Abstract: An oil pressure command value for slip-control of a lock-up clutch of a torque converter is calculated based on a feed-forward oil pressure value calculated by an FF value calculating unit and a feed-back oil pressure value calculated by a feedback value calculating unit. When the feedback oil pressure value is calculated, a deviation out-of-range determining unit determines whether a deviation between actual rotational speed difference and target rotational speed difference is outside of a predetermined range. If the deviation is outside of the predetermined range, a feedback value correcting unit calculates a correction value and corrects the feedback oil pressure value. Therefore, when the deviation is outside of the predetermined range, the actual rotational speed difference is brought into convergence with the target rotational speed difference with rapid response.

Abstract: An oil pressure command value for slip-control of a lock-up clutch of a torque converter is calculated based on a feed-forward oil pressure value calculated by an FF value calculating unit and a feed-back oil pressure value calculated by a feedback value calculating unit. When the feedback oil pressure value is calculated, a deviation out-of-range determining unit determines whether a deviation between actual rotational speed difference and target rotational speed difference is outside of a predetermined range. If the deviation is outside of the predetermined range, a feedback value correcting unit calculates a correction value and corrects the feedback oil pressure value. Therefore, when the deviation is outside of the predetermined range, the actual rotational speed difference is brought into convergence with the target rotational speed difference with rapid response.

Abstract: To create bipolar and MOS transistors, a substrate is covered with polysilicon. The polysilicon is patterned to form gate electrodes in MOS transistor regions, and to form polysilicon patterns surrounding central openings in bipolar transistor base-and-emitter regions. Lightly-doped source and drain layers are created by implanting impurities into the MOS transistor regions, using the gate electrodes as masks. Active bases are formed in the base-and-emitter regions below the central openings. Then sidewalls are added to the polysilicon, narrowing the central openings and widening the gate electrodes. Impurities are implanted into the MOS transistor regions, using the widened gate electrodes as masks, to create heavily-doped source and drain layers. The active base areas are doped below the narrowed central openings to create emitters.