Patents by Inventor Yoshio Ishikawa
Yoshio Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10950452Abstract: A time required to return an inside of the chamber after performing maintenance of the inside of the chamber into a state prior to the maintenance can be shortened. A seasoning method includes a first dry cleaning process of cleaning the inside of the chamber by supplying an O2 gas into the chamber and generating plasma of the O2 gas within the chamber; and a second dry cleaning process of seasoning, after the first dry cleaning process, the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber.Type: GrantFiled: August 25, 2016Date of Patent: March 16, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshio Ishikawa, Takashi Enomoto, Yutaka Osada
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Patent number: 10818502Abstract: Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (RF) power source configured to couple RF power to a top portion of the process chamber, a second RF power source configured to couple RF power to the holder, and a direct current (DC) power supply. Initially, a process gas for plasma process is flowed into the process chamber. The process gas is ignited to form plasma by activating the second RF power source to apply RF power to the holder. Subsequently, the microelectronic workpiece is clamped to the holder by applying the positive voltage to the holder with the DC power supply, and the first RF power source is activated to maintain the plasma within the process chamber.Type: GrantFiled: November 20, 2017Date of Patent: October 27, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Sergey Voronin, Jason Marion, Yusuke Yoshida, Alok Ranjan, Takashi Enomoto, Yoshio Ishikawa
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Publication number: 20180144946Abstract: Systems and methods are disclosed for plasma discharge ignition to reduce surface particles and thereby decrease defects introduced during plasma processing. A microelectronic workpiece is positioned on a holder within a process chamber that includes a first radio frequency (RF) power source configured to couple RF power to a top portion of the process chamber, a second RF power source configured to couple RF power to the holder, and a direct current (DC) power supply. Initially, a process gas for plasma process is flowed into the process chamber. The process gas is ignited to form plasma by activating the second RF power source to apply RF power to the holder. Subsequently, the microelectronic workpiece is clamped to the holder by applying the positive voltage to the holder with the DC power supply, and the first RF power source is activated to maintain the plasma within the process chamber.Type: ApplicationFiled: November 20, 2017Publication date: May 24, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Sergey Voronin, Jason Marion, Yusuke Yoshida, Alok Ranjan, Takashi Enomoto, Yoshio Ishikawa
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Patent number: 9623848Abstract: Some embodiments are directed to a duct assembly for cooling a brake assembly of a vehicle. The duct assembly can include a hollow inlet section that is disposed at the vehicle sub-frame and configured to capture air from beneath the vehicle sub-frame; and a hollow intermediate section that communicates with the inlet section so as to form a contiguous channel therewith. The intermediate section can be disposed entirely within the vehicle sub-frame. A hollow outlet section can communicate with the intermediate section so as to form a contiguous channel between the inlet, intermediate and outlet sections. The outlet section can be disposed and configured to direct the air captured by the inlet section to the front end of the brake assembly to thereby cool at least a portion of the brake assembly.Type: GrantFiled: August 18, 2015Date of Patent: April 18, 2017Assignee: HONDA MOTOR CO., LTD.Inventors: Scott Andrew Paul, Stephen G. Rosepiler, Lorne R. Dyar, Yoshio Ishikawa, Matthew Vernon Roehl, Yuichiro Akita, Akihiko Koike, Edward C. Smith
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Publication number: 20170062227Abstract: A time required to return an inside of the chamber after performing maintenance of the inside of the chamber into a state prior to the maintenance can be shortened. A seasoning method includes a first dry cleaning process of cleaning the inside of the chamber by supplying an O2 gas into the chamber and generating plasma of the O2 gas within the chamber; and a second dry cleaning process of seasoning, after the first dry cleaning process, the inside of the chamber by supplying a processing gas containing fluorine into the chamber and generating plasma of the processing gas within the chamber.Type: ApplicationFiled: August 25, 2016Publication date: March 2, 2017Inventors: Yoshio Ishikawa, Takashi Enomoto, Yutaka Osada
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Publication number: 20170050624Abstract: Some embodiments are directed to a duct assembly for cooling a brake assembly of a vehicle. The duct assembly can include a hollow inlet section that is disposed at the vehicle sub-frame and configured to capture air from beneath the vehicle sub-frame; and a hollow intermediate section that communicates with the inlet section so as to form a contiguous channel therewith. The intermediate section can be disposed entirely within the vehicle sub-frame. A hollow outlet section can communicate with the intermediate section so as to form a contiguous channel between the inlet, intermediate and outlet sections. The outlet section can be disposed and configured to direct the air captured by the inlet section to the front end of the brake assembly to thereby cool at least a portion of the brake assembly.Type: ApplicationFiled: August 18, 2015Publication date: February 23, 2017Inventors: Scott Andrew PAUL, Stephen G. ROSEPILER, Lorne R. DYAR, Yoshio ISHIKAWA, Matthew Vernon ROEHL, Yuichiro AKITA, Akihiko KOIKE, Edward C. SMITH
