Abstract: In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2?=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2?3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.

Abstract: Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of Si?Ti?O? wherein ?, ? and ? are mole ratios of Si, Ti and O, respectively, and the ratio of ?/? ranges from 0.45 to 7.25 and the ratio of ?/(?+?) ranges from 0.80 to 1.70.

Abstract: Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of Si?Ti?O? wherein ?, ? and ? are mole ratios of Si, Ti and O, respectively, and the ratio of ?/? ranges from 0.45 to 7.25 and the ratio of ?/(?+?) ranges from 0.80 to 1.70.

Abstract: In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2?=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2?3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.

Abstract: The lowness of the initial efficiency which is a drawback of lithium secondary batteries wherein a SiO negative electrode is used is largely made better without hindering a large initial charge capacity peculiar to the lithium secondary batteries. A fall in the cycle characteristic when the thickness of the SiO layer is made large is prevented. To realize these matters, a thin film of SiO is formed, as a negative electrode active material layer, on the surface of a current collector by vacuum evaporation or sputtering. The film is preferably formed by an ion plating process. The thickness of the SiO thin film is set to 5 ?m or more. The surface roughness of the current collector is set to follows: the maximum height roughness Rz=5.0 or more. After the formation of the thin film, the film is thermally treated in a nonoxidative atmosphere.

Abstract: Greatly improved is an initial efficiency, which would be otherwise low as a fault, without reducing a magnitude of an initial charge capacity, which is a feature of a lithium secondary battery using an SiO as an negative electrode. A cycle characteristic is improved. In order to realize the improvements, a thin film of silicon oxide formed by vacuum vapor deposition or sputtering as an negative electrode active material layer 32 on a surface of a collector 31. The thin film is formed preferably by means of an ion plating method. The silicon oxide is SiOx (0.5?x<1.0) and a film thickness is in the range of from 0.1 to 50 ?m. A vacuum vapor deposition source that is used is an SiO deposit having a weight decrease percent (a rattler value) in a rattler test of 1.0% or less.

Abstract: A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 ?m, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

Abstract: A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 ?m, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

Abstract: It is an object of the present invention to provide a silicon monoxide sinter having a uniform texture, good machinability, and splash resistance, which are all required of a silicon monoxide vapor deposition material, or a silicon monoxide sinter having a diameter of at least 100 mm and the shape required of a sputtering target material, and to obtain both of these sinters stably and with good productivity. A silicon monoxide sinter with a bulk density of at least 1.68 g/cm3 can be obtained by sintering under hot pressing conditions comprising a pressing pressure of at least 15 MPa and a temperature of 1200 to 1350° C., and by using a press die which comprises an inner die divided into a plurality of segments and integrated in an integrated outer die with a gap therebetween, and a cushioning material disposed in this gap, it is possible to obtain a silicon monoxide sinter whose diameter is at least 100 mm and whose bulk density is at least 2.

Abstract: In a process for the electrolytic production of magnesium by the molten salt electrolysis of magnesium chloride using a molten salt cell bath comprised mainly of one or more salts selected from alkali metal chlorides and alkaline earth metal chlorides, the molten salt bath is enriched with magnesium chloride by suspending a magnesium oxide and/or magnesium carbonate powder to form a molten suspension and passing a chlorine-containing gas through the molten suspension at a temperature of 600.degree.-900.degree. C. so as to react the suspended powder with chlorine to form magnesium chloride. The resulting molten salt enriched with magnesium chloride can be directly introduced into the cell for electrolysis, thereby eliminating moisture absorption by the highly hygroscopic magnesium chloride. A pure magnesium can be produced with a high yield and improved current efficiency.