Abstract: An electrophotography developing apparatus has been developed which can protect a developer holder and a layer thickness control member from damage. The device also prevents internal scattering of the developer while preventing a surplus supply of the developer to both ends on the peripheral surface of the developer holder. The unique advantages of the invention are derived through the utilization of sealing members having different elastic properties, which assume both bulk removal of excess developer while providing the needed uniform developer thickness. Another embodiment of the invention has the width of the layer thickness control member in a longitudinal direction set wider than the width of the developer holder in a longitudinal direction, and both side edges of the layer thickness control member are positioned outside both side edges of the developer holder.

Abstract: A plan or vertical type thin film magnetic head is produced by a process comprising the steps of: forming a gap separator layer of a non-magnetic material on the surface of a substrate, while the forming process is not limited to plating; forming a mask layer on the gap layer; patterning the mask layer to form a shield; etching the gap layer, while the shield functions as a mask, thereby forming a gap wall having a width narrower than that of the shield independent of the resolution degree of the resist; forming a magnetic pole layer of a soft magnetic material on the surface of the substrate by exposing the resist at a time, thereby the formed magnetic pole layer being separated by the gap wall; and, utilizing the gap wall as a magnetic pole gap of the magnetic pole layer.

Abstract: A magnetic recording medium having magnetic patterns into which servo information are written and a magnetic recording layer into which data are written comprises a nonmagnetic substrate, a magnetic recording layer formed on the substrate, and a hard magnetic layer contacted the magnetic recording layer within servo signal recording regions on the substrate and constituting servo patterns of film thicknesses of which are varied in the track length direction. Thereby, more precise reading of the servo signals by the magnetic head is assured and a surface of the magnetic recording medium can be flatted.

Abstract: A semiconductor type yaw rate sensor has a substrate, a beam structure formed from a semiconductor material and having at least one anchor portion disposed on the substrate, a weighted portion located above the substrate a predetermined gap therefrom, and a beam portion which extends from the anchor portion and supports the weighted portion. A movable electrode is formed onto the weighted portion, and a fixed electrode is formed on the substrate in such a manner that the fixed electrode faces the movable electrode. When a drive voltage is applied between the movable electrode and the fixed electrode, the beam structure is forcibly caused to vibrate in a direction that is horizontal relative to a substrate surface plane. In this yaw rate sensor, a strain gauge to monitor forced vibration of the beam structure is formed in the beam portion. As a result, the forced vibration of the beam structure can be monitored with a simple structure.

Abstract: A magnetoresistive head includes a magnetoresistive element set back from the front end face of the head confronting a record medium for converting changes in a signal magnetic field leaking out from the record track of the record medium into changes in resistance. The magnetoresistive element is connected to a pair of terminals and a sense region is defined between both the terminals. The magnetoresistive element is magnetically coupled to a front flux guide, one end of which is exposed in the front end face of the head, at the other end of the same. The front flux guide is virtually in the form of a rectangle elongated in the direction of the width of the record track of the record medium so as to exceed the sense region of the magnetoresistive element.

Abstract: A process for sterilizing a container holding a fluid diet, the container having a long and slender mouth and being filled with the fluid diet and sealed; the process includes the steps of filling the container with the fluid diet in a heated state, sealing the container at the mouth thereof, and thereafter turning the container with its mouth side down to immerse only the mouth and the vicinity thereof in a hot-water bath for a period of time sufficient to achieve sterilization. An apparatus for carrying out the process includes a bucket conveyor, a feed conveyor, a bucket and a bath. The process and apparatus can well sterilize containers holding a fluid diet and having a long and slender mouth. The process and apparatus can well sterilize containers holding a fluid diet and having a long and slender mouth.

Abstract: A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.

Abstract: An acceleration sensor is constructed by a substrate, a cylindrical dead-weight movable electrode to be displaced by acceleration, a fixed electrode from the inside of which a cylinder is hollowed, a cylindrical anchor arranged on the substrate for supporting the dead-weight movable electrode with elastic transformable structural material and beams. When acceleration is applied from the outside, the cylindrical detecting face of the dead-weight movable electrode and the cylindrical detected face of the fixed electrode are in contact on a two-dimensional plane parallel to the substrate and the acceleration sensor detects the contact. A radial interval between the detecting face of the dead-weight movable electrode and the detected face of the fixed electrode is set in view of the elastic modulus of the beams so that external force can be detected isotropically and the acceleration sensor detects acceleration on a two-dimensional plane nondirectionally.

Abstract: A spin valve magnetoresistive head comprises a first spin valve device having a first magnetization free layer and a first magnetization pinning layer via a first non-magnetic intermediate layer, a second spin valve device having a second magnetization free layer and a second magnetization pinning layer via a second non-magnetic intermediate layer, whereby the first and second magnetization pinning layers are magnetized in anti-parallel to each other and the first and second magnetization free layers are magnetized rotatably based on an external magnetic field.

Abstract: A thin film inductive head for use in writing/reading magnetic signals in a magnetic disk drive or a magnetic tape unit, comprises two magnetic cores formed of respective magnetic layers, said two magnetic layers putting conductor coils therebetween in a vertical direction, front end portions thereof opposing to each other via a gap layer, a part of said front end portion of one magnetic layer having high saturation magnetic flux density rather than a remaining part thereof.

