Abstract: In a method for producing a photoelectric conversion device including a light absorption layer made of a CIGS-based compound semiconductor, a vacancy formation process for forming Cu vacancies in a surface layer of the light absorption layer in a layered member that is composed of a lower electrode and the light absorption layer deposited on a substrate is performed, and after then, a pn junction is formed in the surface layer of the light absorption layer.

Abstract: Provision of a dispersion liquid of metal oxide fine particles, containing: metal oxide fine particles, and a halogen element, in which an amount of the halogen element is 10 ppm to 900 ppm, and pH of the dispersion liquid is 0 to 4.

Abstract: An object of the present invention is to produce core-shell structured metal oxide particles having a high refractive index and low photocatalytic activity. For this purpose, a method for producing core-shell structured metal oxide particles is provided in which shells composed of a metal oxide are formed on surfaces of core particles while exposing the core particles to light having the intensity of 0.1 mW/cm2 or more.

Abstract: A dispersion liquid of metal oxide fine particles, including metal oxide fine particles each containing at least titanium, wherein the metal oxide fine particles have a sphere-equivalent average primary particle diameter of 1 nm to 20 nm, and a sphere-equivalent average secondary particle diameter of 20 nm or less, wherein the sphere-equivalent average secondary particle diameter of the metal oxide fine particles is larger than the sphere-equivalent average primary particle diameter thereof by 4 times or less, and wherein the metal oxide fine particles have a water content of 12% or less.

Abstract: Provision of a dispersion liquid of metal oxide fine particles, containing: metal oxide fine particles, and a halogen element, in which an amount of the halogen element is 10 ppm to 900 ppm, and pH of the dispersion liquid is 0 to 4.

Abstract: Disclosed is a method for producing a transparent conductive film comprising a coating step for coating a coating solution containing metal nanoparticles on a substrate to form a coated layer, a drying step for drying the coated layer and a baking step for baking the coated layer to obtain a transparent conductive film, wherein a metal in the metal nanoparticles is oxidized to a metal oxide during at least one of the coating step, the drying step and the baking step. According to this method, a transparent conductive film having a low specific resistance and a high light transmittance can be produced by coating.

Abstract: A dispersion of metal oxide fine particles, containing metal oxide fine particles, a strong acid and an aqueous solution, wherein the metal oxide fine particles and the strong acid are dispersed in an aqueous solution containing alcohol, and the dispersion of metal oxide fine particles has a light transmittance at 800 nm wavelength of 90% or more.

Abstract: To provide a method for producing a dispersion of metal oxide fine particles including subjecting a titanium oxide precursor to heat treatment in the presence of an acid so as to prepare a dispersion of titanium oxide fine particles, mixing a metal oxide precursor with the dispersion of titanium oxide fine particles so as to form a mixture, and subjecting the mixture to heat treatment so as to form metal oxide fine particles, wherein the titanium oxide fine particles have a particle diameter of 0.5 nm to 5 nm.

Abstract: A method for fixing a plastic substrate, comprising (1) applying or sticking an adhesive material onto a supporting substrate to form an adhesive material layer on the supporting substrate, (2) applying selective adhesive strength controlling treatment to the adhesive material layer to form at least two regions of a low adhesive strength region and a high adhesive strength region, and (3) applying under pressure a plastic substrate to the adhesive material layer at most 300 Torr.

Abstract: A method of producing a crystalline ITO dispersed solution, which contains the steps of: (a) causing an aqueous mixed solution of an indium compound and a tin compound to react with an aqueous basic solution, thereby generating a gel; (b) removing water content from the gel by solvent-exchange, and dispersing the resultant into an organic solvent; and (c) subjecting the resultant dispersed product to heating treatment.

Abstract: A method of producing a crystalline ITO dispersed solution, which contains the steps of: (a) causing an aqueous mixed solution of an indium compound and a tin compound to react with an aqueous basic solution, thereby generating a gel; (b) removing water content from the gel by solvent-exchange, and dispersing the resultant into an organic solvent; and (c) subjecting the resultant dispersed product to heating treatment.

Abstract: Disclosed is a method for producing a transparent conductive film comprising a coating step for coating a coating solution containing metal nanoparticles on a substrate to form a coated layer, a drying step for drying the coated layer and a baking step for baking the coated layer to obtain a transparent conductive film, wherein a metal in the metal nanoparticles is oxidized to a metal oxide during at least one of the coating step, the drying step and the baking step. According to this method, a transparent conductive film having a low specific resistance and a high light transmittance can be produced by coating.

Abstract: A photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of irradiating semiconductor particles with electromagnetic wave or a step of heating semiconductor particles at a temperature of 50° C. or higher and lower than 350° C. under a pressure of 0.05 MPa or lower.

Abstract: A photoelectric conversion device comprising a particulate semiconductor layer, wherein the particulate semiconductor layer is prepared by a method comprising a step of irradiating semiconductor particles with electromagnetic wave or a step of heating semiconductor particles at a temperature of 50° C. or higher and lower than 350° C. under a pressure of 0.05 MPa or lower.

Abstract: An optical recording medium comprises a recording layer containing, as a photoresponsive material, metal chalcogenide nanoparticles, wherein the metal chalcogenide nanoparticles have an average particle size of 1 to 20 nm and have a surface modified with an adsorbable compound.