Patents by Inventor Yoshirou Aoki

Yoshirou Aoki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050203730
    Abstract: A rectangular wave for determining a range of a weight function is transformed to frequency domain by an FFT or the like, and after being multiplied by a window function (BlackmanHarris window function, for example) generated on a frequency axis by a multiplier, the frequency domain is transformed again to the time domain by an IFFT or the like thereby to generate a weight function.
    Type: Application
    Filed: March 10, 2005
    Publication date: September 15, 2005
    Inventors: Yoshirou Aoki, Masakazu Wada, Junichi Horikomi, Shinkichi Nishimoto
  • Publication number: 20050083226
    Abstract: A secondary surveillance radar system for use in surveillance of an airspace, which reliably achieves surveillance of the airspace even when an aircraft including a mode S transponder and an aircraft including an ATCRBS transponder are both located in the airspace, wherein both of a time interval between time when transmission of an all-call interrogation signal specific for mode S is completed and time when the transmission of an all-call interrogation signal specific for mode A is started and a time interval between time when transmission of the all-call interrogation signal specific for mode S is completed and time when transmission of an all-call interrogation signal specific for mode C is started is varied in units of one all-call time period.
    Type: Application
    Filed: September 3, 2004
    Publication date: April 21, 2005
    Inventors: Yoshinori Kuji, Yoshirou Aoki, Hisashi Ootomo
  • Publication number: 20040187769
    Abstract: A method of producing an SOI wafer comprises the steps of forming an ion-implanted layer by forming an oxide film on at least one silicon wafer between two silicon wafers and implanting hydrogen ions or rare gas ions into one silicon wafer, superposing the surface of the silicon wafer on which the ion-implanted layer is formed and the other silicon wafer, heating at a temperature between 300° C. and 900° C., and delaminating from the ion-implanted wafer, and performing a heat treatment of the delaminated wafer at a temperature between 1000° C. and 1300° C., wherein the wafer forming the ion-implanted layer has an interstitial oxygen concentration of 1×1018/cm3 (old ASTM) or higher, and the method further comprises a step to grow an epitaxial layer on the SOI layer formed in the previous step.
    Type: Application
    Filed: March 27, 2003
    Publication date: September 30, 2004
    Inventor: Yoshirou Aoki