Abstract: In a method of forming pattern, a target layer is formed on a semiconductor substrate, and pluralities of first spacers having cylindrical shapes protruding from the target layer are formed. A second spacer layer is formed to cover the first spacers, provide interstitial spaces between the first spacers, and provide second inner spaces within first inner spaces of the first spacers, respectively. The second spacer layer is etched to form first opening portions in which the second inner spaces and the interstitial spaces extend into the target layer.

Abstract: In a method of forming pattern, a target layer is formed on a semiconductor substrate, and pluralities of first spacers having cylindrical shapes protruding from the target layer are formed. A second spacer layer is formed to cover the first spacers, provide interstitial spaces between the first spacers, and provide second inner spaces within first inner spaces of the first spacers, respectively. The second spacer layer is etched to form first opening portions in which the second inner spaces and the interstitial spaces extend into the target layer.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 65%, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system and used for creating high value-added business in the food and agriculture industry.

Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.

Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 65%, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system.

Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 650, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system.

Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 650, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system and used for creating high value-added business in the food and agriculture industry.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming first spacers covering both sidewalls of each of the first trenches, forming a plurality of second trenches by etching a bottom of each of the first trenches, forming second spacers covering both sidewalls of each of the second trenches, forming a plurality of third trenches by etching a bottom of each of the second trenches, forming an insulation layer covering exposed surfaces of the plurality of the substrate, and forming a contact which exposes one sidewall of each of the second trenches by selectively removing the second spacers.

Abstract: Provided are magnetic core-ceramic shell (e.g., magnetite (Fe3O4) core-calcium phosphate (Ca3(PO4)2) shell) nanocrystals with high crystallization degree, uniform size, and high chemical stability and a method for synthesizing the same. A core-shell structure is synthesized in a process of forming magnetite seeds corresponding to cores by the reduction of magnetite precursors and then, sequentially, coating the magnetite with Ca3(PO4)2 by the reduction of Ca3(PO4)2 precursors.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.