Abstract: A magnetic detection device has stable characteristics having an area of a resist layer covering an insulating passivation layer, forming the magnetic detection element and a connection layer on a small stepped surface with high-precision, and preventing the resist layer from peeling, thereby providing a method of manufacturing the magnetic detection device. A resist layer 42 is overlapped through the insulating passivation layer 41 on an interconnection layer 35.

Abstract: The invention relates to a polyethylene resin having excellent slow crack growth property, in particular a resin having excellent durability in a pipe application, which has a specific (a) high-load melt flowrate (HLMFR; HLa), a specific (b) density (Da), and a specific (c) ?-olefin content (Ca) and in which (d) a breaking time (T) measured by notched Lander ESCR, the HLa, and the Ca satisfy log T??2.9×log HLa+5.1×log Ca+6.8. It further relates to a process for producing the resin and to a pipe and a joint each comprising the resin.

Abstract: A magnet is contained in a display housing and is supported by a slidable operating member. A control housing contains a magnetoresistance effect element. Slidable shifting of the operating member causes an external magnetic field in a positive (+) direction and an external magnetic field in a negative (?) direction to enter the magnetoresistance effect element from the magnet at different timings, thereby changing the electric resistance of the magnetoresistance effect element. Accordingly, when the operating member is slidably shifted, a switching operation between predetermined modes is performed on the basis of a change in the resistance of the magnetoresistance effect element.

Abstract: A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.

Abstract: A magnetic detection device of which an output can be completely switched over with an external magnetic field is formed in a small size. A detection circuit is formed by forming circuit elements such as an active element layer and interconnection layers on a substrate. An insulating layer is formed on the detection circuit, and a flat surface is formed on the resultant surface. A magnetic detection element that detects an external magnetic field by using a magneto-resistance effect and a fixed resistance element, which has the same electric resistance as the magnetic detection element but does not react to the external magnetic field, are formed on the flat surface. Electrode layers and a lead layer are formed on the flat surface, and the lead layer and the interconnection layer are electrically connected to each other via a bump penetrating the insulating layer.

Abstract: A magnetic detection device has stable characteristics having an area of a resist layer covering an insulating passivation layer, forming the magnetic detection element and a connection layer on a small stepped surface with high-precision, and preventing the resist layer from peeling, thereby providing a method of manufacturing the magnetic detection device. A resist layer 42 is overlapped through the insulating passivation layer 41 on an interconnection layer 35.

Abstract: A magnetic detection device capable of reducing current consumption includes a second series circuit connected in parallel to a first series circuit. The first series circuit includes a first magneto-resistance element, and a third series circuit 30 includes a second magneto-resistance element. The second series circuit includes fixed resistance elements. Electric resistance of the fixed resistance elements is larger than those of respective resistance elements included in a sensor unit, thereby reducing current consumption.

Abstract: The application provides a magnetic sensor which can suppress an irregularity of a central potential due to a change in a temperature, decrease size of the sensor, and lower the manufacturing cost of the sensor. A magneto-resistive element and fixed resister are provided on an element base and have the same configuration elements. A second magnetic layer and non-magnetic layer in the fixed resistor are reversely laminated on each other in a manner different from the magneto-resistive element, and the second magnetic layer is formed in contact with the first magnetic layer, thereby fixing the magnetization directions of the first magnetic layer and the second magnetic layer in the same direction. In this manner, the irregularity of the temperature coefficient between the magneto-resistive element and the fixed resistor is suppressed, and the irregularity of the central potential due to the change in the temperature is suppressed.

Abstract: A magnetic sensor is provided. The magnetic sensor includes a magneto-resistance element. The magneto-resistance element includes an anti-ferromagnetic layer, a fixed magnetic layer being in contact with the anti-ferromagnetic layer, and a free magnetic layer. The free magnetic layer opposes the fixed magnetic layer via a non-magnetic layer interposed therebetween. The free magnetic layer has a magnetization direction that varies in accordance with an external magnetic field. The magneto-resistance element has a narrow and longitudinal shape and has an element length L greater than an element width W that is in the range of about 1 ?m to 5 ?m.

Abstract: A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.

Abstract: A magnetic detection device of which an output can be completely switched over with an external magnetic field is formed in a small size. A detection circuit is formed by forming circuit elements such as an active element layer and interconnection layers on a substrate. An insulating layer is formed on the detection circuit, and a flat surface is formed on the resultant surface. A magnetic detection element that detects an external magnetic field by using a magneto-resistance effect and a fixed resistance element, which has the same electric resistance as the magnetic detection element but does not react to the external magnetic field, are formed on the flat surface. Electrode layers and a lead layer are formed on the flat surface, and the lead layer and the interconnection layer are electrically connected to each other via a bump penetrating the insulating layer.

Abstract: A magnetic sensor capable of properly reducing a deviation of a central potential and a method of manufacturing the magnetic sensor are provided. A conductor is connected to an end of a fixed resistance element. The conductor includes a plurality of divisional path pieces and a common path piece. A current path length in a longitudinal direction of the conductor 35 is varied by cutting a part of the common path piece, thereby adjusting the resistance.

