Abstract: A composition containing: a compound (2); a metal compound; and at least one selected from a compound (3) and a compound (4), the compound (3) being contained in an amount of 10000 ppm or less relative to the compound (2), the compound (4) being contained in an amount of 10000 ppm or less relative to the compound (2), the compound (2) being represented by the following formula (2): the compound (3) being represented by the following formula (3): and the compound (4) being represented by the following formula (4): wherein the various substituents of compounds (2), (3) and (4) are as defined herein.

Abstract: A solid-state image capturing device according to the present disclosure includes an image capturing element, a light transmitting member, a support member, a sealing resin member, and a wall member. The image capturing element is mounted on a substrate. The support member is arranged in a part of an outer-peripheral portion of the image capturing element, the outer-peripheral portion surrounding a light receiving unit of the image capturing element. The light transmitting member is supported by the support member. The sealing resin member is arranged in a peripheral portion of the image capturing element. The wall member is provided between the sealing resin member and a part of the outer-peripheral portion of the image capturing element, the part excluding a part in which the support member is arranged.

Abstract: A solid-state image capturing device (1) according to the present disclosure includes an image capturing element (3), a light transmitting member (8), a support member (7), a sealing resin member (6), and a wall member (9). The image capturing element (3) is mounted on a substrate (2). The support member (7) is arranged in a part of an outer-peripheral portion of the image capturing element (3), the outer-peripheral portion surrounding a light receiving unit of the image capturing element (3). The light transmitting member (8) is supported by the support member (7). The sealing resin member (6) is arranged in a peripheral portion of the image capturing element (3). The wall member (9) is provided between the sealing resin member (6) and a part of the outer-peripheral portion of the image capturing element (3), the part excluding a part in which the support member (7) is arranged.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: Disclosed is a solid-state imaging device including: a solid-state imaging element which outputs an image signal according to an amount of light sensed on a light sensing surface; a semiconductor element which performs signal processing with respect to the image signal output from the solid-state imaging element; and a substrate which is electrically connected to the solid-state imaging element and the semiconductor element, in which the semiconductor element is sealed by a molding resin in a state of being accommodated in an accommodation area which is provided on the substrate, and in which the solid-state imaging element is layered on the semiconductor element via the molding resin.

Abstract: In the production of methacrylic acid by the vapor phase catalytic oxidation of isobutylene, t-butanol, methacrolein isobutyl aldehyde or isobutyric acid, or mixture thereof, the reaction product gas is condensed by contact with an aqueous phase containing methacrylic acid and acetic acid thereby forming an aqueous solution of methacrylic acid and a gas phase containing methacrolein and methacrylic acid. The aqueous solution of methacrylic acid is extracted with a saturated hydrocarbon solvent containing from 6-9 carbon atoms. The methacrylic acid is extracted into the solvent phase and an aqueous phase containing acetic acid is also formed. Methacrolein is recovered from the gas containing methacrolein and methacrylic acid by contacting the gas with an aqueous phase containing methacrylic acid and acetic acid. An aqueous phase containing methacrylic acid, acetic acid and methacrolein is formed in the methacrolein recovery step.