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Patent number: 9530626Abstract: A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced.Type: GrantFiled: July 23, 2015Date of Patent: December 27, 2016Assignee: TOKYO ELECTRON LIMITEDInventors: Jason Marion, Sonam Sherpa, Sergey A. Voronin, Alok Ranjan, Yoshio Ishikawa, Takashi Enomoto
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Patent number: 9371100Abstract: Provided are a vehicle body assembling method and a vehicle body assembling device that are space-saving and economical. The vehicle body assembling method includes: a first holding step (S2) for holding a floor complete 1 by a first jig 9; a second holding step (S3) for holding a roof arch by a second jig; a jig connecting step (S4) for connecting the first jig and the second jig; a third holding step (S5) for holding side inner completes by the first jig and the second jig; and welding steps (S6 to S9) for forming an inner frame by welding.Type: GrantFiled: February 21, 2013Date of Patent: June 21, 2016Assignee: HONDA MOTOR CO., LTD.Inventors: Akio Fujisaki, Hideto Kojima, Yoshio Ishikawa, Yoshitaka Matsukami
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Publication number: 20160027620Abstract: A plasma processing method and apparatus are provided in which current spikes associated with application of a voltage to an electrostatic chuck (ESC) are minimized or reduced when the processing plasma is present. According to an example, the voltage is applied to the ESC after the processing plasma is struck, however the voltage is ramped or increased in a step-wise manner to achieve the desired final ESC voltage. In an alternate embodiment, the ESC voltage is at least partially applied before striking of the plasma for processing the wafer. By reducing current spikes associated with application of the voltage to the ESC during the presence of the processing plasma, transfer or deposition of particles on the wafer can be reduced.Type: ApplicationFiled: July 23, 2015Publication date: January 28, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Jason MARION, Sonam SHERPA, Sergey A. VORONIN, Alok RANJAN, Yoshio ISHIKAWA, Takashi ENOMOTO
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Publication number: 20150311045Abstract: A dry cleaning method is provided that is implemented by a plasma processing apparatus including a processing chamber having a member containing chromium, a mounting table arranged within the processing chamber and configured to hold a substrate, and a gas supply source configured to supply gas into the processing chamber. The dry cleaning method includes a first process step of supplying a first cleaning gas containing oxygen into the processing chamber, supplying a high frequency power or a microwave power into the processing chamber, and generating a plasma from the first cleaning gas; and a second process step of supplying a second cleaning gas containing bromine into the processing chamber after the first process step.Type: ApplicationFiled: April 21, 2015Publication date: October 29, 2015Inventors: Yoshio ISHIKAWA, Jun GAO, Hidemasa KAINO
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Publication number: 20150102089Abstract: Provided are a vehicle body assembling method and a vehicle body assembling device that are space-saving and economical. The vehicle body assembling method includes: a first holding step (S2) for holding a floor complete 1 by a first jig 9; a second holding step (S3) for holding a roof arch by a second jig; a jig connecting step (S4) for connecting the first jig and the second jig; a third holding step (S5) for holding side inner completes by the first jig and the second jig; and welding steps (S6 to S9) for forming an inner frame by welding.Type: ApplicationFiled: February 21, 2013Publication date: April 16, 2015Inventors: Akio Fujisaki, Hideto Kojima, Yoshio Ishikawa, Yoshitaka Matsukami
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Publication number: 20110022228Abstract: A door removing system which occupies less space, reduces costs, and reduces cycle time. A door removing system (1) removes from an automobile body (10) a door (11) fixed to the body (10) by bolts (12). The door removing system (1) is provided with a double-arm robot (20) for holding the door (11) in the vertical direction, a single-arm robot (30) for removing the bolts (12), and a controlling device for controlling the robots. The controlling device holds the door (11) in the vertical direction by a pair of manipulators (22A, 22B) of the double-arm robot (20), removes the bolts (12) by the single-arm robot (30) with the door (11) held by the manipulators, and then transfers the door (11) by the double-arm robot (20).Type: ApplicationFiled: February 16, 2009Publication date: January 27, 2011Applicant: HONDA MOTOR CO., LTD.Inventors: Atsushi Mikurube, Takao Shibayama, Kenichi Asamizu, Taketo Ishida, Yoshio Ishikawa, Mitsuo Maeda
