Abstract: A solar cell module includes: a first optical system which concentrates sunlight; a power generation element which performs photoelectric conversion; a glass plate which supports the power generation element; and a second optical system which is on a light-exiting side of the first optical system and supports the glass plate. The second optical system includes a positioning portion, and a second lens on the first optical system side, and the glass plate is disposed at the positioning portion to position the power generation element at a focal point of the second lens.

Abstract: A solar cell module includes: a first optical system which concentrates sunlight; a power generation element which performs photoelectric conversion; a glass plate which supports the power generation element; and a second optical system which is on a light-exiting side of the first optical system and supports the glass plate. The second optical system includes a positioning portion, and a second lens on the first optical system side, and the glass plate is disposed at the positioning portion to position the power generation element at a focal point of the second lens.

Abstract: An upper electrode 20 according to one embodiment of the present invention includes: a counter portion 22 having a counter face 22A facing a placing face 10A; a periphery portion 24 having a flat face 24A connecting to a periphery of the counter face 22A; and multiple convex portions 26 formed on the counter face 22A. On a projection plane substantially parallel to the placing face 10A, the periphery of the counter portion 22 overlaps the periphery of the lower electrode 10, and a periphery of the periphery portion 24 surrounds a periphery of the counter portion 22.

Abstract: Provided is a semiconductor device manufacturing method by which plasma processing can be performed uniformly on a substrate. A plasma processing apparatus according to one embodiment of the present invention includes an auxiliary electrode provided annularly along a periphery of the lower electrode on a lateral side of the lower electrode. When plasma processing is performed on a substrate S, a potential of the lower electrode is set lower than the potential of the upper electrode while a potential of the auxiliary electrode is set lower than a potential of the upper electrode.