Patents by Inventor You-Kyoung Lee
You-Kyoung Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7833855Abstract: In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electrode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.Type: GrantFiled: June 26, 2006Date of Patent: November 16, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Bom Kang, Kyung-In Choi, You-Kyoung Lee, Seong-Geon Park, Gil-Heyun Choi, Jong-Myeong Lee, Sang-Woo Lee
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Patent number: 7452811Abstract: In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1-C6 alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.Type: GrantFiled: June 22, 2006Date of Patent: November 18, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-In Choi, Sang-Bom Kang, Seong-Geon Park, You-Kyoung Lee, Gil-Heyun Choi, Jong-Myeong Lee, Sang-Woo Lee
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Patent number: 7425479Abstract: The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.Type: GrantFiled: July 12, 2007Date of Patent: September 16, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Soo-Im Jeong, You-Kyoung Lee, Jin-Ho Ju
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Patent number: 7378230Abstract: The present invention relates to a photoresist composition for an MMN (multi-micro nozzle) head coater, more particularly to a photoresist composition comprising a novolak resin with a molecular weight ranging from 2000 to 12,000, a diazide photoactive compound, an organic solvent, and a Si-based surfactant for use in liquid crystal display circuits. The photoresist composition for liquid crystal display circuits of the present invention solves the stain problem, which occurs in MMN head coaters used for large-scale substrate glass, and improves coating characteristics, so that it can be utilized industrially and is expected to significantly improve productivity.Type: GrantFiled: January 5, 2004Date of Patent: May 27, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Chul Kang, Jin-Ho Ju, You-Kyoung Lee, Dong-Ki Lee, Hyo-Youl Kim, Hoon Kang, Seung-Uk Lee, Byung-Uk Kim
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Publication number: 20080044961Abstract: The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.Type: ApplicationFiled: July 12, 2007Publication date: February 21, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Soo-Im JEONG, You-Kyoung LEE, Jin-Ho JU
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Patent number: 7144662Abstract: The present invention relates to a photoresist composition having high heat resistance used in the production process of an LCD, and more particularly, to a photoresist composition having high heat resistance, capable of decreasing process tact (a way), of process simplification, and of the retrenchment of expenditures. The inventive composition facilitates this through making it possible to skip 5 processes, such as Cr metal deposition forming a metal film, and the photo/etch/PR strip/etch steps of the whole surface of the metal, by substituting the inventive composition for the usual metal film, such that N+ ion doping in production of TFT-LCD can take place due its high heat resistance.Type: GrantFiled: February 20, 2002Date of Patent: December 5, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Ki Lee, Sung-Chul Kang, You-Kyoung Lee, Jin-Ho Ju
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Publication number: 20060251812Abstract: Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR1)(NR2R3)3, wherein R1, R2 and R3 are each independently H or a C1-C6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.Type: ApplicationFiled: July 19, 2006Publication date: November 9, 2006Inventors: Sang-Bom Kang, Byung-Hee Kim, Kyung-In Choi, Gil-Heyun Choi, You-Kyoung Lee, Seong-Geon Park
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Publication number: 20060240665Abstract: In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.Type: ApplicationFiled: June 26, 2006Publication date: October 26, 2006Inventors: Sang-Bom Kang, Kyung-In Choi, You-Kyoung Lee, Seong-Geon Park, Gil-Heyun Choi, Jong-Myeong Lee, Sang-Woo Lee
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Publication number: 20060234494Abstract: In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1-C6 alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.Type: ApplicationFiled: June 22, 2006Publication date: October 19, 2006Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung-In CHOI, Sang-Bom KANG, Seong-Geon PARK, You-Kyoung LEE, Gil-Heyun CHOI, Jong-Myeong LEE, Sang-Woo LEE
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Patent number: 7105444Abstract: In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1–C6 alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.Type: GrantFiled: May 28, 2004Date of Patent: September 12, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung-In Choi, Sang-Bom Kang, Seong-Geon Park, You-Kyoung Lee, Gil-Heyun Choi, Jong-Myeong Lee, Sang-Woo Lee
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Patent number: 7098131Abstract: Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR1)(NR2R3)3, wherein R1, R2 and R3 are each independently H or a C1–C6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.Type: GrantFiled: May 28, 2004Date of Patent: August 29, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Bom Kang, Byung-Hee Kim, Kyung-In Choi, Gil-Heyun Choi, You-Kyoung Lee, Seong-Geon Park
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Patent number: 7081409Abstract: In a method for forming a gate electrode, a dielectric layer having a high dielectric constant is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1–C6 alkyl group are introduced onto the dielectric layer to form a tantalum nitride layer. A capacitor metal layer or a gate metal layer is formed on the tantalum nitride layer. The capacitor metal layer or the gate metal layer and the tantalum nitride layer are patterned to form a capacitor electrode or a gate electrode. The tantalum amine derivatives are used in forming a dual gate electrode.Type: GrantFiled: June 25, 2004Date of Patent: July 25, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Bom Kang, Jong-Myeong Lee, Kyung-In Choi, Gil-Heyun Choi, You-Kyoung Lee, Seong-Geon Park, Sang-Woo Lee
