Abstract: A projection exposure apparatus (10) includes a mask mark illumination light source (21) capable of irradiating a mask mark (MM) with exposure light itself or a first alignment light (L1) having substantially the same wavelength as the exposure light, and an alignment unit (30) having a work mark illumination light source (31) capable of irradiating a work mark (WM) with second alignment light (L2) having a wavelength different from the wavelength of the exposure light, an imaging device (32), and an imaging optical system (40).

Abstract: A working machine includes a support bracket attached to a machine body, a first mounting member provided to the support bracket and formed of an elastic member, a first cooler and a second cooler arranged in parallel to a horizontal direction and mounted on the support bracket with the first mounting member, a fitting bracket detachably fitted to upper portions of the first and second coolers, and a second mounting member arranged between the fitting bracket and the first and second coolers and formed of elastic member.

Abstract: The disclosed art includes: a machine body; an operator's seat mounted on the machine body and including a seat part and a backrest part; a manipulator base disposed on a lateral side of the operator's seat; and a housing body for housing a printed material therein, and the housing body is disposed forward of the backrest part and on the opposite side of the manipulator base from the operator's seat.

Abstract: A working machine includes a support bracket attached to a machine body, a first mounting member provided to the support bracket and formed of an elastic member, a first cooler and a second cooler arranged in parallel to a horizontal direction and mounted on the support bracket with the first mounting member, a fitting bracket detachably fitted to upper portions of the first and second coolers, and a second mounting member arranged between the fitting bracket and the first and second coolers and formed of elastic member.

Abstract: Disclosed herein is a capacitive element formed by multilayer wirings, wherein a total capacitance, intralayer capacitance and interlayer capacitance are calculated for a plurality of device structures by changing parameters relating to the multilayer wirings in an integrated circuit, a device structure is identified, from among the plurality of device structures, whose difference in the total capacitance between the device structures is equal to or less than a predetermined level and at least either of whose ratio of the intralayer capacitance to the total capacitance or ratio of the interlayer capacitance to the total capacitance satisfies a predetermined condition, and the parameters of the device structure satisfying the predetermined condition are determined as the parameters of the multilayer wirings.

Abstract: A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).

Abstract: A measuring apparatus measuring a surface shape of a target includes a projection optical system to radiate a line beam on the target, an imaging device to acquire a reflected line beam reflected from the target, an optical imaging system to cause the reflected line beam to form an image on a receiving surface of the imaging device to acquire a shape of the line beam on the target, and a splitting mechanism to split the reflected line beam so as to acquire the shape of the line beam on the target at different positions in an extending direction of the line beam and guide the split reflected line beams to the imaging device. A plurality of segments are set on the receiving surface while each segment in which at least one region is set as a reception region is partitioned into a plurality of regions, and the optical imaging system causes the split reflected line beams to form images on the reception regions in the different segments, respectively.

Abstract: An exposure apparatus which forms a predetermined mask pattern on a target workpiece through exposure by: casting exposure light upon a mask in which the pattern and a mask-side alignment mark are formed, and forming an image of the mask on the target workpiece by projecting the exposure light, which passes the mask, on the target workpiece through a projection lens, includes: an alignment lighting unit configured to cast, as alignment light, light in a wavelength range included in the exposure light onto the mask-side alignment mark of the mask; and an alignment camera unit including an image pickup device for capturing images, and configured to receive the incident alignment light coming from the alignment lighting unit through the mask and the projection lens.

Abstract: A measuring apparatus for measuring a surface shape of a target, includes a projection system to radiate a line beam on the target, an imaging device to acquire a reflected line beam reflected from the target, a plurality of imaging systems each configured to cause the reflected line beam to form an image on a receiving surface of the imaging device so that a shape of the line beam on the target is acquired and a splitting mechanism to split the reflected line beam and guide the split reflected line beam to the imaging device. The imaging systems have different optical settings for the object in the target, a plurality of segments are set on the receiving surface while each of the segments in each of which at least one region is set as a reception region is partitioned into a plurality of regions, and the imaging system causes the reflected line beams split by the splitting mechanism to form images on the reception regions in the different segments, respectively.

Abstract: A measuring apparatus measuring a surface shape of a target includes a projection optical system to radiate a line beam on the target, an imaging device to acquire a reflected line beam reflected from the target, an optical imaging system to cause the reflected line beam to form an image on a receiving surface of the imaging device to acquire a shape of the line beam on the target, and a splitting mechanism to split the reflected line beam so as to acquire the shape of the line beam on the target at different positions in an extending direction of the line beam and guide the split reflected line beams to the imaging device. A plurality of segments are set on the receiving surface while each segment in which at least one region is set as a reception region is partitioned into a plurality of regions, and the optical imaging system causes the split reflected line beams to form images on the reception regions in the different segments, respectively.

