Abstract: A semiconductor device having a semiconductor layer, in which an active device such as a MOS or bipolar transistor in the front surface area of the semiconductor layer, and a device for communicating the front and rear surfaces of the semiconductor layer is formed therein in connection with one of the electrodes of the active device and exposes to a groove formed in the rear surface of the semiconductor layer. A three-dimensional semiconductor device including at least two semiconductor devices stacked one on another is also disclosed.

Abstract: The present invention relates to a data printing device suited to be built in a compact camera, the device is designed so that optical fibers are provided between the data carrier comprising data figures and the photosensitive film in such a manner that the data light is transmitted through the optical fibers so as to form an image of the data figures on the film plane by means of the image forming lens.

Abstract: Disclosed is a solar battery comprising a multi-layered "p-n" junction structure, which has a plurality of inwardly converging recesses to partially expose the inner "p-n" junctions to the sun light.

Abstract: Disclosed is an optoelectronic semiconductor comprising a semiconductor substrate, a first insulating film covering the major surface of the semiconductor substrate and a second insulating film having electronic charge-storing means and lying on the first insulating film. When an optically guided wave is propagated to the first or second insulating film in the direction parallel to the major surface of the semiconductor substrate, an interaction is caused between the electronic charges stored in the charge-storing means and the optically guided wave, thereby allowing the optically guided wave to be modulated and the electronic charges to be released.