Patents by Inventor You-Hsien Chang
You-Hsien Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901478Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: GrantFiled: December 27, 2021Date of Patent: February 13, 2024Assignee: EPISTAR CORPORATIONInventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
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Publication number: 20220123167Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: ApplicationFiled: December 27, 2021Publication date: April 21, 2022Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
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Patent number: 11211522Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.Type: GrantFiled: June 22, 2020Date of Patent: December 28, 2021Assignee: EPISTAR CORPORATIONInventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
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Publication number: 20200321487Abstract: A method of transferring semiconductor devices from a first substrate to a second substrate, including providing the semiconductor devices which are between the first substrate and the second substrate. The semiconductor devices include a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof. The first semiconductor device and the second semiconductor device are moved from the first substrate by a picking unit. The picking unit, the first semiconductor device, and the second semiconductor device are moved close to the second substrate. The picking unit has a space apart from the second substrate. The first semiconductor device and the second semiconductor device are transferred from the picking unit to the second substrate. The he first semiconductor device and the second semiconductor device on the second substrate have a second gap between thereof. The first gap and the second gap are different.Type: ApplicationFiled: June 22, 2020Publication date: October 8, 2020Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
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Patent number: 10693034Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: GrantFiled: August 22, 2017Date of Patent: June 23, 2020Assignee: EPISTAR CORPORATIONInventors: Hao-Min Ku, You-Hsien Chang, Shih-I Chen, Fu-Chun Tsai, Hsin-Chih Chiu
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Patent number: 10566498Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: GrantFiled: July 24, 2018Date of Patent: February 18, 2020Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
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Publication number: 20180374992Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: ApplicationFiled: July 24, 2018Publication date: December 27, 2018Inventors: Hsin-Chih CHIU, Shih-I CHEN, You-Hsien CHANG, Hao-Min KU, Ching-Yuan TSAI, Kuan-Chih KUO, Chih-Hung HSIAO, Rong-Ren LEE
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Patent number: 10038117Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: GrantFiled: September 8, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
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Publication number: 20180013037Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.Type: ApplicationFiled: September 8, 2017Publication date: January 11, 2018Inventors: Hsin-Chih CHIU, Shih-I CHEN, You-Hsien CHANG, Hao-Min KU, Ching-Yuan TSAI, Kuan-Chih KUO, Chih-Hung HSIAO, Rong-Ren LEE
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Publication number: 20170373219Abstract: A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof; separating the first semiconductor device and the second semiconductor device from the first substrate; sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof; wherein the first gap and the second gap are different.Type: ApplicationFiled: August 22, 2017Publication date: December 28, 2017Inventors: Hao-Min KU, You-Hsien CHANG, Shih-I CHEN, Fu-Chun TSAI, Hsin-Chih CHIU
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Patent number: 9793436Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.Type: GrantFiled: October 24, 2016Date of Patent: October 17, 2017Assignee: EPISTAR CORPORATIONInventors: Hsin-Chih Chiu, Shih-I Chen, You-Hsien Chang, Hao-Min Ku, Ching-Yuan Tsai, Kuan-Chih Kuo, Chih-Hung Hsiao, Rong-Ren Lee
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Publication number: 20170040492Abstract: A semiconductor light-emitting device comprises an epitaxial structure for emitting a light and comprises an edge, a first portion and a second portion surrounding the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion, a main light-extraction surface on the epitaxial structure and comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion and an edge, wherein the second portion is between the edge and the first portion.Type: ApplicationFiled: October 24, 2016Publication date: February 9, 2017Inventors: Hsin-Chih CHIU, Shih-I CHEN, You-Hsien CHANG, Hao-Min KU, Ching-Yuan TSAI, Kuan-Chih KUO, Chih-Hung HSIAO, Rong-Ren LEE
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Publication number: 20100044743Abstract: A flip chip light emitting diode with an epitaxial strengthening layer and a manufacturing method thereof are revealed. The flip chip light emitting diode with an epitaxial strengthening layer includes an epitaxial structure connected with an epitaxial strengthening layer while the manufacturing method of the flip chip light emitting diode with an epitaxial strengthening layer is mainly to form an epitaxial strengthening layer on the epitaxial structure. Thus the epitaxial structure of the flip chip light emitting diode is strengthened so as to prevent breakage of the epitaxial structure while removing a substrate by laser assisted lift-off technique or other techniques. Moreover, the thermal expansion coefficient of the epitaxial strengthening layer matches well with thermal expansion coefficient of the epitaxial structure. Thus after being treated with cyclic heating, there is no stress caused by unmatched thermal expansion coefficient.Type: ApplicationFiled: February 20, 2009Publication date: February 25, 2010Inventors: Cheng-Yi LIU, You-Hsien Chang, Shiaw-Tseh Chiang