Abstract: A steam generation device is placed at a lower portion of a side wall of a heating chamber. A steam jet-out part is placed upper than the steam generation device of the side wall of the heating chamber with a distance from the steam generation device. Thus, even if bumping has occurred within a water storage part of the steam generation device, causing boiling water to rush out from a steam supply port into a steam supply pipe, the boiling water is prevented from intruding into a steam jet-out part.

Abstract: A steam generation device is placed at a lower portion of a side wall of a heating chamber. A steam jet-out part is placed upper than the steam generation device of the side wall of the heating chamber with a distance from the steam generation device. Thus, even if bumping has occurred within a water storage part of the steam generation device, causing boiling water to rush out from a steam supply port into a steam supply pipe, the boiling water is prevented from intruding into a steam jet-out part.

Abstract: First, oxygen ions of a high concentration are implanted into a silicon substrate 1, by which a high-concentration oxygen implanted layer 3 is formed. Subsequently, a heat treatment for about 4 hours at 1350.degree. C. is carried out in an atmosphere of Ar with a 0.5% concentration oxygen for the formation of a buried oxide layer 5. Next, pulse laser annealing is performed for melting and recrystallization of the surface silicon layer. Pulsed laser beam is radiated at an energy density of 1200 mJ/cm.sup.2 or more. The pulsed laser beam is able to melt the semiconductor surface in several 10's nsec by virtue of its extremely large power density in irradiation of 10.sup.7 W/cm.sup.2. By iterating this pulse laser annealing, the surface silicon layer iterates to melt and recrystallize, activating the activities of crystal defects, by which damage recovery based on crystal seeds is accomplished.