Abstract: A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L2 of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Abstract: Plating pre-processing is carried out before carrying out a plating process on the surface of a conducting section provided on a semiconductor wafer. A first metal film is formed on the surface of the conducting section by NiP alloy plating process. A second metal film is formed on the surface of the first metal film by immersion Ag plating process. The semiconductor wafer is diced and cut into semiconductor chips. A conductive composition containing Ag particles is applied to the surface of the second metal film which is on the front surface of the semiconductor chip. A bonding layer containing Ag particles is formed by sintering the conductive composition through heating. A metal plate is then bonded to the surface of the second metal film via the bonding layer containing Ag particles. The electronic component has high bonding strength, excellent thermal resistance and heat radiation properties.

Abstract: A thermocompression bonding structure includes a first member and a second member having a linear expansion coefficient different from that of the first member; and metal fine particles interposed between the first and second members as a bonding material to thermocompression bond the two members. The two members are disposed to apply thermal stress generating between the first member and the second member as pressurizing force on a bonding surface between the two members, and to increase temperature to thermocompression bond the first member and the second member.

Abstract: A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L2 of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Abstract: A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L2 of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Abstract: A first metal film, of which major component is copper, is formed on a surface of a conductive portion which becomes a front surface electrode of a semiconductor element. A second metal film of which major component is silver is formed on a surface of the first metal film. A metal plate, which electrically connects the conductive portion and the other members (e.g. a circuit pattern of an insulated substrate) is bonded with a surface of the second metal film via a bonding layer containing silver particles. The second metal film does not contain nickel which decreases the bonding strength between the second metal film and the bonding layer containing silver particles. With the above configuration, an electronic component having a high bonding strength, excellent heat resistance and radiation performance, and a manufacturing method for the electronic component can be provided.

Abstract: A first metal film, of which major component is copper, is formed on a surface of a conductive portion which becomes a front surface electrode of a semiconductor element. A second metal film of which major component is silver is formed on a surface of the first metal film. A metal plate, which electrically connects the conductive portion and the other members (e.g. a circuit pattern of an insulated substrate) is bonded with a surface of the second metal film via a bonding layer containing silver particles. The second metal film does not contain nickel which decreases the bonding strength between the second metal film and the bonding layer containing silver particles. With the above configuration, an electronic component having a high bonding strength, excellent heat resistance and radiation performance, and a manufacturing method for the electronic component can be provided.

Abstract: A thermocompression bonding structure includes a first member and a second member having a linear expansion coefficient different from that of the first member; and metal fine particles interposed between the first and second members as a bonding material to thermocompression bond the two members. The two members are disposed to apply thermal stress generating between the first member and the second member as pressurizing force on a bonding surface between the two members, and to increase temperature to thermocompression bond the first member and the second member.

Abstract: A semiconductor device is disclosed in which an implant board and a semiconductor element of a semiconductor mounting board are bonded and electrically connected through implant pins and which can be manufactured with high productivity. Implant pins are bonded to a semiconductor element and/or a circuit pattern of a semiconductor mounting board through cylindrical terminals press-fitted into the other ends of the implant pins. Press-fitting depth L2 of each of the implant pins into corresponding cylindrical terminals is adjustable, so that total length of the implant pin and cylindrical terminal which are press-fitted to each other matches up with the distance between the semiconductor element and/or the circuit pattern on the semiconductor mounting board and an implant board.

Abstract: Plating pre-processing is carried out before carrying out a plating process on the surface of a conducting section provided on a semiconductor wafer. A first metal film is formed on the surface of the conducting section by NiP alloy plating process. A second metal film is formed on the surface of the first metal film by immersion Ag plating process. The semiconductor wafer is diced and cut into semiconductor chips. A conductive composition containing Ag particles is applied to the surface of the second metal film which is on the front surface of the semiconductor chip. A bonding layer containing Ag particles is formed by sintering the conductive composition through heating. A metal plate is then bonded to the surface of the second metal film via the bonding layer containing Ag particles. The electronic component has high bonding strength, excellent thermal resistance and heat radiation properties.