Abstract: A wave absorber of the present invention includes a sequentially laminated structure including an conductor layer (11) made of a conductive material; a first dielectric layer (polycarbonate substrate (12) and bismaleimide-triazine substrate (13)) made of one layer or a multilayer of a dielectric material; and a patterned layer (14) including a plurality of a pattern made of the conductive material, wherein the conductor layer, the first dielectric layer, and the patterned layer are laminated sequentially, and each pattern in the patterned layer (14) is different from other adjacent patterns with respect to at least one of size and shape. Therefore, the wave absorber has sufficient reflection-attenuating capability to prevent communication failure caused by a reflection of a radio wave and so on, can be thin-sized and reduced in weight, and has a wide-band attenuation property.

Abstract: An inverted-F-shaped antenna pattern is formed as a driven element on the obverse-side surface of a glass-epoxy circuit board. This antenna pattern has a feeding conductor pattern connected to a feeding transmission path formed on the obverse-side surface of the circuit board and a grounding conductor pattern connected to a grounding conductor portion formed on the obverse-side surface of the circuit board. Moreover, an inverted-L-shaped antenna pattern is formed as a passive element on the reverse-side surface of the circuit board. This antenna pattern has a grounding conductor pattern connected to a grounding conductor portion formed on the reverse-side surface of the circuit board. Forming the inverted-F-shaped antenna pattern and the inverted-L-shaped antenna pattern so as to overlap each other yields a laminate pattern antenna that is usable in a wide frequency range.

Abstract: An inverted-F-shaped antenna pattern 1 is formed as a driven element on a surface of a glass-epoxy circuit board 4. This antenna pattern 1 has a feeding conductor pattern 1b connected to a feeding transmission path 2 formed on the surface of the circuit board 4 and a grounding conductor pattern 1c connected to a grounding conductor portion 3 formed on the surface of the circuit board 4. The feeding conductor pattern 1b is formed so as to have a tapered shape so that its width increases gradually from where it is connected to the feeding transmission path 2 toward an elongate pattern 1a of the antenna pattern 1.

Abstract: An inverted-F-shaped antenna pattern 1 is formed as a driven element on a surface of a glass-epoxy circuit board 4. This antenna pattern 1 has a feeding conductor pattern 1b connected to a feeding transmission path 2 formed on the surface of the circuit board 4 and a grounding conductor pattern 1c connected to a grounding conductor portion 3 formed on the surface of the circuit board 4. The feeding conductor pattern 1b is formed so as to have a tapered shape so that its width increases gradually from where it is connected to the feeding transmission path 2 toward an elongate pattern 1a of the antenna pattern 1.

Abstract: An inverted-F-shaped antenna pattern is formed as a driven element on the obverse-side surface of a glass-epoxy circuit board. This antenna pattern has a feeding conductor pattern connected to a feeding transmission path formed on the obverse-side surface of the circuit board and a grounding conductor pattern connected to a grounding conductor portion formed on the obverse-side surface of the circuit board. Moreover, an inverted-L-shaped antenna pattern is formed as a passive element on the reverse-side surface of the circuit board. This antenna pattern has a grounding conductor pattern connected to a grounding conductor portion formed on the reverse-side surface of the circuit board. Forming the inverted-F-shaped antenna pattern and the inverted-L-shaped antenna pattern so as to overlap each other yields a laminate pattern antenna that is usable in a wide frequency range.

Abstract: An impedance matching device includes a variable capacitor constituted by a non-linear dielectric thin film and an upper electrode disposed on a lower electrode formed on a substrate. The non-linear dielectric thin film is formed by a deposition, screen-printing, electroplating, or other technique, and changes its relative dielectric constant according to applied voltage. Therefore, the capacity of the variable capacitor is controlled and the impedance is matched, by simply controlling the applied voltage across the non-linear dielectric thin film. Consequently, the arrangement makes it possible to cut down the impedance matching device in size and cost, compared to an arrangement incorporating a capacitor and a coil for adjustment, effects a much simpler matching operation, and facilitates a manufacturing process.

Abstract: The present invention provides a dielectric thin film capacitor element in which leak current may be suppressed from increasing over time while energizing at high temperature and which has excellent insulating quality and reliability and a manufacturing method thereof. The dielectric thin film capacitor element is constructed by forming a lower electrode, a dielectric thin film and an upper electrode one after another on a substrate, wherein the dielectric thin film capacitor element is characterized in that the dielectric thin film is made of an oxide material composed of at least titanium and strontium and containing erbium.

Abstract: A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm thick, is formed by sputtering or another deposition method. After the film is formed, evacuation of the film forming chamber is suspended, and oxygen gas is introduced into the chamber. The film is oxidized after its formation by maintaining the film in the oxygen atmosphere for a period of time, which can include cooling steps. The resulting dielectric thin film has excellent dielectric properties, such as a high dielectric constant and great dielectric strength.

Abstract: In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.

Abstract: A dielectric thin film device is constructed by a dielectric thin film using lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 with 0<x<1 and 0<y<1. This dielectric thin film element has excellent electric characteristics of a leak electric current and fatigue characteristics, etc. The dielectric thin film element may have a thermally grown silicon dioxide film, a titanium film, a platinum lower electrode, a film of lead erbium zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.3 and a platinum upper electrode. These films and electrodes are sequentially formed on an n-type silicon substrate. In this case, 0.45.ltoreq.x.ltoreq.0.75 and 0.05.ltoreq.y.ltoreq.0.1 are set. A method for manufacturing a dielectric thin film has the steps of coating a substrate with a precursor solution of erbium lead zirconate titanate represented by (Pb.sub.1-y Er.sub.y) (Zr.sub.x Ti.sub.1-x)O.sub.

Abstract: The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.