Patents by Inventor You Zhai
You Zhai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240155939Abstract: A compound is provided as having a structure of Formula I: where X1 and X2 are each independently a nitrogen atom or a C—R group, C is a carbon atom, R is a hydrogen atom, a deuterium atom, a halogen atom, or a cyano group, CR, and at least one of X1 and X2 is N; L1, L2, and L3 are each independently a single bond, a substituted or unsubstituted aryl group, or substituted or unsubstituted aryl heteroaryl group; and Ar1, Ar2 are each independently a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group.Type: ApplicationFiled: December 16, 2022Publication date: May 9, 2024Inventors: Wen Peng DAI, Wei GAO, Lu ZHAI, Tingting LU, You GAO
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Publication number: 20240052014Abstract: The present disclosure relates to a truncated body of IL7R?. The amino acid sequence of the truncated body of IL7R? s a sequence shown in SEQ ID NO. 1. A T cell expressing a chimeric antigen receptor containing the truncated body of IL7R? can effectively kill a tumor cell.Type: ApplicationFiled: July 30, 2021Publication date: February 15, 2024Applicant: Beijing Neurosurgical InstituteInventors: Wei ZHANG, Tao JIANG, You ZHAI, Guanzhang LI
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Publication number: 20230322940Abstract: The disclosure relates to an anti-CD44 single-chain antibody and use thereof in preparing a drug for treating a tumor. The amino acid sequence of the anti-CD44 single-chain antibody includes a sequence shown in SEQ ID NO. 1. T lymphocytes expressing the anti-CD44 single-chain antibody provided in the present disclosure can specifically kill CD44-positive tumor cells and have high specificity as well as strong killing ability.Type: ApplicationFiled: July 30, 2021Publication date: October 12, 2023Applicant: Beijing Neurosurgical InstituteInventors: Wei ZHANG, Tao JIANG, You ZHAI, Guanzhang LI
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Publication number: 20230310603Abstract: The disclosure relates to an anti-CD133 single-chain antibody. The amino acid sequence of the anti-CD133 single-chain antibody comprises a sequence shown in SEQ ID NO. 1. T lymphocytes expressing the anti-CD133 single-chain antibody can specifically kill CD133-positive tumor cells and have higher specificity and stronger killing ability.Type: ApplicationFiled: July 30, 2021Publication date: October 5, 2023Applicant: Beijing Neurosurgical InstituteInventors: Wei ZHANG, Tao JIANG, You ZHAI, Guanzhang LI
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Publication number: 20230295294Abstract: The disclosure relates to an anti-TIM3 single-chain antibody. The amino acid sequence of the anti-TIM3 single-chain antibody is a sequence shown in SEQ ID NO. 1. T lymphocytes expressing the anti-TIM3 single-chain antibody can effectively kill tumor cells.Type: ApplicationFiled: July 30, 2021Publication date: September 21, 2023Applicant: Beijing Neurosurgical InstituteInventors: Wei ZHANG, Tao JIANG, You ZHAI, Guanzhang LI
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Patent number: 11255017Abstract: A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.Type: GrantFiled: June 28, 2019Date of Patent: February 22, 2022Assignee: LAM RESEARCH CORPORATIONInventors: Jun Qian, Purushottam Kumar, Adrien Lavoie, You Zhai, Jeremiah Baldwin, Sung Je Kim
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Publication number: 20200407849Abstract: A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.Type: ApplicationFiled: June 28, 2019Publication date: December 31, 2020Inventors: Jun QIAN, Purushottam KUMAR, Adrien LAVOIE, You ZHAI, Jeremiah BALDWIN, Sung Je KIM
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Patent number: 10510924Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.Type: GrantFiled: January 16, 2015Date of Patent: December 17, 2019Assignees: The Board of Trustees of the University of Illinois, Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLCInventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, III, Kishori Deshpande, Jake Joo
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Patent number: 10351953Abstract: A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.Type: GrantFiled: March 16, 2017Date of Patent: July 16, 2019Assignee: LAM RESEARCH CORPORATIONInventors: Jun Qian, Purushottam Kumar, Adrien LaVoie, You Zhai, Jeremiah Baldwin, Sung Je Kim
