Abstract: The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film.

Abstract: Provided are novel plasma-assisted processes for preparing cured films having excellent heat resistance and moisture resistance. A process for preparing a cured film, comprising at least: applying a composition containing (A) at least one conductive polymer precursor on a substrate to form a coating layer, and irradiating the coating layer with a plasma to polymerize the conductive polymer precursor (A).

Abstract: The invention provides an oxo-titanylphthalocyanine crystal which is stable, is superior in dispersibility in a photoreceptive layer and efficiently contributes to improvements in sensitivity and charge retention rate of an electrophotographic photoreceptor when it is used as a charge generating agent, a method for producing the oxo-titanylphthalocyanine crystal, and an electrophotographic photoreceptor.

Abstract: The present invention provides an electrophotographic photoreceptor comprising a photosensitive layer that contains at least a charge generating agent, a hole transport agent and a prede mulas (A) and (B). The electrophotographic photoreceptor prevents image defect termined additive. The hole transport agent satisfies the following for from occurring and can meet the demand for higher speed image forming apparatuses, by reducing the adhesion of paper dust and preventing the occurrence of cracks. ? ? M < 1.2 × 10 - 8 ( A ) ? ? > 5.

Abstract: A producing method of a plasma polymerized film includes irradiating a composition containing at least one kind of radically polymerizable compound, and at least one of a polymerization initiator and a chain transfer agent with plasma. The plasma polymerized film is formed by polymerizing a composition containing at least one of a polymerization initiator and a chain transfer agent, and at least one kind of radically polymerizable compound by irradiation of plasma.

Abstract: An oxygen permeability measuring apparatus for measuring an oxygen permeation rate of oxygen barrier film in a dark room is provided. A container is charged with inert gas, and sealed hermetically by use of the oxygen barrier film at least partially. A chemiluminescent compound is contained in the container, for emitting light by oxidation with the oxygen. A photon detector detects photons emitted by the chemiluminescent compound so as to determine an amount of the oxygen permeated through the oxygen barrier film. Preferably, the container includes a container body. An opening is formed in the container body, and closed hermetically by the oxygen barrier film attached thereto. The photon detector is disposed inside or outside the container. The oxygen permeation rate is equal to or less than 10?2 cc/m2·day·atm. The chemiluminescent compound includes tetrakis(dimethylamino)ethylene.

Abstract: A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: The present invention provides a color tone variable film which is formed by a reaction of a cationic polymer containing a structural unit containing a positive ionic group in a side chain and a compound containing an acid group and a partial structure which can change color tone as a result of energy application, which can be formed by a wet method, which has flexibility and strength in practical use, and which changes color tone with high sensitivity as a result of energy application, a simple manufacturing method thereof, and an electrochromic element obtained by the manufacturing method.

Abstract: The invention provides an oxo-titanylphthalocyanine crystal which is stable, is superior in dispersibility in a photoreceptive layer and efficiently contributes to improvements in sensitivity and charge retention rate of an electophotographic photoreceptor when it is used as a charge generating agent, a method for producing the oxo-titanylphthalocyanine crystal, and an electrophotographic photoreceptor the oxo-titanylphthalocyanine crystal has predetermined optical characteristics and thermal properties and is produced by a production method including the following steps (a) to (d): (a) a step of dissolving a crude oxo-titanylphthalocyanine crystal in an acid to obtain an oxo-titanylphthalocyanine solution; (b) a step of adding the oxo-titanylphthalocyanine solution dropwise in a poor solvent to obtain a wet cake; (c) a step of washing the wet cake with an alcohol having 1 to 4 carbon atoms; and (d) a step of stirring the washed wet cake under heating in a nonaqueous solvent to obtain an oxo-titanylphthalocya

Abstract: A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment.

