Patents by Inventor Yoshitaka Kai
Yoshitaka Kai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110299962Abstract: A vacuum processing apparatus includes vacuum processing chambers for subjecting a sample to vacuum processing, a vacuum carriage, a switchable chamber, a cassette support for supporting a plurality of cassettes capable of housing samples, and a waiting cassette support for supporting a waiting cassette that differs from the cassettes supported on the cassette support and capable of having a number of samples. An atmospheric carriage enables carrying a sample among a given cassette of the plurality of cassettes or the waiting cassette. A controller effects control for carrying unprocessed and processed samples among the given cassette, the waiting cassette and the vacuum processing chamber, so that a mixture of both processed and unprocessed samples does not exist in the given cassette or the waiting cassette.Type: ApplicationFiled: August 15, 2011Publication date: December 8, 2011Inventors: Takeshi OONO, Kenji Nakata, Shoji Okiguchi, Tooru Ueno, Hidehiro Oomae, Shigeharu Minami, Yoshitaka Kai
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Patent number: 8033770Abstract: A vacuum processing apparatus includes vacuum processing chambers for subjecting a sample to vacuum processing, a vacuum carriage, a switchable chamber, a cassette support for supporting a plurality of cassettes capable of housing samples, and a waiting cassette support for supporting a waiting cassette that differs from the cassettes supported on the cassette support and capable of having a number of samples. An atmospheric carriage enables carrying a sample among a given cassette of the plurality of cassettes or the waiting cassette. A controller effects control for carrying unprocessed and processed samples among the given cassette, the waiting cassette and the vacuum processing chamber, so that a mixture of both processed and unprocessed samples does not exist in the given cassette or the waiting cassette.Type: GrantFiled: August 29, 2008Date of Patent: October 11, 2011Assignee: Hitachi High-Technologies CorporationInventors: Takeshi Oono, Kenji Nakata, Shoji Okiguchi, Tooru Ueno, Hidehiro Oomae, Shigeharu Minami, Yoshitaka Kai
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Patent number: 7862289Abstract: A vacuum processing apparatus and method in which the apparatus includes vacuum processing chambers for subjecting a sample to vacuum processing, a vacuum carriage, a switchable chamber, a cassette support for supporting a plurality of cassettes capable of housing samples, and a waiting cassette support for supporting a waiting cassette that differs from the cassettes supported on the cassette support and capable of having a number of samples. An atmospheric carriage enables carrying a sample among a given cassette of the plurality of cassettes or the waiting cassette. A controller effects control for carrying unprocessed and processed samples among the given cassette, the waiting cassette and the vacuum processing chamber, so that a mixture of both processed and unprocessed samples does not exist in the given cassette or the waiting cassette.Type: GrantFiled: August 29, 2008Date of Patent: January 4, 2011Assignee: Hitachi High-Technologies CorporationInventors: Takeshi Oono, Kenji Nakata, Shoji Okiguchi, Tooru Ueno, Hidehiro Oomae, Shigeharu Minami, Yoshitaka Kai
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Patent number: 7476073Abstract: A vacuum processing apparatus and method includes at least one vacuum processing chamber, at least one carriage for carrying the sample from a given cassette into and out of the vacuum processing chamber. A controller performs carriage control for carrying the sample taken out of the given cassette into the vacuum processing chamber, and for carrying the processed sample out of the vacuum processing chamber. A waiting cassette support supports a waiting cassette in which an unprocessed sample from the given cassette or a processed sample from the given cassette after vacuum processing is placed so as to prevent the processed and unprocessed sample from being mixed with each other.Type: GrantFiled: June 24, 2004Date of Patent: January 13, 2009Assignee: Hitachi High-Technologies CorporationInventors: Takeshi Oono, Kenji Nakata, Shoji Okiguchi, Tooru Ueno, Hidehiro Oomae, Shigeharu Minami, Yoshitaka Kai
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Publication number: 20090010738Abstract: A vacuum processing apparatus includes vacuum processing chambers for subjecting a sample to vacuum processing, a vacuum carriage, a switchable chamber, a cassette support for supporting a plurality of cassettes capable of housing samples, and a waiting cassette support for supporting a waiting cassette that differs from the cassettes supported on the cassette support and capable of having a number of samples. An atmospheric carriage enables carrying a sample among a given cassette of the plurality of cassettes or the waiting cassette. A controller effects control for carrying unprocessed and processed samples among the given cassette, the waiting cassette and the vacuum processing chamber, so that a mixture of both processed and unprocessed samples does not exist in the given cassette or the waiting cassette.Type: ApplicationFiled: August 29, 2008Publication date: January 8, 2009Inventors: Takeshi Oono, Kenji Nakata, Shoji Okiguchi, Tooru Ueno, Hidehiro Oomae, Shigeharu Minami, Yoshitaka Kai
