Abstract: A heat pipe includes a container including a container substrate and a working fluid enclosed in the container. The working fluid contains water. The heat pipe includes a first film containing tin and/or a tin alloy on at least an inner surface of the container substrate and a second film formed on at least a part of a surface of the first film and containing an oxide and/or hydroxide containing tin.

Abstract: Provided are a heat pipe capable of preventing the corrosion of a container and the generation of a hydrogen gas caused by a working fluid containing water even if the container is subjected to plastic deformation such as bending or an object to be cooled having a large amount of heat generation is thermally connected, and a method for manufacturing the heat pipe. The heat pipe includes a container including a container substrate and a working fluid enclosed in the container. The working fluid contains water. The heat pipe includes a first film containing tin and/or a tin alloy on at least an inner surface of the container substrate and a second film formed on at least a part of a surface of the first film and containing an oxide and/or hydroxide containing tin.

Abstract: A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.

Abstract: Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

Abstract: A first conveyance mechanism and a second conveyance mechanism convey a pair of two wafers to an alignment device from a wafer container via a buffer device, and then bring the wafers respectively into a first load lock chamber and a second load lock chamber after alignment. An intermediate conveyance mechanism conveys one of the pair of two wafers between the first load lock chamber and a vacuum processing chamber. The intermediate conveyance mechanism conveys the other of the pair of two wafers between the second load lock chamber and the vacuum processing chamber. The first conveyance mechanism and the second conveyance mechanism take out the pair of two wafers subjected to an implantation process from the first load lock chamber and the second load lock chamber and store the wafers into the wafer container.

Abstract: A novel film material that is capable of reducing an amount of carbon dioxide discharged during incineration for disposal is provided. The novel film material is a stretch film formed to a thickness in a range of 5 to 50 ?m. The stretch film contains a thermoplastic resin composition that includes a carbon dioxide absorbing substance in an amount in a range of 0.1 to 10 wt %.

Abstract: Provided is an ion implantation apparatus including: a vacuum processing chamber in which an ion implantation process for a wafer is performed; one or more load lock chambers that are used for bringing the wafer into the vacuum processing chamber and taking out the wafer from the vacuum processing chamber; an intermediate conveyance chamber that is disposed to be adjacent to both the vacuum processing chamber and the load lock chamber; a load lock chamber-intermediate conveyance chamber communication mechanism including a gate valve capable of sealing a load lock chamber-intermediate conveyance chamber communication port; and an intermediate conveyance chamber-vacuum processing chamber communication mechanism including a movable shielding plate capable of shielding a part or the whole of the intermediate conveyance chamber-vacuum processing chamber communication port.

Abstract: A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.

Abstract: A multilevel interconnect structure in a semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.