract: A cleaning solution for a substrate for use in a semiconductor device, which is used after a chemical mechanical polishing process in a semiconductor device production process, the cleaning solution containing a nonionic surfactant represented by the following formula (I), an organic acid, and a polyethylene glycol having a number average molecular weight of 5000 or less, wherein the pH of the cleaning solution 5 or less, as well as a cleaning method using the cleaning solution. In the formula (I), R1 to R6 each independently represent a hydrogen atom or alkyl group having 1 to 10 carbon atoms, X and Y each independently represent an ethyleneoxy group or propyleneoxy group, and m and n each independently represent an integer from 0 to 20.

Abstract: The invention provides a cleaning solution for use in cleaning a substrate for semiconductor device use after a chemical mechanical polishing process has been carried out in production of a semiconductor device. The cleaning solution contains a compound represented by the following formula (I) and an organic acid. In formula (1), R represents a hydrocarbon group, and n and m each independently represent an integer of 2 or more.

Abstract: The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.