Abstract: A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.

Abstract: A method of fabricating a pixel electrode of a liquid crystal display uses an etchant that has low damage to metals to thereby enhance yields. In the method, a protective film covers a switching device, and a contact hole is defined at the protective film in such a manner to expose one electrode of the switching device. The pixel electrode, connected via the contact hole to the one electrode of the switching device, is formed on the protective film by using a low-temperature process in which a Hydrogen-containing gas is injected within a vacuum chamber. Accordingly, the etching process time can be shortened and damage to the metal can be virtually eliminated.

Abstract: A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.

Abstract: A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.

Abstract: An etchant for patterning indium tin oxide, wherein the etchant is a mixed solution of HCl, CH3COOH, and water, and a method of fabricating a liquid crystal display device are disclosed in the present invention. The method includes forming a gate electrode on a substrate, forming a gate insulating layer and an amorphous silicon layer on the gate electrode including the substrate, forming an active area by patterning the amorphous silicon layer, forming a source electrode and a drain electrode on the active area, forming a passivation layer on the source electrode and the drain electrode and the gate insulating layer, forming a contact hole exposing a part of the drain electrode, forming an indium tin oxide layer on the passivation layer, and forming an indium tin oxide electrode by selectively etching the indium tin oxide layer using a mixed solution of HCl, CH3COOH, and water as an etchant.

Abstract: An etchant for patterning indium tin oxide, wherein the etchant is a mixed solution of HCl, CH3COOH, and water, and a method of fabricating a liquid crystal display device are disclosed in the present invention. The method includes forming a gate electrode on a substrate, forming a gate insulating layer and an amorphous silicon layer on the gate electrode including the substrate, forming an active area by patterning the amorphous silicon layer, forming a source electrode and a drain electrode on the active area, forming a passivation layer on the source electrode and the drain electrode and the gate insulating layer, forming a contact hole exposing a part of the drain electrode, forming an indium tin oxide layer on the passivation layer, and forming an indium tin oxide electrode by selectively etching the indium tin oxide layer using a mixed solution of HCl, CH3COOH, and water as an etchant.

Abstract: A method of fabricating a pixel electrode of a liquid crystal display uses an etchant that has low damage to metals to thereby enhance yields. In the method, a protective film covers a switching device, and a contact hole is defined at the protective film in such a manner to expose one electrode of the switching device. The pixel electrode, connected via the contact hole to the one electrode of the switching device, is formed on the protective film by using a low-temperature process in which a Hydrogen-containing gas is injected within a vacuum chamber. Accordingly, the etching process time can be shortened and damage to the metal can be virtually eliminated.

Abstract: A pixel electrode employs a transparent electrode made from indium-zinc-oxide (IZO) that is capable of preventing damage and bending thereof. In a liquid crystal display device containing pixel electrodes, the transparent electrode is made from indium-zinc-oxide (IZO) having an amorphous structure so that it can be etched within a short period of time with a low concentration of etchant. Accordingly, it is possible to prevent damage and bending of the transparent electrode upon the patterning thereof.