Patents by Inventor Yoshio Kurosawa
Yoshio Kurosawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8059252Abstract: The invention relates to a liquid crystal display device that is used in display portions of electronics devices and a manufacturing method thereof, and an object is to provide a high quality liquid crystal display device where light is inhibited from leaking and a manufacturing method thereof. The projected structure formed of the first through the fourth columnar spacer receiving patterns, the insulating film and the final protective film is formed on the TFT substrate. The projected structure is buried in the columnar spacer disposed on the opposite substrate. Thereby, even when the liquid crystal display panel is surface pressed, both substrates are hardly displaced.Type: GrantFiled: May 30, 2006Date of Patent: November 15, 2011Assignee: Sharp Kabushiki KaishaInventors: Katsunori Misaki, Manabu Sawasaki, Yoshio Kurosawa
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Publication number: 20110234933Abstract: The invention relates to an active matrix liquid crystal display device which uses a switching device to control a pixel, and an object is to provide a liquid crystal display device which has an excellent viewing angle property and high brightness and a fabrication method of the same. A TFT substrate has a structure which reduces the film thickness of a protective insulating film in a control capacitance part in which control capacitance is formed and the film thickness of a protective insulating film in an auxiliary capacitance part in which auxiliary capacitance is formed thinner than the film thickness of a protective insulating film which covers a TFT and the other elements.Type: ApplicationFiled: June 6, 2011Publication date: September 29, 2011Applicant: Sharp Kabushiki KaishaInventors: Yoshio Kurosawa, Shuntaro Kosugi
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Patent number: 7978272Abstract: The invention relates to an active matrix liquid crystal display device which uses a switching device to control a pixel, and an object is to provide a liquid crystal display device which has an excellent viewing angle property and high brightness and a fabrication method of the same. A TFT substrate has a structure which reduces the film thickness of a protective insulating film in a control capacitance part in which control capacitance is formed and the film thickness of a protective insulating film in an auxiliary capacitance part in which auxiliary capacitance is formed thinner than the film thickness of a protective insulating film which covers a TFT and the other elements.Type: GrantFiled: May 24, 2006Date of Patent: July 12, 2011Assignee: Sharp Kabushiki KaishaInventors: Yoshio Kurosawa, Shuntaro Kosugi
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Patent number: 7692740Abstract: The invention relates to a substrate for a liquid crystal display used in a display section of an information apparatus, a liquid crystal display having the same, and a method of manufacturing the same. There is provided a substrate for a liquid crystal display which achieves good display quality with reduced manufacturing steps, a liquid crystal display having the same, and a method of manufacturing the same. TFTs are formed on a glass substrate. A protective film is formed on the TFTs, and a resist pattern is formed on the protective film, the resist pattern having openings located above source electrodes, gate bus line terminals, and drain bus line terminals. The resist pattern is baked at a baking temperature of 200 (or more after irradiating the surface thereof with ultraviolet light to form a wrinkled resin layer having a wrinkled surface.Type: GrantFiled: February 23, 2005Date of Patent: April 6, 2010Assignee: Sharp Kabushiki KaishaInventors: Seiji Doi, Tetsuya Fujikawa, Naoshige Itami, Yoshinori Tanaka, Atsuyuki Hoshino, Yoshio Kurosawa
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Patent number: 7459847Abstract: A wiring structure, a substrate for a display device provided therewith and a display device. The display device features a high brightness and a good display quality. The display device comprises a plurality of pixel regions arranged on a glass substrate; a TFT arranged for each of the pixel regions; an organic EL element including an anode formed by using an ITO for each of the pixel regions, and electrically connected to the source electrode of the TFT, an organic EL layer formed on the anode, and a cathode formed on the organic EL layer to transmit light from the organic EL layer; and a reflection plate for reflecting light from the organic EL layer.Type: GrantFiled: August 25, 2004Date of Patent: December 2, 2008Assignee: Sharp Kabushiki KaishaInventors: Yoshio Kurosawa, Takuya Watanabe
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Patent number: 7317209Abstract: In a method for manufacturing a TFT device, a metal thin film is formed on a gate insulation film. Patterning is performed to remove the metal thin film on a semiconductor layer, and phosphorous ions are implanted using the patterned metal thin film as a mask to form the source and drain regions. The patterned metal thin film is further patterned to form a gate electrode of an n-type TFT. Phosphorous ions are implanted using the gate electrode as a mask to form LDD regions between the source and drain regions and a channel region.Type: GrantFiled: July 2, 2003Date of Patent: January 8, 2008Assignee: Sharp Kabushiki KaishaInventors: Yoshio Kurosawa, Kazushige Hotta
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Patent number: 7312483Abstract: A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.Type: GrantFiled: February 10, 2006Date of Patent: December 25, 2007Assignee: Sharp Kabushiki KaishaInventor: Yoshio Kurosawa
