Abstract: A resist layer is applied to a metal film disposed on a semiconductor substrate, using a positive photoresist having photosensitivity to at least one wavelength. The resist layer is exposed to light including a region of the one wavelength. The exposed resist layer is developed. After the step of developing the resist layer, the metal film is subjected to wet etching with the resist layer used as a mask, in an etching apparatus. The etching apparatus is placed in an environment irradiated with a lighting apparatus that emits light with a wavelength equal to or shorter than the one wavelength cut off.

Abstract: A resist layer is applied to a metal film disposed on a semiconductor substrate, using a positive photoresist having photosensitivity to at least one wavelength. The resist layer is exposed to light including a region of the one wavelength. The exposed resist layer is developed. After the step of developing the resist layer, the metal film is subjected to wet etching with the resist layer used as a mask, in an etching apparatus. The etching apparatus is placed in an environment irradiated with a lighting apparatus that emits light with a wavelength equal to or shorter than the one wavelength cut off.

Abstract: The object of the present invention is to provide a semiconductor device and a process of producing the same, in which a low contact resistance is ensured, the interwiring connection of a multilayered conductor wiring structure has good long term reliability, and the production time can be reduced. An interlaminar insulating layer 4 is etched with an etchant gas containing a fluorine-based gas to form a contact hole 6, during which a fluoride layer 22 is formed on a Ti layer 13 which forms an upper protective layer of a conductor wiring layer 3 on the bottom of the contact hole 6. According to the present invention, the fluoride layer 22 is removed, together with the Ti layer 13 on the bottom of the contact hole 6, by a gas mixture of a fluorine-based gas and oxygen gas in an ashing apparatus.

Abstract: A disk cartridge shutter opening and closing mechanism which is disclosed herein is designed to open and close a shutter of a disk cartridge having a variety of disks contained in a shuttered hard case and is of a construction having a pair of arms swingably mounted within a range of a width of the disk cartridge, the arm having a block which is pivotally mounted on its leading end and integrally formed with an engage head portion and an arm portion which are used for opening and closing of the shutter. The pushing-in of the disk cartridge causes the pair of arms to be swung toward each other, thereby opening and closing the shutter. A smaller pushing-in force enables the shutter to be smoothly opened and closed. Moreover, the whole mechanism is thin and compact.