Abstract: The application provides a magnetic sensor which can suppress an irregularity of a central potential due to a change in a temperature, decrease size of the sensor, and lower the manufacturing cost of the sensor. A magneto-resistive element and fixed resister are provided on an element base and have the same configuration elements. A second magnetic layer and non-magnetic layer in the fixed resistor are reversely laminated on each other in a manner different from the magneto-resistive element, and the second magnetic layer is formed in contact with the first magnetic layer, thereby fixing the magnetization directions of the first magnetic layer and the second magnetic layer in the same direction. In this manner, the irregularity of the temperature coefficient between the magneto-resistive element and the fixed resistor is suppressed, and the irregularity of the central potential due to the change in the temperature is suppressed.

Abstract: A coil layer, and a magnetic layer covering the coil layer via an insulating layer are provided. The magnetic layer comprises at least two magnetic films in lamination. There is adopted an inductive element including a combination of magnetic films in which, for any two magnetic films forming the magnetic layer, the value of product of multiplication of magnetic permeability and thickness of a magnetic film close to the coil layer is smaller than the value of product of multiplication of magnetic permeability and thickness of a magnetic film distant from the coil layer. This inductive element permits improvement of the superposed DC current characteristic and prevention of a decrease in inductance because magnetic fluxes generated from the coil layer are induced to a magnetic film distant from the coil layer.

Abstract: The encoder of the present invention includes at least a pair of giant magnetoresistive effect elements, in which the giant magnetoresistive effect elements to be paired are formed on a substrate in a state that the elements are connected mutually electrically with the orientations of magnetization axes of the pinned magnetic layers each facing the same direction in parallel, a magnetic coding member is rotatably supported to face the giant magnetoresistive effect elements on the substrate, and the magnetic coding member has a plurality of magnetic poles formed along the direction of rotation of itself.

Abstract: The present invention is characterized in that a first giant magnetoresistive effect element and a second giant magnetoresistive effect element are provided along a first straight line with the magnetization of the pinned magnetic layer c oriented in a fixed direction, and that a third giant magnetoresistive effect element and a fourth giant magnetoresistive effect element are provided along a second straight line, which is parallel to the first straight line, with the magnetization of the pinned magnetic layer oriented 180° opposite to the directions of magnetization of the pinned magnetic layers in the first and second giant magnetoresistive effect elements.

Abstract: A magnet layer or antiferromagnetic thin film layer composed of a thin film serving as a bias magnetic field applying member is provided at both ends of a magnetic thin film having a magneto-impedance effect so that a bias magnetic field Hbi is applied to the magnetic thin film layer in parallel with the direction of application of an external magnetic field Hex to the magnetic thin film layer. As the magnetic thin film layer, a soft magnetic material having the composition ColTamHfn, FehRiOl, (Co1-vTv)xMyOzXw, T100-d-e-f-gXdMeZfQg or T100-p-q-f-gSipAlqMeZfQg is used.

Abstract: Disclosed is a magnetic film forming method of forming a magnetic film on a substrate by preparing a material A formed of oxide of an element T of at least one kind of Fe, Co, and Ni and a material B formed of oxide of an element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and making a target by sintering the powders of the material A and the material B or preparing the material A formed of oxide of the element T of at least one kind of Fe, Co, and Ni, the material B formed of oxide of the element M of at least one kind selected from Ti, Zr, Hf, Nb, Ta, Cr, Mo, Si, P, C, W, B, Al, Ga, Ge, and rare earth elements and a material C formed of an element S of at least one kind of Fe, Co, and Ni and making a target by sintering the powders of the material A, the material B and the material C; disposing the target in a film forming apparatus so that the target confronts a substrate; and forming the magnetic film on the substrate.

Abstract: A magnetoresistive sensor includes a plurality of multilayered magnetoresistive films arranged in parallel. Each multilayered magnetoresistive film includes at least one pinned ferromagnetic layer and at least one free magnetic layer. Reversion of magnetization of the pinned ferromagnetic layer is pinned, whereas the vector of magnetization of the free ferromagnetic layer freely reverses in response to an external magnetic field. The vectors of magnetization of the pinned ferromagnetic layers in two adjacent multilayered magnetoresistive films are substantially antiparallel to each other.

Abstract: The potentiometer of the present invention includes at least a pair of giant magnetoresistive effect elements, in which the giant magnetoresistive effect elements to be paired are formed on a substrate in a state that the elements are connected mutually electrically with the orientations of magnetization axes of the pinned magnetic layers facing 180° opposite each other, and a magnetic coding member is rotatably provided to face the giant magnetoresistive effect elements on the substrate, the magnetic coding member is disposed in such a manner that the center of rotation of the magnetic coding member passes through an intermediate position of the giant magnetoresistive effect elements to be paired, and the magnetic coding member has at least two magnetic poles formed along the direction of rotation of itself.