Abstract: An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 ?m or larger and 50 ?m or smaller.

Abstract: A thermoelectric conversion module is a thermoelectric conversion module in which a plurality of thermoelectric conversion elements are electrically connected to each other via a first electrode portion disposed on first end side of the thermoelectric conversion elements and a second electrode portion disposed on the second end side of the thermoelectric conversion elements; a first insulating circuit board provided with a first insulating layer of which at least one surface is made of alumina and the first electrode portion formed of a sintered body of Ag formed on the one surface of the first insulating layer is disposed on the first end side of the thermoelectric conversion elements; and a glass component is present at an interface between the first electrode portion and the first insulating layer.

Abstract: An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 ?m or larger and 50 ?m or smaller.

Abstract: A thermoelectric conversion module includes thermoelectric conversion elements, and a first insulating circuit board provided with a first insulating layer and a first electrode part formed on one surface of the first insulating layer is disposed on one end side of the thermoelectric conversion elements. The first electrode part includes a first aluminum layer made of aluminum or an aluminum alloy, and a first sintered silver layer which is formed on a surface of the first aluminum layer on a side opposite to the first insulating layer and is formed of a sintered body of silver. The first aluminum layer has a thickness in a range of 50 ?m or more and 2000 ?m or less. The first sintered silver layer has a thickness of 5 ?m or more and a porosity of less than 10% at least in a region where the thermoelectric conversion element is disposed.

Abstract: A thermoelectric conversion module is a thermoelectric conversion module in which a plurality of thermoelectric conversion elements are electrically connected to each other via a first electrode portion disposed on first end side of the thermoelectric conversion elements and a second electrode portion disposed on the second end side of the thermoelectric conversion elements; a first insulating circuit board provided with a first insulating layer of which at least one surface is made of alumina and the first electrode portion formed of a sintered body of Ag formed on the one surface of the first insulating layer is disposed on the first end side of the thermoelectric conversion elements; and a glass component is present at an interface between the first electrode portion and the first insulating layer.

Abstract: The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 ?m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 ?m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 ?m from the bonded interface toward the aluminum member side is 0.8 mass % or less.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 ?m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 ?m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 ?m from the bonded interface toward the aluminum member side is 0.8 mass % or less.

Abstract: A heat-sink-attached-power module substrate (1) has a configuration such that either one of a metal layer (13) and a heat sink (31) is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer (13) and the heat sink (31) are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer (13) and the heat sink (31), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer (13) composed of copper or a copper alloy and heat sink (31) composed of copper or a copper alloy in a layered form along the interface.

Abstract: The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t1 of the circuit layer and a thickness t2 of the second aluminum layer of the metal layer satisfy t1<t2.

Abstract: A heat-sink-attached-power module substrate (1) has a configuration such that either one of a metal layer (13) and a heat sink (31) is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer (13) and the heat sink (31) are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer (13) and the heat sink (31), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer (13) composed of copper or a copper alloy and heat sink (31) composed of copper or a copper alloy in a layered form along the interface.

Abstract: A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

Abstract: A power module has a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 ?m from the surface of the circuit layer in the solder layer is 10 ?m or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: A power module substrate including an insulating substrate, a circuit layer formed on one surface of the insulating substrate, and a metal layer formed on the other surface of the insulating substrate, wherein the circuit layer is composed of copper or a copper alloy, one surface of this circuit layer functions as an installation surface on which an electronic component is installed, the metal layer is formed by bonding an aluminum sheet composed of aluminum or an aluminum alloy, a thickness t1 of the circuit layer is within a range of 0.1 mm?t1?0.6 mm, a thickness t2 of the metal layer is within a range of 0.5 mm?t2?6 mm, and the relationship between the thickness t1 of the circuit layer and the thickness t2 of the metal layer satisfies t1<t2.

Abstract: In a power module according to the present invention, a copper layer composed of copper or a copper alloy is provided at a surface of a circuit layer onto which a semiconductor element is bonded, and a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element. An alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu is formed at the interface between the solder layer and the circuit layer, the thickness of the alloy layer is set to be within a range of 2 ?m or more and 20 ?m or less, and a thermal resistance increase rate is less than 10% after loading a power cycles 100,000 times under a condition where an energization time is 5 seconds and a temperature difference is 80° C. in a power cycle test.

Abstract: Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.

Abstract: The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t1 of the circuit layer and a thickness t2 of the second aluminum layer of the metal layer satisfy t1<t2.

Abstract: This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer (50) having a Mg-containing compound (52) (excluding MgO) which contains Mg dispersed in an Al—Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer (50) is within a range from 5 ?m to 80 ?m.