Abstract: The present invention provides a charge transport film which is prepared through subjecting a coating film including at least one charge transporting agent to an atmospheric pressure plasma treatment, wherein electron transfer between the charge transport film and a substance that contacts with the charge transport film is promoted, and deterioration in performance due to diffusion and mixing or crystallization of low molecular weight components, such as a charge transporting agent, incorporated in a cured film is suppressed also in the case of film formation by a wet method, and which exhibits excellent charge transportability and stability over time; a production method with good productivity; and a light-emitting element and photoelectric conversion element equipped with the charge transport film, the atmospheric pressure plasma treatment being preferably a treatment that applies plasma, which is generated using a plasma generating apparatus and conveyed using an inert gas, to the coating film.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: The invention provides an oxo-titanylphthalocyanine crystal which is stable, is superior in dispersibility in a photoreceptive layer and efficiently contributes to improvements in sensitivity and charge retention rate of an electrophotographic photoreceptor when it is used as a charge generating agent, a method for producing the oxo-titanylphthalocyanine crystal, and an electrophotographic photoreceptor.

Abstract: A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.

Abstract: A thin film transistor having a crystalline silicon film that is formed over an insulating substrate with a gate electrode and a gate insulating film in between, and has a channel region in a region corresponding to the gate electrode; an insulating channel protective film that is selectively formed in a region corresponding to the channel region on the crystalline silicon film; an n+ silicon film having a source region and a drain region that sandwich a region corresponding to the channel region on the channel protective film and the crystalline silicon film; and a metal film having a source electrode and a drain electrode that respectively correspond to the source region and the drain region.

Abstract: A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption layer (19) is formed thereon through a buffer layer (17). Energy lines Lh are applied to the light absorption layer (19) from a continuous-wave laser such as a semiconductor laser. This oxidizes only a surface side of the light absorption layer Lh and produces a beautiful crystalline silicon film (15a) obtained by crystallizing the amorphous silicon film (15) using heat generated by thermal conversion of the energy lines Lh at the light absorption layer (19) and heat of the oxidation reaction. This provides a method for crystallizing a thin film with good controllability at low costs achieved with simpler process.

Abstract: The objective is to present compositions obtained by supporting by polymers micro clusters of transition metals and the like that are useful as catalysts in various reactions and, once used, are readily recovered and reused. A polymer-supported metal cluster composition is obtained by supporting a transition metal by a cross-linked polymer, and the polymer-supported cluster composition is characterized by the cross-linked polymer obtained by cross-linking of a cross-linkable polymer containing a hydrophilic side chain and a hydrophobic side chain group having a cross-linkable functional group. This polymer-supported metal cluster composition is, for example, preferably formed by first forming a micelle composed of the metal clusters supported by the cross-linkable polymer in a suitable solution and subsequently subjecting the cross-linkable polymer to a cross-linking reaction.

Abstract: An oxygen permeability measuring apparatus for measuring an oxygen permeation rate of oxygen barrier film in a dark room is provided. A container is charged with inert gas, and sealed hermetically by use of the oxygen barrier film at least partially. A chemiluminescent compound is contained in the container, for emitting light by oxidation with the oxygen. A photon detector detects photons emitted by the chemiluminescent compound so as to determine an amount of the oxygen permeated through the oxygen barrier film. Preferably, the container includes a container body. An opening is formed in the container body, and closed hermetically by the oxygen barrier film attached thereto. The photon detector is disposed inside or outside the container. The oxygen permeation rate is equal to or less than 10?2 cc/m2·day·atm. The chemiluminescent compound includes tetrakis(dimethylamino)ethylene.

Abstract: The present invention provides a color tone variable film which is formed by a reaction of a cationic polymer containing a structural unit containing a positive ionic group in a side chain and a compound containing an acid group and a partial structure which can change color tone as a result of energy application, which can be formed by a wet method, which has flexibility and strength in practical use, and which changes color tone with high sensitivity as a result of energy application, a simple manufacturing method thereof, and an electrochromic element obtained by the manufacturing method.