Abstract: A bonded body is provided that is formed by bonding a metal member formed from copper, nickel, or silver, and an aluminum alloy member formed from an aluminum alloy of which a solidus temperature is lower than a eutectic temperature of aluminum and a metal element that constitutes the metal member. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A chill layer, in which a Si phase of which an aspect ratio of a crystal grain is 2.5 or less and a crystal grain diameter is 15 ?m or less is dispersed, is formed on a bonding interface side with the metal member in the aluminum alloy member. The thickness of the chill layer is set to 50 ?m or greater.

Abstract: A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cm?1 to 4,000 cm?1 indicated by IA, and a maximum value of intensity in a wavenumber range of 450 cm?1 to 550 cm?1 is indicated by IB, IA/IB is 1.1 or greater.

Abstract: A bonded body is provided in which an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other. The aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 1 mass % to 25 mass %. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member. A Mg-concentrated layer, in which a concentration of Mg is to 3 mass % or greater, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 ?m to 30 ?m.

Abstract: A bonded body is provided that is formed by bonding a metal member formed from copper, nickel, or silver, and an aluminum alloy member formed from an aluminum alloy of which a solidus temperature is lower than a eutectic temperature of aluminum and a metal element that constitutes the metal member. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A chill layer, in which a Si phase of which an aspect ratio of a crystal grain is 2.5 or less and a crystal grain diameter is 15 ?m or less is dispersed, is formed on a bonding interface side with the metal member in the aluminum alloy member. The thickness of the chill layer is set to 50 ?m or greater.

Abstract: A method of producing a bonded body is disclosed in which a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy are bonded to each other, the method including: a laminating step of laminating the ceramic member and the Cu member in a state where a Cu—P-based brazing filler material containing 3 mass % to 10 mass % of P and an active metal material are interposed therebetween; and a heating step of heating the ceramic member and the Cu member which are laminated.

Abstract: A method of manufacturing a bonded body is provided in which a copper member (13B) formed from copper or a copper alloy, and an aluminum member (31) formed from an aluminum alloy in which a Si concentration is set in a range of 1 mass % to 25 mass % are bonded to each other. In the aluminum member before the bonding, D90 of an equivalent circle diameter of a Si phase at a bonding surface with the copper member is set in a range of 1 ?m to 8 ?m, and the aluminum member and the copper member are subjected to solid-phase diffusion bonding.

Abstract: A bonded body is provided in which an aluminum alloy member formed from an aluminum alloy, and a metal member formed from copper, nickel, or silver are bonded to each other. The aluminum alloy member is constituted by an aluminum alloy in which a concentration of Si is in a range of 1 mass % to 25 mass %. The aluminum alloy member and the metal member are subjected to solid-phase diffusion bonding. A compound layer, which is formed through diffusion of Al of the aluminum alloy member and a metal element of the metal member, is provided at a bonding interface between the aluminum alloy member and the metal member. A Mg-concentrated layer, in which a concentration of Mg is to 3 mass % or greater, is formed at the inside of the compound layer, and the thickness of the Mg-concentrated layer is in a range of 1 ?m to 30 ?m.

Abstract: A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.

Abstract: The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t1 of the circuit layer and a thickness t2 of the second aluminum layer of the metal layer satisfy t1<t2.

Abstract: A power module substrate with a Ag underlayer of the invention includes: a circuit layer that is formed on one surface of an insulating layer; and a Ag underlayer that is formed on the circuit layer, in which the Ag underlayer is composed of a glass layer that is formed on the circuit layer side and a Ag layer that is formed by lamination on the glass layer, and regarding the Ag underlayer, in a Raman spectrum obtained by a Raman spectroscopy with incident light made incident from a surface of the Ag layer on a side opposite to the glass layer, when a maximum value of intensity in a wavenumber range of 3,000 cm?1 to 4,000 cm?1 indicated by IA, and a maximum value of intensity in a wavenumber range of 450 cm?1 to 550 cm?1 is indicated by IB, IA/IB is 1.1 or greater.

Abstract: A power-module substrate including a circuit layer having a first aluminum layer bonded on one surface of a ceramic substrate and a first copper layer bonded on the first aluminum layer by solid-phase-diffusion bonding, and a metal layer having a second aluminum layer made from a same material as the first aluminum layer and bonded on the other surface of the ceramic substrate and a second copper layer made from a same material as the first copper layer and bonded on the second aluminum layer by solid-phase-diffusion bonding, in which a thickness t1 of the first copper layer is 1.7 mm to 5 mm, a sum of the thickness t1 of the first copper layer and a thickness t2 of the second copper layer is 7 mm or smaller, and a ratio t2/t1 is larger than 0 and 1.2 or smaller except for a range of 0.6 to 0.8.

Abstract: The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a solidus temperature is set to be less than a eutectic temperature of a metal element that constitutes the metal member and aluminum. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

Abstract: The present invention is a bonded body in which an aluminum member constituted by an aluminum alloy, and a metal member constituted by copper, nickel, or silver are bonded to each other. The aluminum member is constituted by an aluminum alloy in which a Si concentration is set to be in a range of 1 mass % to 25 mass %. A Ti layer is formed at a bonding portion between the aluminum member and the metal member, and the aluminum member and the Ti layer, and the Ti layer and the metal member are respectively subjected to solid-phase diffusion bonding.

Abstract: A heat-sink-attached-power module substrate (1) has a configuration such that either one of a metal layer (13) and a heat sink (31) is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer (13) and the heat sink (31) are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer (13) and the heat sink (31), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer (13) composed of copper or a copper alloy and heat sink (31) composed of copper or a copper alloy in a layered form along the interface.

Abstract: The power module substrate includes a circuit layer that is formed on a first surface of a ceramic substrate, and a metal layer that is formed on a second surface of the ceramic substrate, in which the metal layer has a first aluminum layer that is bonded to the second surface of the ceramic substrate and a first copper layer that is bonded to the first aluminum layer by solid-phase diffusion bonding.

Abstract: There is provided a bonded body of the invention in which a ceramic member formed of a ceramic containing Al and a Cu member formed of Cu or a Cu alloy are bonded to each other, in which a bonding portion is formed between the ceramic member and the Cu member, an active metal compound region formed of a compound containing active metal is formed on the bonded portion on the ceramic member side, and an Al concentration of the bonding portion having a thickness range of 0.5 ?m to 3 ?m from one surface of the active metal compound region on the Cu member side towards the Cu member side is in a range of 0.5 at % to 15 at %.

Abstract: A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

Abstract: A power module substrate includes an insulating layer, a circuit layer that is formed on a first surface of the insulating layer, and a metal layer that is formed on a second surface of the insulating layer, in which a first base layer is laminated on a surface of the metal layer on the opposite side of the surface to which the insulating layer is provided, and the first base layer has: a first glass layer that is formed at the interface with the metal layer; and a first Ag layer that is laminated on the first glass layer.

Abstract: The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic member and the Cu member, and intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

Abstract: A power module has a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 ?m from the surface of the circuit layer in the solder layer is 10 ?m or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test.