Abstract: A solid-state imaging device having a plurality of light-receiving sections which are disposed in a substrate and which generate charge in response to incident light, a planarizing layer which covers predetermined elements disposed on the substrate to perform planarization, a plurality of signal lines disposed above the planarizing layer and a waveguide which guides incident light to each of the light-receiving sections, the waveguide passing through the space between the plurality of signal lines.

Abstract: Disclosed herein is a capacitive element formed by multilayer wirings, wherein a total capacitance, intralayer capacitance and interlayer capacitance are calculated for a plurality of device structures by changing parameters relating to the multilayer wirings in an integrated circuit, a device structure is identified, from among the plurality of device structures, whose difference in the total capacitance between the device structures is equal to or less than a predetermined level and at least either of whose ratio of the intralayer capacitance to the total capacitance or ratio of the interlayer capacitance to the total capacitance satisfies a predetermined condition, and the parameters of the device structure satisfying the predetermined condition are determined as the parameters of the multilayer wirings.

Abstract: In order to form an aluminum system wiring that does not peel off on an insulating film containing fluorine and to improve the reliability thereof, a semiconductor device according to the present invention includes an insulating film (14) containing fluorine formed on a substrate (11), a titanium aluminum alloy film (17a) formed on the insulating film (14) containing fluorine, and a metallic film (17b) comprising aluminum or an aluminum alloy formed on the titanium aluminum alloy film (17a).

Abstract: A solid-state imaging device has: an imaging region in which a plurality of pixels each having a photoelectric conversion element are arranged, and a color filter. The color filter includes: filter components of a first color (2G), filter components of a second color (2R) formed by self-alignment and each being surrounded by the filter components of the first color (2G), and filter components of a third color (2B) formed by self-alignment and each being surrounded by the filter components of the first color (2G).

Abstract: A solid-state imaging device having a plurality of light-receiving sections which are disposed in a substrate and which generate charge in response to incident light, a planarizing layer which covers predetermined elements disposed on the substrate to perform planarization, a plurality of signal lines disposed above the planarizing layer and a waveguide which guides incident light to each of the light-receiving sections, the waveguide passing through the space between the plurality of signal lines.

Abstract: By improving the embedding property of a light-transmissive material constituting a waveguide, light collection efficiency is improved, and reliability of a solid-state imaging device is ensured. In a solid-state imaging device including a light-receiving section (1) which performs photoelectric conversion in response to receipt of light and a waveguide (20) composed of a light-transmissive material formed in an insulating film 5 which covers a substrate provided with the light-receiving section (1), in which the waveguide (20) guides incident light from outside to the light-receiving section (1), the waveguide (20) is provided with a forward tapered portion in which the size of the planar shape viewed from the direction of incident light decreases from the light incident side surface toward the light-receiving section.

Abstract: The present invention provides a method of manufacturing a semiconductor device and a semiconductor device that allow use of interlayer and interconnect insulating films having a low dielectric constant in forming a dual damascene structure. A first insulating film, a second insulating film, a first-mask forming layer, a second-mask forming layer, a third-mask forming layer, and a fourth-mask forming layer are sequentially deposited over a substrate. The fourth-mask forming layer is patterned to form a fourth mask having an interconnect trench pattern. After a resist mask is formed on the fourth mask, the layers to the second insulating film are etched to open via holes. The third-mask forming layer is etched through the fourth mask to thereby form a third mask having the interconnect trench pattern and to extend the via holes downward partway across the first insulating film.

Abstract: A method for surface inspection, comprising the step of projecting at least two laser beams with different wavelengths to a same point to be inspected via a same projecting lens, the step of setting incident angles of the two laser beams so that fluctuations of values of reflectivity of the laser beams are complementary to each other, and the step of detecting reflected scattered light components.

Abstract: A semiconductor device and a method of manufacturing the device includes a first buried wiring, a second buried wiring formed as a layer different from the first buried wiring, a contact hole, which is formed between the first buried wiring and the second buried wiring and is filled with a wiring material for electrically connecting the first buried wiring and the second buried wiring therethrough, and a dummy hole, which has a hole diameter different from the contact hole, is so formed in vicinity of the contact hole as to connect the first buried wiring, and is filled with a wiring material therein.

Abstract: The present invention provides a method of manufacturing a semiconductor device and a semiconductor device that allow use of interlayer and interconnect insulating films having a low dielectric constant in forming a dual damascene structure. A first insulating film, a second insulating film, a first-mask forming layer, a second-mask forming layer, a third-mask forming layer, and a fourth-mask forming layer are sequentially deposited over a substrate. The fourth-mask forming layer is patterned to form a fourth mask having an interconnect trench pattern. After a resist mask is formed on the fourth mask, the layers to the second insulating film are etched to open via holes. The third-mask forming layer is etched through the fourth mask to thereby form a third mask having the interconnect trench pattern and to extend the via holes downward partway across the first insulating film.