Abstract: A magnetoresistive head comprises a magnetoresistive layer having an axis of easy magnetization in the direction parallel to an air bearing surface, a first electrode formed on the magnetoresistive layer on the air bearing surface side and an oblique side portion with respect to the air bearing surface, and a second electrode formed to be separated at a distance from the first electrode and having a side portion substantially parallel to the oblique side portion of the first electrode on the magnetoresistive layer.

Abstract: A magnetic memory device comprises: a vertically magnetic recording medium; a probe formed of an electrically conductive as well as soft-magnetic material, a pointed end of the probe faces the magnetically recording medium across a gap; a magnetic flux detecting element for detecting a magnetic flux caught by the probe, where the magnetic flux is from a data recorded on the magnetically recording medium; a vertical controller for keeping the gap constant by the use of a tunnel current flowing via said gap into the probe while a voltage is applied across the gap; and a scan mechanism for scanning the probe along the magnetically recording medium. The magnetic memory device may further comprises an exciting coil for magnetizing the probe so as to write a data in the magnetically recording medium. The probe may be recessed from the scanning position when the probe is not in operation.

Abstract: A magnetic detection device including at least one oscillator circuit having a magnetoresistance element which converts a change of magnetism detected into a digital signal and a comparator for comparing the digitalized oscillating frequency of the oscillator circuit with another digitalized oscillating frequency generated from another oscillating circuit by taking a ratio thereof or by detecting a phase difference between the pulse signals. Utilizing the magnetic detection device, the amount of change of magnetism can be stably detected with a high accuracy within a wide range of ambient usage temperatures. The physical quantity detection device includes a magnetic detection device which can detect any physical quantity with a high accuracy.

Abstract: An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion.

Abstract: Adverse effects due to electrostatic force between a semiconductor substrate and a movable electrode are avoided with a new structure. A movable electrode of beam structure is disposed at a specified interval above a p-type silicon substrate. Fixed electrodes, each composed of an impurity diffusion layer, are disposed on both sides of the movable electrode on the p-type silicon substrate; these fixed electrodes are self-aligningly with respect to the movable electrode. The movable electrode is displaced in accompaniment to the action of acceleration, and acceleration is detected by change (fluctuation) in current between the fixed electrodes generated by means of this displacement. Additionally, an electrode for movable electrode upward-movement use is disposed above the movable electrode, a potential difference is given between the movable electrode and the electrode for movable electrode upward-movement use, and attractive force of the movable electrode to the silicon substrate is alleviated.

Abstract: A pulse phase difference encoding circuit provides a digital signal indicating a phase difference between a first input pulse and a second input pulse. The first input pulse is provided to and circulated in a ring signal delay circuit having a plurality of signal delay elements that are connected in series. Intermediate points between the delay elements provide delayed pulses having different delay times. Upon receiving the second input pulse, a selector selects one delay pulse provided by the delay element at which the first input pulse has arrived, and generates a digital positional signal indicating a position of the selected delay element. The number of rounds of circulation of the first input pulse in the ring signal delay circuit is separately counted. According to the number of rounds of circulation of the first pulse and the positional signal, the digital signal indicating the phase difference between the first and second input pulses is formed.

Abstract: A ring oscillator for circulating pulse edges of two types therein includes an even number of inverting circuits connected in a ring. Each of the inverting circuits is operative to invert an input signal and output an inversion of the input signal. One of the inverting circuits is a first start inverting circuit which starts an operation of inverting an input signal in response to a first control signal applied from an external input. One of the inverting circuits except the first start inverting circuit and an inverting circuit immediately following the first start inverting circuit is a second start inverting circuit which starts an operation of inverting an input signal in response to a second control signal.

Abstract: This invention aims at providing a novel semiconductor accelerometer comprising a smaller number of substrates and a production method thereof.An insulating film is formed on a main plane of a P-type silicon substrate, and a beam-like movable electrode is formed on the insulating film. Fixed electrodes are then formed on both sides of the movable electrode in self-alignment with the movable electrode by diffusing an impurity into the P-type silicon substrate, and the insulating film below the movable electrode is etched and removed. There is thus produced a semiconductor accelerometer comprising the P-type silicon substrate 1, the movable electrode 4 having the beam structure and disposed above the P-type silicon substrate 1 with a predetermined gap between them, and the fixed electrodes 8, 9 consisting of the impurity diffusion layer and formed on both sides of the movable electrode 4 on the P-type silicon substrate 1 in self-alignment with the movable electrode 4.

Abstract: A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.

Abstract: A digitally controllable oscillator is provided with a variable-frequency ring oscillator including an odd number of inverting circuits connected together in a ring formation. The oscillator has a pulse circulation device to circulate a pulse signal through the inverters to introduce some delay in the signal. Digital data is produced by a data controller device. A counter is connected to the pulse circulation device and counts the number of times the pulse signal circulates through the inverters. A pulse is generated at a desired frequency based upon the counter's output and the introduced delay. A control device determines which of a plurality of delay signals is applied to the circuit that generates the pulse at the desired frequency.