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Publication number: 20070040977Abstract: The invention relates to an active matrix liquid crystal display device which uses a switching device to control a pixel, and an object is to provide a liquid crystal display device which has an excellent viewing angle property and high brightness and a fabrication method of the same. A TFT substrate has a structure which reduces the film thickness of a protective insulating film in a control capacitance part in which control capacitance is formed and the film thickness of a protective insulating film in an auxiliary capacitance part in which auxiliary capacitance is formed thinner than the film thickness of a protective insulating film which covers a TFT and the other elements.Type: ApplicationFiled: May 24, 2006Publication date: February 22, 2007Applicant: Sharp Kabushiki KaishaInventors: Yoshio Kurosawa, Shuntaro Kosugi
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Publication number: 20060285060Abstract: The invention relates to a liquid crystal display device that is used in display portions of electronics devices and a manufacturing method thereof, and an object is to provide a high quality liquid crystal display device where light is inhibited from leaking and a manufacturing method thereof. The projected structure formed of the first through the fourth columnar spacer receiving patterns, the insulating film and the final protective film is formed on the TFT substrate. The projected structure is buried in the columnar spacer disposed on the opposite substrate. Thereby, even when the liquid crystal display panel is surface pressed, both substrates are hardly displaced.Type: ApplicationFiled: May 30, 2006Publication date: December 21, 2006Applicant: SHARP KABUSHIKI KAISHAInventors: Katsunori MISAKI, Manabu SAWASAKI, Yoshio KUROSAWA
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Publication number: 20060166413Abstract: A semiconductor film is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.Type: ApplicationFiled: February 10, 2006Publication date: July 27, 2006Inventor: Yoshio Kurosawa
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Patent number: 7071504Abstract: A semiconductor film into which p-type impurities have been introduced is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.Type: GrantFiled: February 26, 2003Date of Patent: July 4, 2006Assignee: Sharp Kabushiki KaishaInventor: Yoshio Kurosawa
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Publication number: 20050212412Abstract: A wiring structure, a substrate for a display device provided therewith and a display device. The display device features a high brightness and a good display quality. The display device comprises a plurality of pixel regions arranged on a glass substrate; a TFT arranged for each of the pixel regions; an organic EL element including an anode formed by using an ITO for each of the pixel regions, and electrically connected to the source electrode of the TFT, an organic EL layer formed on the anode, and a cathode formed on the organic EL layer to transmit light from the organic EL layer; and a reflection plate for reflecting light from the organic EL layer.Type: ApplicationFiled: August 25, 2004Publication date: September 29, 2005Inventors: Yoshio Kurosawa, Takuya Watanabe
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Publication number: 20050157237Abstract: The invention relates to a substrate for a liquid crystal display used in a display section of an information apparatus, a liquid crystal display having the same, and a method of manufacturing the same. There is provided a substrate for a liquid crystal display which achieves good display quality with reduced manufacturing steps, a liquid crystal display having the same, and a method of manufacturing the same. TFTs are formed on a glass substrate. A protective film is formed on the TFTs, and a resist pattern is formed on the protective film, the resist pattern having openings located above source electrodes, gate bus line terminals, and drain bus line terminals. The resist pattern is baked at a baking temperature of 200 (or more after irradiating the surface thereof with ultraviolet light to form a wrinkled resin layer having a wrinkled surface.Type: ApplicationFiled: February 23, 2005Publication date: July 21, 2005Inventors: Seiji Doi, Tetsuya Fujikawa, Naoshige Itami, Yoshinori Tanaka, Atsuyuki Hoshino, Yoshio Kurosawa
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Patent number: 6882394Abstract: The invention relates to a substrate for a liquid crystal display used in a display section of an information apparatus, a liquid crystal display having the same, and a method of manufacturing the same. There is provided a substrate for a liquid crystal display which achieves good display quality with reduced manufacturing steps, a liquid crystal display having the same, and a method of manufacturing the same. TFTs are formed on a glass substrate. A protective film is formed on the TFTs, and a resist pattern is formed on the protective film, the resist pattern having openings located above source electrodes, gate bus line terminals, and drain bus line terminals. The resist pattern is baked at a baking temperature of 200° or more after irradiating the surface thereof with ultraviolet light to form a wrinkled resin layer having a wrinkled surface.Type: GrantFiled: May 29, 2003Date of Patent: April 19, 2005Assignee: Fujitsu-Display Technologies CorporationInventors: Seiji Doi, Yoshio Kurosawa
