Abstract: This probe production method is a method of producing a probe (101) having a coating layer (104) on a surface thereof, in which the coating layer (104) is formed on a surface of a base material (103) having a sharp tip end portion (103a) using a gas phase method.

Abstract: The present invention aims to provide a polishing composition which allows high-speed polishing of a barrier film and an inter-layer dielectric film along with a wiring metal at the same time, while preventing dishing and erosion, and particularly maintaining the flatness of metal film. The chemical-mechanical polishing composition of the present invention comprises a dicarboxylic acid having 7 to 13 carbon atoms, an oxidizing agent, an abrasive and water.

Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.

Abstract: The present invention provide a chemical-mechanical polishing composition for inhibiting dishing and erosion as well as rapidly polishing an insulating film and barrier film at the same time while maintaining the flatness of the substrate surface polished. The present chemical-mechanical polishing composition comprises methanesulfonic acid, an alkali metal ion, an oxidizing agent, a silica abrasive and water, and has a pH of 8 to 12.

Abstract: The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.

Abstract: A polishing composition which achieves surfaces with high planarity and the reduction of corrosions in the wiring metal surface at the same time is provided. Such compositions include (A) an oxidizing agent; (B) at least one acid selected from an amino acid, a carboxylic acid of no more than 8 carbon atoms, and an inorganic acid; (C) a sulfonic acid having a concentration of 0.01% by mass or more and having an alkyl group of 8 or more carbon atoms; (D) a fatty acid having a concentration of 0.001% by mass or more and having an alkyl group of 8 or more carbon atoms; and (E) at least one compound selected from a pyridine carbonyl compound, a nonionic water-soluble polymer, 2-pyrrolidone, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, gramine, adenine, N,N?-diisopropylethylenediamine, N,N?-bis(2-hydroxyethyl)ethylenediamine, N,N?-dibenzylethylenediamine, and N,N?-diphenylethylenediamine.

Abstract: The present invention provides a method for producing an abrasive composition, which can control dishing, a method for polishing a substrate using the abrasive composition, and a method for producing a substrate. In the method for producing an abrasive composition, two kinds of preliminary compositions (A) and (B) having different compositions are mixed in different mixing ratios to produce plural kinds of abrasive compositions, wherein a composition containing (a) an abrasive grain, (b) an oxidizing agent, (c) one or more acids selected from the group consisting of amino acids, organic acids and inorganic acids, and (d) a surfactant is used as the preliminary composition (A); and a composition containing (a) an abrasive grain and (b) an oxidizing agent is used as the preliminary composition (B). The preliminary composition (B) may contain the foregoing acid (c) and surfactant (d).

Abstract: The present invention provide a chemical-mechanical polishing composition for inhibiting dishing and erosion as well as rapidly polishing an insulating film and barrier film at the same time while maintaining the flatness of the substrate surface polished. The present chemical-mechanical polishing composition comprises methanesulfonic acid, an alkali metal ion, an oxidizing agent, a silica abrasive and water, and has a pH of 8 to 12.

Abstract: The present invention aims to provide a polishing composition which allows high-speed polishing of a barrier film and an inter-layer dielectric film along with a wiring metal at the same time, while preventing dishing and erosion, and particularly maintaining the flatness of metal film. The chemical-mechanical polishing composition of the present invention comprises a dicarboxylic acid having 7 to 13 carbon atoms, an oxidizing agent, an abrasive and water.

Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.

Abstract: A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, including an aqueous solvent and at least one amino acid having two or more nitrogen atoms.

Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.

Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.

Abstract: A polishing composition for polishing copper and tantalum or a tantalum compound provided on a semiconductor wafer, including an aqueous solvent and at least one amino acid having two or more nitrogen atoms.

Abstract: The present invention provides an LSI device polishing composition containing water, abrasive grains, an organic acid, and an oxidizing agent, and having a pH of 5.5-10.0 adjusted by an alkaline substance, the LSI device polishing composition being used for polishing a copper-containing metal wiring layer in which copper is deposited on an insulating film via barrier metal formed of Ta or TaN; and a method for producing LSI devices by use of the polishing composition. During polishing of a barrier metal such as Ta or TaN and a copper wiring layer, the rate of polishing Ta or TaN can be enhanced, to thereby prevent dishing and erosion.