Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n+ source region (2) and an n+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Abstract: In a method of fabricating a SiC semiconductor device, a surface of a SiC layer (5, 48, 102) is processed into a cleaned surface terminated at Si. An oxide film (7, 49, 105) is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO2/SiC cleaned interface.

Abstract: In a method of fabricating a SiC semiconductor device, a surface of a SiC layer (5, 48, 102) is processed into a cleaned surface terminated at Si. An oxide film (7, 49, 105) is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO2/SiC cleaned interface.

Abstract: The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16°. An n+ source region (2) and an n+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be separated from each other. A gate electrode (5) is formed on a gate oxide film (4) on the principal surface of the p-type SiC substrate (1).

Abstract: In a process of producing a SiC device, a Si layer is formed on the surface of a SiC substrate, and the Si layer is removed from the surface of the SiC substrate by supplying oxygen gas to the Si layer in a high ambient temperature and a low ambient pressure. The pressure is set at 1×10−2 to 1×10−6 Pa. Thus a cleaned surface of the SiC substrate, not contaminated by carbon and the like in atmospheric air, can be provided. Preferably, the oxygen pressure and temperature are set at about 10−6 Pa and 1000° C. for removing the Si layer. Thereafter, the oxygen is further supplied to raise the pressure to about 104 Pa to form an oxide film on the cleaned SiC substrate. Thus, the SiC substrate is cleaned and then formed with the oxide layer in the same chamber by changing the ambient pressure but without changing the ambient temperature.

Abstract: In a method of fabricating a SiC semiconductor device, a surface of a SiC layer (5, 48, 102) is processed into a cleaned surface terminated at Si. An oxide film (7, 49, 105) is formed on the cleaned surface of the SiC layer. The SiC layer with the oxide film is subjected to thermal oxidation at a temperature in a range of 700° C. to 900° C. so that only terminal Si at the cleaned surface of the SiC layer is oxidated and an interface between the oxide film and the SiC layer becomes an SiO2/SiC cleaned interface.

Abstract: In a process of producing a SiC device, a Si layer is formed on the surface of a SiC substrate, and the Si layer is removed from the surface of the SiC substrate by supplying oxygen gas to the Si layer in a high ambient temperature and a low ambient pressure. The pressure is set at 1×10−2 to 1×10−6 Pa. Thus a cleaned surface of the SiC substrate, not contaminated by carbon and the like in atmospheric air, can be provided. Preferably, the oxygen pressure and temperature are set at about 10−6 Pa and 1000° C. for removing the Si layer. Thereafter, the oxygen is further supplied to raise the pressure to about 104 Pa to form an oxide film on the cleaned SiC substrate. Thus, the SiC substrate is cleaned and then formed with the oxide layer in the same chamber by changing the ambient pressure but without changing the ambient temperature.