Abstract: A lead frame includes: a die pad having a mounting surface for a semiconductor element; a recess included on the mounting surface; and a lead disposed around the die pad. The recess includes: a bottom surface positioned at a depth less than a thickness of the die pad from an opening plane of the recess; a plurality of protrusions protruding from the bottom surface; and a concavity recessed from the bottom surface.

Abstract: A lead frame includes: a die pad having a mounting surface for a semiconductor element; a recess included on the mounting surface; and a lead disposed around the die pad. The recess includes: a bottom surface positioned at a depth less than a thickness of the die pad from an opening plane of the recess; a plurality of protrusions protruding from the bottom surface; and a concavity recessed from the bottom surface.

Abstract: A lead frame includes an outer frame. The outer frame includes: an upper surface; a lower surface that is opposite to the upper surface; a side surface between the upper surface and the lower surface; a first recess that is formed to extend from the upper surface to the side surface; a second recess that is formed to extend from the lower surface to the side surface; and a curved surface that is positioned between the side surface and a side wall of the first recess or between the side surface and a side wall of the second recess.

Abstract: A lead frame includes an outer frame. The outer frame includes: one surface; another surface that is opposite to the one surface; a side surface between the one surface and the other surface; a recess that is formed to extend from the one surface to the side surface; and a notch step portion that is formed to extend from the other surface to the side surface.

Abstract: A lead frame includes an outer frame. The outer frame includes: an upper surface; a lower surface that is opposite to the upper surface; a side surface between the upper surface and the lower surface; a first recess that is formed to extend from the upper surface to the side surface; a second recess that is formed to extend from the lower surface to the side surface; and a curved surface that is positioned between the side surface and a side wall of the first recess or between the side surface and a side wall of the second recess.

Abstract: A lead frame includes an outer frame. The outer frame includes: one surface; another surface that is opposite to the one surface; a side surface between the one surface and the other surface; a recess that is formed to extend from the one surface to the side surface; and a notch step portion that is formed to extend from the other surface to the side surface.

Abstract: A semiconductor device comprises a semiconductor element having a signal electrode and a ground electrode. A mounting part metallic film has a bottom area on which the semiconductor element is mounted and a stepped area located at a periphery of the bottom area and being higher in horizontal level than the bottom area. A connector part metallic film is spaced from the mounting part metallic film and arranged at a peripheral region thereof. The signal electrode of the semiconductor element is electrically connected to the connector part metallic film and the ground electrode of the semiconductor element is electrically connected to the stepped area of the mounting part metallic film. The semiconductor element is shielded with resin together with mounting/connecting sides of the mounting part metallic film and the connector part metallic film.

Abstract: An optical element is composed of a single crystal of strontium barium niobate doped with a transition metal element such as cerium, vanadium or uranium. This element has the property of undergoing very sensitively a change in its refractive index by the application of a beam of light of specific wavelength.

Abstract: Infrared-infrared phosphors having a composition represented by the general formulaAB.sub.1-x-y Nd.sub.x Yb.sub.y P.sub.4 O.sub.12wherein A is at least one element selected from the group consisting of Na, K, Rb and Cs, B is at least one element selected from the group consisting of Sc, Y, La, Ce, Gd, Lu, Ga, In, Bi and Sb, and x and y are numbers satisfying the conditions0.05.ltoreq.x.ltoreq.1.00.ltoreq.y.ltoreq.0.95x+y.ltoreq.1.0can be produced in the form of very fine particles and in a high yield by carrying out firing in the presence of a melt comprising a compound of the formulaAPO.sub.3wherein A is as defined above, and in such a specific composition and such a specific temperature range as said phosphor may be crystallized out.

Abstract: In a process of preparing single crystals of strontium barium niobate of the type wherein melt of a mixture of strontium oxide, barium oxide and niobium pentoxide is prepared and a single crystal of strontium barium niobate is grown from the melt by using a seed crystal, the compositions included in region A or B shown in FIGS. 2 and 3 are used as the ternary compositions of strontium oxide, barium oxide and niobium pentoxide in the melt.

Abstract: A method of manufacturing large ferroelectric crystals having desirable uniform characteristics throughout the crystal from heterogeneous ferroelectric crystals in which only natural faces having the lowest surface energy are allowed to grow while preventing other faces from growing, or the heterogeneous ferroelectric crystals are subjected to a heat treatment so that the entire crystal comes to have the desirable characteristics.

Abstract: A device for modulating and a nondestructive readout storage device employing modulation of light transmitted through an irregular ferroelectric crystal before and after the rotation of the vibration plane thereof caused by an applied electric field equal to or larger than the coercive field thereof.