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Publication number: 20040051101Abstract: LDD regions can be properly formed even when a gate insulation film is thin, and an impurity can be properly activated. After forming a gate electrode, an n-type impurity is implanted in a high density using a resist mask for etching the gate insulation film as a mask. A SiO2 film is formed as a first interlayer insulation film, and activation is thereafter performed using a laser. By implanting the impurity with the resist mask for etching left in place, the problem of excessive implantation of the n-type impurity in the LDD regions can be avoided without adding a photolithographic process even when the gate insulation film is thin.Type: ApplicationFiled: July 2, 2003Publication date: March 18, 2004Applicant: FUJITSU DISPLAY TECHNOLOGIES CORPORATIONInventors: Kazushige Hotta, Yoshio Kurosawa
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Publication number: 20040048422Abstract: The invention relates to a TFT device, a method of manufacturing the same, and a TFT substrate and a display having the same and provides a TFT device having good characteristics and high reliability, a method of manufacturing the same, and a TFT substrate and a display having the same. A metal thin film is formed on a gate insulation film. Patterning is performed to remove the metal thin film on a semiconductor layer to become source and drain regions of an n-type TFT. Phosphorous ions are implanted using the patterned metal thin film as a mask to form the source and drain regions. The patterned metal thin film is further patterned to form a gate electrode of the n-type TFT. Phosphorous ions are implanted using the gate electrode as a mask to form LDD regions between the source and drain regions and a channel region.Type: ApplicationFiled: July 2, 2003Publication date: March 11, 2004Applicant: FUJITSU DISPLAY TECHNOLOGIES CORPORATIONInventors: Yoshio Kurosawa, Kazushige Hotta
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Patent number: 6689235Abstract: A method of manufacturing the rolled copper foil by a process which comprises hot rolling an ingot repeating cold rolling and annealing alternately, and finally cold rolling the work to a foil, the annealing immediately preceding the final cold rolling being performed under conditions that enable the annealed recrystallized grains to have a mean grain diameter of not greater than 20 &mgr;m, the reduction ration of the final cold rolling being beyond 90.0%, whereby excellent flex fatigue property and adequate softening property are achieved.Type: GrantFiled: December 4, 2001Date of Patent: February 10, 2004Assignee: Nippon Mining & Metals Co., Ltd.Inventors: Takaaki Hatano, Yoshio Kurosawa
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Publication number: 20040001174Abstract: The invention relates to a substrate for a liquid crystal display used in a display section of an information apparatus, a liquid crystal display having the same, and a method of manufacturing the same. There is provided a substrate for a liquid crystal display which achieves good display quality with reduced manufacturing steps, a liquid crystal display having the same, and a method of manufacturing the same. TFTs are formed on a glass substrate. A protective film is formed on the TFTs, and a resist pattern is formed on the protective film, the resist pattern having openings located above source electrodes, gate bus line terminals, and drain bus line terminals. The resist pattern is baked at a baking temperature of 200° or more after irradiating the surface thereof with ultraviolet light to form a wrinkled resin layer having a wrinkled surface.Type: ApplicationFiled: May 29, 2003Publication date: January 1, 2004Applicant: Fujitsu Display Technologies CorporationInventors: Seiji Doi, Tetsuya Fujikawa, Naoshige Itami, Yoshinori Tanaka, Atsuyuki Hoshino, Yoshio Kurosawa
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Publication number: 20030160245Abstract: A semiconductor film into which p-type impurities have been introduced is formed on a substrate. Subsequently, a resist film is formed on the semiconductor film, and dry etching is performed to the semiconductor film using the resist film as a mask. Due to the dry etching, the edge portion of the semiconductor film protrudes from the resist film. Next, the p-type impurities are introduced into the edge portion of the semiconductor film using the resist film as a mask. The volume density of the p-type impurities in a channel edge portion of the semiconductor film is two to five times the volume density of the p-type impurities in a channel center section. Subsequently, the resist film is removed to form a gate insulating film and a gate electrode.Type: ApplicationFiled: February 26, 2003Publication date: August 28, 2003Applicant: FUJITSU DISPLAY TECHNOLOGIES CORPORATIONInventor: Yoshio Kurosawa
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Publication number: 20030153110Abstract: A thin film transistor substrate including a semiconductor layer having a source region and a drain region, an insulating film and a gate electrode which are formed on the semiconductor layer, an interlayer insulating film which is a film stack with mutually different dielectric constants and which covers the gate electrode, a source region contact hole and a drain region contact hole which are formed on the interlayer insulating film, a pixel electrode connected to the source region through the source region contact hole, a first conductive film connected to the drain region through the drain region contact hole and formed of the same film as that of the pixel electrode, and a second conductive film connected to the drain region through the first conductive film.Type: ApplicationFiled: December 9, 2002Publication date: August 14, 2003Applicant: FUJITSU DISPLAY TECHNOLOGIES CORPORATION.Inventors: Kazushige Hotta, Yoshio Kurosawa, Seii Sato, Takuya Watanabe, Hiroyuki Yaegashi