Abstract: A plasma processing apparatus includes a processing vessel; a placing table, serving as a lower electrode, disposed within the processing vessel; an upper electrode serving as a facing electrode of the placing table; a plasma processor configured to form a gas within the processing vessel into plasma by supplying a high frequency power and to process a processing target object on the placing table with the plasma; a cover member configured to cover the upper electrode from thereabove; a cooler provided within the cover member and configured to cool the upper electrode with a coolant having a temperature lower than a dew point temperature of exterior air outside the processing vessel; and a gas supply configured to supply a low-dew point gas having a dew point temperature lower than the dew point temperature of the exterior air into a space surrounded by the cover member and the upper electrode.

Abstract: A substrate processing apparatus includes a chamber and units disposed above or on the chamber, at least one unit including a first groove. The substrate processing apparatus includes a lifting mechanism including at least one second groove, the lifting mechanism being configured to raise and lower each of the units. The units are configured to be raised and lowered in a state of being secured to the lifting mechanism, upon occurrence of a condition in which a fixing member is inserted into the first groove of the at least one unit and the second groove of the lifting mechanism.

Abstract: A substrate processing apparatus includes a chamber and units disposed above or on the chamber, at least one unit including a first groove. The substrate processing apparatus includes a lifting mechanism including at least one second groove, the lifting mechanism being configured to raise and lower each of the units. The units are configured to be raised and lowered in a state of being secured to the lifting mechanism, upon occurrence of a condition in which a fixing member is inserted into the first groove of the at least one unit and the second groove of the lifting mechanism.

Abstract: A chamber includes a side wall and a bottom portion, and is provided with at least one gas supply port and multiple exhaust ports. Some or all of the exhaust ports are formed in the bottom portion. A substrate support is placed inside the chamber. An annular baffle plate is placed near the substrate support to cover the exhaust ports when viewed from a top, and a gap is formed between the annular baffle plate and the substrate support. A pipe unit includes a collection pipe unit, multiple first pipes and a second pipe. The collection pipe unit includes a side wall, and the side wall is provided with multiple first openings and a second opening located above the first openings. The multiple first pipes extend from the first openings to the exhaust ports, respectively. The second pipe extends from the second opening to the vacuum pump.

Abstract: A gas supply ring for use in a substrate processing apparatus includes an inner face, an outer face, a first face between the inner face and the outer face, and a second face between the inner face and the outer face and opposite to the first face. The outer face has at least one gas inlet and the first face has an outer groove in communication with the at least one gas inlet. The second face has first and second middle grooves in communication with the outer groove. The first face further has first to fourth inner grooves disposed medial to the outer groove. The inner face has a plurality of gas outlets and each of the gas outlets is in communication with any one of the first to fourth inner grooves.

Abstract: A plasma processing apparatus includes a processing vessel; a placing table, serving as a lower electrode, disposed within the processing vessel; an upper electrode serving as a facing electrode of the placing table; a plasma processor configured to form a gas within the processing vessel into plasma by supplying a high frequency power and to process a processing target object on the placing table with the plasma; a cover member configured to cover the upper electrode from thereabove; a cooler provided within the cover member and configured to cool the upper electrode with a coolant having a temperature lower than a dew point temperature of exterior air outside the processing vessel; and a gas supply configured to supply a low-dew point gas having a dew point temperature lower than the dew point temperature of the exterior air into a space surrounded by the cover member and the upper electrode.

Abstract: A plasma processing apparatus includes a processing vessel; a placing table, serving as a lower electrode, disposed within the processing vessel; an upper electrode serving as a facing electrode of the placing table; a plasma processor configured to form a gas within the processing vessel into plasma by supplying a high frequency power and to process a processing target object on the placing table with the plasma; a cover member configured to cover the upper electrode from thereabove; a cooler provided within the cover member and configured to cool the upper electrode with a coolant having a temperature lower than a dew point temperature of exterior air outside the processing vessel; and a gas supply configured to supply a low-dew point gas having a dew point temperature lower than the dew point temperature of the exterior air into a space surrounded by the cover member and the upper electrode.

Abstract: A plasma processing apparatus includes a processing vessel; a placing table, serving as a lower electrode, disposed within the processing vessel; an upper electrode serving as a facing electrode of the placing table; a plasma processor configured to form a gas within the processing vessel into plasma by supplying a high frequency power and to process a processing target object on the placing table with the plasma; a cover member configured to cover the upper electrode from thereabove; a cooler provided within the cover member and configured to cool the upper electrode with a coolant having a temperature lower than a dew point temperature of exterior air outside the processing vessel; and a gas supply configured to supply a low-dew point gas having a dew point temperature lower than the dew point temperature of the exterior air into a space surrounded by the cover member and the upper electrode.