Patents by Inventor YOSUKE TAKITA

YOSUKE TAKITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure
    Patent number: 11971633
    Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: April 30, 2024
    Assignees: SONY SEMICONDUCTOR SOLUTIONS CORPORATION, SONY GROUP CORPORATION
    Inventors: Takashi Sakairi, Tomoaki Honda, Tsuyoshi Okazaki, Keiichi Maeda, Chiho Araki, Katsunori Dai, Shunsuke Narui, Kunihiko Hikichi, Kouta Fukumoto, Toshiaki Okada, Takuma Matsuno, Yuu Kawaguchi, Yuuji Adachi, Koichi Amari, Hideki Kawaguchi, Seiya Haraguchi, Takayoshi Masaki, Takuya Fujino, Tadayuki Dofuku, Yosuke Takita, Kazuhiro Tamura, Atsushi Tanaka
  • ELECTRODE STRUCTURE, LIQUID CRYSTAL DISPLAY DEVICE, PROJECTIVE DISPLAY DEVICE, AND METHOD OF MANUFACTURING ELECTRODE STRUCTURE
    Publication number: 20220326578
    Abstract: An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.
    Type: Application
    Filed: May 15, 2020
    Publication date: October 13, 2022
    Inventors: TAKASHI SAKAIRI, TOMOAKI HONDA, TSUYOSHI OKAZAKI, KEIICHI MAEDA, CHIHO ARAKI, KATSUNORI DAI, SHUNSUKE NARUI, KUNIHIKO HIKICHI, KOUTA FUKUMOTO, TOSHIAKI OKADA, TAKUMA MATSUNO, YUU KAWAGUCHI, YUUJI ADACHI, KOICHI AMARI, HIDEKI KAWAGUCHI, SEIYA HARAGUCHI, TAKAYOSHI MASAKI, TAKUYA FUJINO, TADAYUKI DOFUKU, YOSUKE TAKITA, KAZUHIRO TAMURA, ATSUSHI TANAKA
  • Solid-state imaging device, method of manufacturing the same, and electronic apparatus
    Patent number: 10008529
    Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: June 26, 2018
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takashi Nakashikiryo, Yoshiaki Kitano, Yuuji Nishimura, Kouichi Itabasi, Ryou Chiba, Yosuke Takita, Mitsuru Ishikawa, Toyomi Jinwaki, Yuichi Seki, Masaya Shimoji, Yoichi Ootsuka, Takafumi Nishi
  • SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    Publication number: 20170278889
    Abstract: The present disclosure relates to a solid-state imaging device that enables diffusion of components in the interfaces between microlenses and an antireflection film, a method of manufacturing the solid-state imaging device, and an electronic apparatus. Moisture permeation holes are formed between the microlenses of adjacent pixels. The moisture permeation holes are covered with an antireflection film. The antireflection film is formed on the surfaces of the microlenses excluding the diffusion holes. The refractive index of the antireflection film is higher than the refractive index of the microlenses. The present disclosure can be applied to complementary metal oxide semiconductor (CMOS) image sensors that are back-illuminated solid-state imaging devices, for example.
    Type: Application
    Filed: September 17, 2015
    Publication date: September 28, 2017
    Inventors: TAKASHI NAKASHIKIRYO, YOSHIAKI KITANO, YUUJI NISHIMURA, KOUICHI ITABASI, RYOU CHIBA, YOSUKE TAKITA, MITSURU ISHIKAWA, TOYOMI JINWAKI, YUICHI SEKI, MASAYA SHIMOJI, YOICHI OOTSUKA, TAKAFUMI NISHI