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Patent number: 7056776Abstract: A semiconductor device has at least two different gate electrodes. The two different gate electrodes include a first gate electrode on a first gate insulation layer. The first gate electrode includes a first metal-containing conductive pattern on the first gate insulation layer and a second metal-containing conductive pattern. A second gate electrode is provided on a second gate insulation layer and includes a third metal-containing conductive material on the second gate insulation layer. The first metal-containing conductive pattern and the third metal-containing conductive pattern have different work functions from each other. A surface of the second metal-containing conductive pattern and a surface of the third metal-containing conductive pattern are substantially planar. Methods of fabrication such semiconductor devices are also provided.Type: GrantFiled: September 14, 2004Date of Patent: June 6, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Seong-Geon Park, Gil-Heyun Choi, Sang-Bom Kang, You-Kyoung Lee
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Publication number: 20050127366Abstract: The present invention provides a thin film transistor array panel comprising: an insulating substrate; a first signal line formed on the insulating substrate and extending in a first direction; a second signal line formed on the insulating substrate, extending in a second direction, and intersecting the first signal line; a thin film transistor connected to the first and second signal lines; a passivation layer formed on the second signal line and having a contact hole exposing a portion of the second signal line; and a pixel electrode formed on the passivation layer and connected to the thin film transistor through the contact hole, wherein the passivation layer is formed by coating an organic solution that includes an organic insulating material and a solvent including at least one of PGMEP, EEP, and nBA.Type: ApplicationFiled: November 17, 2004Publication date: June 16, 2005Inventors: Soo-Im Jeong, You-Kyoung Lee, Jin-Ho Ju
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Patent number: 6893791Abstract: Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.Type: GrantFiled: September 27, 2002Date of Patent: May 17, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: You-Kyoung Lee, Sung-Chul Kang, Jin-Ho Ju, Dong-Ki Lee, Seung-Uk Lee, Hoon Kang
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Publication number: 20050064653Abstract: A semiconductor device has at least two different gate electrodes. The two different gate electrodes include a first gate electrode on a first gate insulation layer. The first gate electrode includes a first metal-containing conductive pattern on the first gate insulation layer and a second metal-containing conductive pattern. A second gate electrode is provided on a second gate insulation layer and includes a third metal-containing conductive material on the second gate insulation layer. The first metal-containing conductive pattern and the third metal-containing conductive pattern have different work functions from each other. A surface of the second metal-containing conductive pattern and a surface of the third metal-containing conductive pattern are substantially planar. Methods of fabrication such semiconductor devices are also provided.Type: ApplicationFiled: September 14, 2004Publication date: March 24, 2005Inventors: Seong-Geon Park, Gil-Heyun Choi, Sang-Bom Kang, You-Kyoung Lee
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Publication number: 20050059240Abstract: In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1-C6 alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.Type: ApplicationFiled: May 28, 2004Publication date: March 17, 2005Inventors: Kyung-In Choi, Sang-Bom Kang, Seong-Geon Park, You-Kyoung Lee, Gil-Heyun Choi, Jong-Myeong Lee, Sang-Woo Lee
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Publication number: 20040253541Abstract: The present invention relates to a photoresist composition having high heat resistance used in the production process of an LCD, and more particularly, to a photoresist composition having high heat resistance, capable of decreasing process tact (a way), of process simplification, and of the retrenchment of expenditures. The inventive composition facilitates this through making it possible to skip 5 processes, such as Cr metal deposition forming a metal film, and the photo/etch/PR strip/etch steps of the whole surface of the metal, by substituting the inventive composition for the usual metal film, such that N+ ion doping in production of a TFT-LCD can take place due its high heat resistance.Type: ApplicationFiled: April 19, 2004Publication date: December 16, 2004Inventors: Dong-Ki Lee, Sung-Chul Kang, You-Kyoung Lee, Jin-Ho Ju
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Publication number: 20040235285Abstract: In a method for forming a gate electrode, a dielectric layer having a high dielectric constant is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1-C6 alkyl group are introduced onto the dielectric layer to form a tantalum nitride layer. A capacitor metal layer or a gate metal layer is formed on the tantalum nitride layer. The capacitor metal layer or the gate metal layer and the tantalum nitride layer are patterned to form a capacitor electrode or a gate electrode. The tantalum amine derivatives are used in forming a dual gate electrode.Type: ApplicationFiled: June 25, 2004Publication date: November 25, 2004Inventors: Sang-Bom Kang, Jong-Myeong Lee, Kyung-In Choi, Gil-Heyun Choi, You-Kyoung Lee, Seong-Geon Park, Sang-Woo Lee
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Publication number: 20040219784Abstract: Atomic layers can be formed by introducing a tantalum amine derivative reactant onto a substrate, wherein the tantalum amine derivative has a formula: Ta(NR1)(NR2R3)3, wherein R1, R2 and R3 are each independently H or a C1-C6 alkyl functional group, chemisorbing a portion of the reactant on the substrate, removing non-chemisorbed reactant from the substrate and introducing a reacting gas onto the substrate to form a solid material on the substrate. Thin films comprising tantalum nitride (TaN) are also provided.Type: ApplicationFiled: May 28, 2004Publication date: November 4, 2004Inventors: Sang-Bom Kang, Byung-Hee Kim, Kyung-In Choi, Gil-Heyun Choi, You-Kyoung Lee, Seong-Geon Park