Abstract: A resist composition including: a compound including an anion moiety and a cation moiety and represented by the following Formula (bd1); and an organic solvent having a hydroxyl group in which Rx1 to Rx4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Ry1 and Ry2 each independently represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Rz1 to Rz4 each represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; at least one of Rx1 to Rx4, Ry1 and Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an organic cation)

Abstract: A resist composition including a compound represented by formula (b1) in which Rb1 represents an aryl group which may have a substituent; Rb2 and Rb3 each independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a halogen atom, and at least one of the aryl group represented by Rb1 and the aryl group or the alkyl group represented by Rb2 or Rb3 has a substituent containing a sulfonyl group; and X? represents a counteranion.

Abstract: A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx1 to Rx4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx1 to Rx4 may be mutually bonded to form a ring structure; Ry1 and Ry2 represents a hydrogen atom or a hydrocarbon group, or Ry1 and Ry2 may be mutually bonded to form a ring structure; Rz1 to Rz4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz1 to Rz4 may be mutually bonded to form a ring structure; provided that at least one of Rx1 to Rx4, Ry1, Ry2 and Rz1 to Rz4 has an anionic group; and Mm+ represents an m-valent organic cation).

Abstract: A method for preparing a polymer compound including copolymerizing a monomer (m0-1) and a monomer (m0-2) to obtain a first polymer compound and causing the first polymer compound and an acid component to react with each other to obtain a second polymer compound. In the formulae, R1 and R2 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms and a halogenated alkyl group having 1 to 5 carbon atoms, Va01 is a divalent hydrocarbon group which may have an ether bond, na01 is an integer of 0 to 2, Ra10 is a tertiary alkyl ester-type acid dissociable group, Va02 is a divalent linking group containing a heteroatom, or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, Ra20 is an acid dissociable group, and na022 is an integer of 1 to 3.

Abstract: A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rb1 represents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yb1 represents a divalent linking group containing an ester bond (—C(?O)—O— or —O—C(?O)—), Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component which exhibits changed solubility in a developing solution under action of acid and an acid diffusion control agent, the base component including a structural unit represented by general formula (a0-1) shown below in which R represents H, C1-C5 alkyl group or C1-C5 halogenated alkyl group; Ya represents C; Xa represents a group which forms a divalent cyclic hydrocarbon group with Ya; Ra01 to Ra03 represents H, C1-C10 monovalent saturated chain hydrocarbon group or C3-C20 monovalent saturated cyclic hydrocarbon group; the acid diffusion control agent containing an acid which exhibits an acid dissociation constant of 1.5 or more.

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Abstract: A resist composition which generates an acid upon exposure and whose solubility on a developing solution changes under the action of the acid, including a polymer compound having units represented by formulas (a0-1), (a0-2), and (a0-3) in an amount of 0 to 10 mol %. In the formulas, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Va01 and Va03 are a divalent hydrocarbon group, na01 and na03 each are an integer of 0 to 2, Ra0? is a specific acid dissociable group, Va02 is a divalent linking group containing a hetero atom or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, and na022 is an integer of 1 to 3.

Abstract: A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Abstract: A method for manufacturing a polymer compound which has a constituent unit (a10) which includes a hydroxy group and a constituent unit (a1) which includes an acid decomposable group of which a polarity increases due to an effect of an acid, the method including copolymerizing a monomer for deriving a constituent unit (a0) which includes a group which protects a phenolic hydroxyl group or a hydroxy group of a carboxy group with an organic silicon compound and a monomer for deriving the constituent unit (a1) and obtaining a prepolymer which has the constituent unit (a0) and the constituent unit (a1), and selectively deprotecting the constituent unit (a0) by reacting a compound which has a fluoride anion with the prepolymer and obtaining a polymer compound which has the constituent unit (a10) and the constituent unit (a1).

Abstract: A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Abstract: A resist composition which generates an acid upon exposure and whose solubility on a developing solution changes under the action of the acid, including a polymer compound having units represented by formulas (a0-1), (a0-2), and (a0-3) in an amount of 0 to 10 mol %. In the formulas, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Va01 and Va03 are a divalent hydrocarbon group, na01 and na03 each are an integer of 0 to 2, Ra0? is a specific acid dissociable group, Va02 is a divalent linking group containing a hetero atom or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, and na022 is an integer of 1 to 3.

Abstract: A method for preparing a polymer compound including copolymerizing a monomer (m0-1) and a monomer (m0-2) to obtain a first polymer compound and causing the first polymer compound and an acid component to react with each other to obtain a second polymer compound. In the formulae, R1 and R2 are each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms and a halogenated alkyl group having 1 to 5 carbon atoms, Va01 is a divalent hydrocarbon group which may have an ether bond, na01 is an integer of 0 to 2, Ra10 is a tertiary alkyl ester-type acid dissociable group, Va02 is a divalent linking group containing a heteroatom, or a single bond, Ra07 is a monovalent organic group, na021 is an integer of 0 to 3, Ra20 is an acid dissociable group, and na022 is an integer of 1 to 3.

Abstract: Disclosed is a monomer containing an N-acylcarbamoyl group and a lactone skeleton. The monomer is exemplified by Formula (1): where Ra is selected typically from hydrogen and C1-C6 alkyl; R1 is, independently in each occurrence, selected typically from halogen and optionally halogenated C1-C6 alkyl; “A” is selected from C1-C6 alkylene, oxygen, sulfur, and non-bond; m represents an integer of 0 to 8; X represents, independently in each occurrence, specific N-acylcarbamoyl; n represents an integer of 1 to 9; and Y represents a C1-C6 divalent organic group.

Abstract: A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rb1 represents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yb1 represents a divalent linking group containing an ester bond (—C(?O)—O— or —O—C(?O)—), Vb1 represents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: A positive-type resist composition which generates an acid upon exposure and whose solubility in an alkali developing solution increases under the action of an acid, the composition including a base material component whose solubility in an alkali developing solution increases under the action of an acid; and a compound represented by the following general formula (m0): Z01 to Z04 each independently represent a substituent having electron withdrawing properties, Rb21 and Rb22 each independently represent an alkyl group, an alicyclic hydrocarbon group which may have a substituent, or a hydroxyl group, Rb1 represents an aryl group which may have a substituent, an alkyl group, or an alkenyl group, n1 and n2 represent an integer of 0 to 3, and X0? represents an organic anion.

Abstract: A method for manufacturing a polymer compound which has a constituent unit (a10) which includes a hydroxy group and a constituent unit (a1) which includes an acid decomposable group of which a polarity increases due to an effect of an acid, the method including copolymerizing a monomer for deriving a constituent unit (a0) which includes a group which protects a phenolic hydroxyl group or a hydroxy group of a carboxy group with an organic silicon compound and a monomer for deriving the constituent unit (a1) and obtaining a prepolymer which has the constituent unit (a0) and the constituent unit (a1), and selectively deprotecting the constituent unit (a0) by reacting a compound which has a fluoride anion with the prepolymer and obtaining a polymer compound which has the constituent unit (a10) and the constituent unit (a1).

Abstract: A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.

Abstract: There is provided a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, including a base component (A) which exhibits changed solubility in a developing solution by the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a0) represented by general formula (a0) shown below. In the formula, A? represents an oxygen atom, a sulfur atom or an alkylene group of 1 to 5 carbon atoms which may contain an oxygen atom or a sulfur atom; R1 represents a lactone-containing cyclic group, an —SO2— containing cyclic group or a carbonate-containing cyclic group; and W2 represents a group which is formed by polymerization reaction of a group containing a polymerizable group.