Abstract: A clamper mechanism for a motion guide device includes a clamper block having tapered faces, clamper rolling elements arranged between the tapered faces and both left and right side faces of a track member, and a clamper rolling element holder attached to the clamper block with an interposition of an elastic member. When an elastic force exerted by the elastic member acts in a direction in which the clamper block and the clamper rolling element holder are separated from each other, the clamper rolling elements bite the tapered faces to bring the clamper block into a state restrained to the track member. When an external force against the elastic force exerted by the elastic member acts, the clamper rolling elements are brought into a free state within the tapered faces to bring the clamper block into a state not restrained to the track member to exert a stable clamping force.

Abstract: A clamper mechanism for a motion guide device includes a clamper block having tapered faces, clamper rolling elements arranged between the tapered faces and both left and right side faces of a track member, and a clamper rolling element holder attached to the clamper block with an interposition of an elastic member. When an elastic force exerted by the elastic member acts in a direction in which the clamper block and the clamper rolling element holder are separated from each other, the clamper rolling elements bite the tapered faces to bring the clamper block into a state restrained to the track member. When an external force against the elastic force exerted by the elastic member acts, the clamper rolling elements are brought into a free state within the tapered faces to bring the clamper block into a state not restrained to the track member to exert a stable clamping force.

Abstract: A semiconductor device operating at a high frequency, includes: a semiconductor layer; a first electrode for being applied with a voltage to control a current flowing in the semiconductor layer; a second electrode and a third electrode electrically connected to the semiconductor layer, at least one of the second and third electrodes being elongated above the first electrode to form a hollow around the first electrode by surrounding the first electrode with the second and third electrodes and the semiconductor layer; a passivation film formed over the second and third electrodes; and wherein the first electrode is directly in contact with an atmosphere in the hollow.

Abstract: A semiconductor device operating at a high frequency, includes: a semiconductor layer; a first electrode for being applied with a voltage to control a current flowing in the semiconductor layer; a second electrode and a third electrode electrically connected to the semiconductor layer, at least one of the second and third electrodes being elongated above the first electrode to form a hollow around the first electrode by surrounding the first electrode with the second and third electrodes and the semiconductor layer; a passivation film formed over the second and third electrodes; and wherein the first electrode is directly in contact with an atmosphere in the hollow.