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Publication number: 20090003978Abstract: A vacuum processing apparatus and method in which the apparatus includes vacuum processing chambers for subjecting a sample to vacuum processing, a vacuum carriage, a switchable chamber, a cassette support for supporting a plurality of cassettes capable of housing samples, and a waiting cassette support for supporting a waiting cassette that differs from the cassettes supported on the cassette support and capable of having a number of samples. An atmospheric carriage enables carrying a sample among a given cassette of the plurality of cassettes or the waiting cassette. A controller effects control for carrying unprocessed and processed samples among the given cassette, the waiting cassette and the vacuum processing chamber, so that a mixture of both processed and unprocessed samples does not exist in the given cassette or the waiting cassette.Type: ApplicationFiled: August 29, 2008Publication date: January 1, 2009Inventors: Takeshi Oono, Kenji Nakata, Shoji Okiguchi, Tooru Ueno, Hidehiro Oomae, Shigeharu Minami, Yoshitaka Kai
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Publication number: 20070023683Abstract: A vacuum processing apparatus and method includes a sample taken out from a given cassette placed on a cassette support in atmosphere, the sample is carried into a vacuum processing chamber via a chamber enabling switching between atmosphere and vacuum, the sample is subjected to etching processing in the vacuum processing chamber, and at least one inspection process is carried out in the vacuum either before or after etching of the sample in the vacuum processing chamber. The at least one inspection process in the vacuum is a defect inspection.Type: ApplicationFiled: September 12, 2006Publication date: February 1, 2007Inventors: Yoshitaka Kai, Kenichi Kuwabara, Takeo Uchino, Yasuhiro Nishimori, Takeshi Oono, Takeshi Shimada
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Patent number: 7112805Abstract: The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs. The vacuum processing apparatus comprises a plurality of vacuum processing chambers for subjecting a sample to vacuum processing; a vacuum carriage for carrying the sample into and out of the vacuum processing chamber; a switchable chamber capable of being switched between atmosphere and vacuum for carrying the sample into and out of the vacuum processing chamber; a cassette support for supporting a plurality of cassettes and a controller for controlling carrying of the sample from a cassette through the switchable chambers, the vacuum carriage means into and out of the vacuum processing chamber. The vacuum processing chamber is equipped with an etching chamber and a critical dimension measurement chamber for critical dimension inspection of the sample.Type: GrantFiled: June 25, 2004Date of Patent: September 26, 2006Assignee: Hitachi High-Technologies CorporationInventors: Yoshitaka Kai, Kenichi Kuwabara, Takeo Uchino, Yasuhiro Nishimori, Takeshi Oono, Takeshi Shimada
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Publication number: 20060032585Abstract: A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of side walls of the Poly-Si gate portion 33 during plasma etching of HfO2.Type: ApplicationFiled: August 8, 2005Publication date: February 16, 2006Inventors: Yoshitaka Kai, Ken Yoshioka, Tadamitsu Kanekiyo, Takeshi Shimada
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Publication number: 20050220575Abstract: The invention provides a vacuum processing apparatus and vacuum processing method capable of improving the yield factor of a product.Type: ApplicationFiled: June 24, 2004Publication date: October 6, 2005Inventors: Takeshi Oono, Kenji Nakata, Shoji Okiguchi, Tooru Ueno, Hidehiro Oomae, Shigeharu Minami, Yoshitaka Kai
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Publication number: 20050218337Abstract: The invention provides a semiconductor fabrication apparatus capable of preventing increase of carriage time of samples, deterioration of sample output, increase of footprint and increase of investment costs.Type: ApplicationFiled: June 25, 2004Publication date: October 6, 2005Inventors: Yoshitaka Kai, Kenichi Kuwabara, Takeo Uchino, Yasuhiro Nishimori, Takeshi Oono, Takeshi Shimada
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Publication number: 20050014380Abstract: A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of sidewalls of the Poly-Si gate portion 33 during plasma etching of HfO2.Type: ApplicationFiled: August 29, 2003Publication date: January 20, 2005Inventors: Yoshitaka Kai, Ken Yoshioka, Tadamitsu Kanekiyo, Takeshi Shimada