Abstract: A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.

Abstract: A curing accelerator can exhibit good curing acceleration performance and is excellent in storage stability, while maintaining sufficient pot life in a curing reaction of radical-polymerizable resins, and a radical-polymerizable resin composition uses the curing accelerator. The curing accelerator for radical-polymerizable resins includes a metal-containing compound (A), a thiol compound (B) and an aprotic solvent (C) having a dielectric constant of 10 or less, wherein the metal-containing compound (A) is one or more compounds selected from a metal soap (A1) and a ?-diketone skeleton-having metal complex (A2), the thiol compound (B) is one or more compounds selected from a mono-functional primary thiol compound (B1), a secondary thiol compound (B2) and a tertiary thiol compound (B3), and the content of the aprotic solvent (C) is 10 to 1,000 parts by mass relative to 100 parts by mass of the total of the metal-containing compound (A) and the thiol compound (B).

Abstract: An oxygen reduction catalyst containing as constituent elements cobalt, sulfur, and a transition metal element M being at least one element selected from chromium and molybdenum, the oxygen reduction catalyst being ascertained to have a crystal structure of a cobalt disulfide cubic crystal in powder X-ray diffraction measurement, and having a molar ratio of the transition metal element M to cobalt (M/cobalt) of 5/95 to 15/85. Also disclosed is an electrode having a catalyst layer containing the oxygen reduction catalyst, a membrane electrode assembly including a polymer electrolyte membrane wherein the electrode serves as a cathode and/or an anode, and a fuel cell including the membrane electrode assembly.

Abstract: A polymer design device according to an embodiment of the present disclosure receives a requirement for a target physical property of a desired polymer, and acquires structural information of polymers. For each polymer corresponding to the acquired structural information, the polymer design device estimates physical property information of the polymer including a mean value and a standard deviation, based on the structural information of the polymer and a regression model, and calculates a score of the polymer based on the requirement for the target physical property and based on the mean value and the standard deviation. From among the acquired structural information of the polymers, the polymer design device selects at least one polymer as the desired polymer, based on the score of each of the polymers, and outputs information of the selected at least one polymer.

Abstract: The present invention relates to an oxygen reduction catalyst, an electrode, a membrane electrode assembly, and a fuel cell, and the oxygen reduction catalyst is an oxygen reduction catalyst containing substituted CoS2, in which the substituted CoS2 has a cubic crystal structure, the oxygen reduction catalyst contains the substituted CoS2 within 0.83 nm from the surface thereof, and the substituted CoS2 has at least one substitutional atom selected from the group consisting of Cr, Mo, Mn, Tc, Re, Rh, Cu, and Ag in some of Co atom sites.

Abstract: A fluorine-containing ether compound of the present invention is represented by the following General Formula (1). (In the General Formula (1), X is a trivalent atom or a trivalent atom group, A is a linking group including at least one polar group, B is a linking group having a perfluoropolyether chain, and D is a polar group or a substituent having a polar group at the end.) [Chem.

Abstract: The present invention relates to an oxygen reduction catalyst, an electrode, a membrane electrode assembly, and a fuel cell, and the oxygen reduction catalyst is an oxygen reduction catalyst containing substituted CoS2, in which the substituted CoS2 has a cubic crystal structure, the oxygen reduction catalyst contains the substituted CoS2 within 0.83 nm from the surface thereof, and the substituted CoS2 has at least one substitutional atom selected from the group consisting of Cr, Mo, Mn, Tc, Re, Rh, Cu, and Ag in some of Co atom sites.

Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.

Abstract: A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; and a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor, in which an unevenness is formed on a radiation-receiving surface of the susceptor, which faces a first surface of the heater provided at the susceptor side, and the unevenness is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view.

Abstract: A SiC epitaxial growth apparatus includes: a susceptor having a mounting surface on which a wafer is placable; a heater which is provided apart from the susceptor on a side opposite to the mounting surface of the susceptor; and an annular radiation member which is in contact with a back surface of the susceptor opposite to the mounting surface and is located at a position which is overlapped with an outer peripheral portion of the wafer placed on the susceptor in a plan view, in which the radiation member has a higher emissivity than that of the susceptor and has an exposed portion as viewed from the heater.