Abstract: A process for producing a semiconductor device and for minimizing the effects of implanted boron on a silicon dioxide insulator layer is presented. The process includes the using of a silicon nitride film having windows to define the regions of a semiconductor device, such as a bipolar transistor and isolation regions wherein the isolation region and the semiconductor regions are formed by thermal diffusion of boron using a self-alignment production process. A first mask of the silicon nitride film is formed by patterning its in the form of an endless stripe so that the influence of the reaction between the boron and silicon nitride upon the silicon nitride film is considerably reduced as compared with the conventional process. As a result, the problem of low production yield and low reliability of the semiconductor device is solved.

Abstract: A process for manufacturing a bipolar semiconductor device. An epitaxial layer is formed on a silicon wafer, and a base layer is formed by the diffusion of impurities having one conductivity type in a part of the epitaxial layer. Impurities having the opposite conductivity type are deposited in a part of the base layer, polycrystalline silicon is deposited on the entire surface of the wafer which is provided with windows for emitter, base and collector electrodes, and a gold-containing film is applied on the entire surface of the polycrystalline silicon layer. Impurities having the opposite conductivity type are deposited and driven into the base layer so as to form an emitter layer and simultaneously gold atoms are driven in through the collector windows into a collector layer of the epitaxial layer and through the base and emitter windows into the collector layer.