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Patent number: 7253115Abstract: A dual damascene trench etching process includes a two-step BARC etching process, a first BARC etch step using a fluorocarbon-based plasma, and a second BARC etch step using an O2/N2-based plasma. The first BARC etch step removes a first portion of the BARC covering a dielectric stack using a fluorocarbon-based plasma. The second BARC etch step removes a second portion of the BARC covering the dielectric stack using a O2/N2 based plasma. The dual damascene trench etching process may further include a BARC etch back process to remove a further portion of the BARC not covering the dielectric stack. The dual damascene trench etching process further includes a low-k dielectric etching process that etches trenches in a low-k dielectric layer in the dielectric stack and that avoids the use of argon in order to prevent facet formation.Type: GrantFiled: February 6, 2003Date of Patent: August 7, 2007Assignee: Applied Materials, Inc.Inventors: Hiroya Tanaka, Chee Khiang Ivan Sim, Alok Jain, Yoshio Ishikawa
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Patent number: 6800213Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.Type: GrantFiled: June 7, 2002Date of Patent: October 5, 2004Inventors: Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert W. Wu, Hoiman (Raymond) Hung
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Publication number: 20040192051Abstract: A method of forming a damascene structure including an insulator portion having a barrier layer comprising silicon carbide (SiC) or silicon carbon nitride (SiCN) on a metal wiring layer formed on a substrate. The method includes the steps of supplying a gas mixture comprising trifluoromethane (CHF3) to a chamber accommodating the substrate and generating a plasma in the chamber, thereby forming a via hole communicating with the metal wiring layer through the first layer containing silicon carbide (SiC) or silicon carbon nitride (SiCN).Type: ApplicationFiled: October 30, 2003Publication date: September 30, 2004Applicant: Applied Materials, Inc.Inventors: Hiroya Tanaka, Yoshio Ishikawa, Keiji Horioka, Yuzuru Ueda, Hidetaka Oshio
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Publication number: 20040157460Abstract: A dual damascene trench etching process includes a two-step BARC etching process, a first BARC etch step using a fluorocarbon-based plasma, and a second BARC etch step using an O2/N2-based plasma. The first BARC etch step removes a first portion of the BARC covering a dielectric stack using a fluorocarbon-based plasma. The second BARC etch step removes a second portion of the BARC covering the dielectric stack using a O2/N2 based plasma. The dual damascene trench etching process may further include a BARC etch back process to remove a further portion of the BARC not covering the dielectric stack. The dual damascene trench etching process further includes a low-k dielectric etching process that etches trenches in a low-k dielectric layer in the dielectric stack and that avoids the use of argon in order to prevent facet formation.Type: ApplicationFiled: February 6, 2003Publication date: August 12, 2004Applicant: Applied Materials, Inc.Inventors: Hiroya Tanaka, Chee Khiang Ivan Sim, Alok Jain, Yoshio Ishikawa
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Patent number: 6553112Abstract: A signal receiving unit receives call information (termination trunk number) of a termination call, a user number, and so forth from an originator. Thereafter, the signal receiving unit transfers the termination call to an operator unit through a PBX. The operator unit receives the call information of the transfer call and inquires of the signal receiving unit about the user number and so forth with a key of the call information. In addition, the operator unit searches user information with a key of the user number from a database and displays the searched result. Even if the PBX is using an ACD function or the like, user identification information received by the signal receiving unit can be sent to the operator unit as a transfer destination.Type: GrantFiled: March 11, 1998Date of Patent: April 22, 2003Assignee: Fujitsu LimitedInventor: Yoshio Ishikawa
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Publication number: 20030036287Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2, preferably C4F6, an oxygen-containing gas such as O2 or CO, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.Type: ApplicationFiled: June 7, 2002Publication date: February 20, 2003Inventors: Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert W. Wu, Hoiman Raymond Hung
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Patent number: 6461533Abstract: A method of etching silicon oxide with high selectivity to a photoresist mask and to a silicon-containing substrate comprising exposing the silicon oxide to a plasma of a precursor etch gas of a fluorocarbon and an organic silane containing at least one organic group. When at least about 10% by weight of the silane is present in the etch gas, the selectivity between the silicon oxide and the photoresist mask layer, and between the silicon oxide and the silicon-containing substrate, increases markedly. High aspect ratio, submicron size openings can be etched.Type: GrantFiled: June 4, 1998Date of Patent: October 8, 2002Assignee: Applied Materials Inc.Inventors: Yasuhiro Horiike, Yoshio Ishikawa, Keiji Horioka
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Patent number: 6432318Abstract: An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C4F6 or C5F8, an oxygen-containing gas such as O2, CO or CO2, a lighter fluorocarbon or hydrofluorocarbon, and a noble diluent gas such as Ar or Xe. The amounts of the first three gases are chosen such that the ratio (F—H)/(C—O) is at least 1.5 and no more than 2. Alternatively, the gas mixture may include the heavy fluorocarbon, carbon tetrafluoride, and the diluent with the ratio of the first two chosen such the ratio F/C is between 1.5 and 2.Type: GrantFiled: February 17, 2000Date of Patent: August 13, 2002Assignee: Applied Materials, Inc.Inventors: Ji Ding, Hidehiro Kojiri, Yoshio Ishikawa, Keiji Horioka, Ruiping Wang, Robert W. Wu, Hoiman Hung