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Publication number: 20180273844Abstract: Methods and systems for producing nanostructure materials are provided. In one aspect, a process is provided that comprises a) heating one or more nanostructure material reagents by 100° C. or more within 5 seconds or less; and b) reacting the nanostructure material reagents to form a nanostructure material reaction product. In a further aspect, a process is provided comprising a) flowing a fluid composition comprising one or more nanostructure material reagents through a reactor system; and b) reacting the nanostructure material reagents to form a nanostructure material reaction product comprising Cd, In or Zn. In a yet further aspect, methods are provided that include flowing one or more nanostructure material reagents through a first reaction unit; cooling the one or more nanostructure material reagents or reaction product thereof that have flowed through the first reaction unit; and flowing the cooled one or more nanostructure material reagents or reaction product thereof through a second reaction unit.Type: ApplicationFiled: February 13, 2016Publication date: September 27, 2018Inventors: Kishori Deshpande, Peter Trefonas, III, Jieqian Zhang, Vivek Kumar, Nuri Oh, Andy You Zhai, Paul Kenis, Moonsub Shim
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Publication number: 20180265983Abstract: A method for delivering vaporized precursor in a substrate processing system using a vapor delivery system includes (a) selectively supplying push gas to an inlet of an ampoule storing liquid and vaporized precursor during a deposition period of a substrate; (b) measuring a pressure of the push gas and the vaporized precursor at an outlet of the ampoule during the deposition period; (c) determining a maximum pressure during the deposition period; (d) determining an integrated area for the deposition period based on a sampling interval and the maximum pressure during the sampling interval; and (e) repeating (a), (b), (c) and (d) for a plurality of the deposition periods for the substrate.Type: ApplicationFiled: March 16, 2017Publication date: September 20, 2018Inventors: Jun Qian, Purushottam Kumar, Adrien LaVoie, You Zhai, Jeremiah Baldwin, Sung Je Kim
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Publication number: 20160365478Abstract: In one aspect, methods are provided for fabrication of multiple layers of a nanostructure material composite, and devices produced by such methods. In another aspect, methods are provided that include use of an overcoating fluoro-containing layer that can facilitate transfer of a nanostructure material layer, and devices produced by such methods.Type: ApplicationFiled: December 19, 2014Publication date: December 15, 2016Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, John A. Rogers, Bong Hoon Kim, Sang Y. Yang, Peter Trefonas, III, Kishori Deshpande, Jaebum Joo, Jieqian J. Zhang, Jong Keun Park
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Publication number: 20160225946Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.Type: ApplicationFiled: August 31, 2015Publication date: August 4, 2016Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, III, Kishori Deshpande, Jake Joo
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Publication number: 20150364645Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.Type: ApplicationFiled: January 16, 2015Publication date: December 17, 2015Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
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Patent number: 9123638Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.Type: GrantFiled: March 15, 2013Date of Patent: September 1, 2015Assignees: Rohm and Haas Electronic Materials, LLC, The University of Illinois, The Office of Technology Management, Dow Global Technologies LLCInventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
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Publication number: 20150243837Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; a first endcap contacting one of the first end or the second end; where the first endcap comprises a first semiconductor and where the first endcap extends from the one-dimensional nanoparticle to form a first nanocrystal heterojunction; and a second endcap that contacts the first endcap; where the second endcap comprises a second semiconductor and where the second endcap extends from the first endcap to form a second nanocrystal heterojunction; and where the first semiconductor is different from the second semiconductor.Type: ApplicationFiled: March 15, 2013Publication date: August 27, 2015Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
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Patent number: 8937294Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.Type: GrantFiled: March 15, 2013Date of Patent: January 20, 2015Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
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Publication number: 20140264259Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo
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Publication number: 20140264258Abstract: Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.Type: ApplicationFiled: March 15, 2013Publication date: September 18, 2014Inventors: Moonsub Shim, Nuri Oh, You Zhai, Sooji Nam, Peter Trefonas, Kishori Deshpande, Jake Joo